材料期刊网

掺杂Dy~(3+)对SrTiO_3晶界层电容器组织性能的影响

陈显明 , 黄勇

兵器材料科学与工程 doi:10.3969/j.issn.1004-244X.2009.04.013

研究掺杂Dy~(3+)对SrTiO_3晶界层电容器组织性能的影响.Dy~(3+)的加入,在含量较低时可以降低晶粒的界面能,从而可以促进晶粒的长大;而在含量较高时,会引起较高的形变能,为降低形变能,Dy~(3+)易于在晶界上析出第二相质点,这些第二相质点具有细化晶粒的作用.晶界层电容器的有效相对介电常数是由晶粒的大小、晶界层的介电常数和晶界层厚度所决定的.因此,瓷料的配方和制造工艺必须保证晶粒的生长和形成致密均匀的晶界,才有良好的性能.通过配方的调整,瓷片获得了良好的组织与综合性能:ε=68 000,tgδ=1.86×10~(-2),ρ_(50v)=20 GΩ·cm,V_(B (DC))=620 V·mm~(-1),|ΔC·C~(-1)(-25～125℃)|=7.4%.

关键词: SrTiO_3 , 晶界层电容器 , 组织性能 , Dy , 陶瓷

(SrZrO_3)_(10)(SrTiO_3)_(90)缓冲层对PZT结晶及性能的影响

辛红 , 苏未安 , 王艳阳

硅酸盐通报

_采用Sol-gel法制备了PbZr_0.52Ti_0.48O_3 (PZT)薄膜,并研究了(SrZrO_3)_(10)(SrTiO_3)_(90)((SZO)_10(STO)_90)缓冲层对PZT薄膜结晶和性能的影响.X射线衍射(XRD)结果表明:(SZO)_10(STO)_90缓冲层对PZT薄膜结晶有取向诱导作用,由(SZO)_10(STO)_90诱导的PZT薄膜有很强的(111)择优取向,缓冲层将PZT薄膜的取向度α由45.0%提高到了90.1%以上;PZT的(111)择优取向提高了薄膜的电性能,使剩余极化强度Pr从26.8 μC/cm~2增大到38.8 μC/cm~2.

关键词: 缓冲层 , 薄膜 , 结晶 , (SZO)_10(STO)_90

Bi_(0.8)La_(0.2)FeO_3/La_(0.7)Sr_(0.3)MnO_3/SrTiO_3纳米晶多铁薄膜的制备

李享成 , 陆培祥 , 杨光 , 姚凯伦 , 朱伯铨

兵器材料科学与工程 doi:10.3969/j.issn.1004-244X.2009.06.002

以SrTiO_3(STO)为基片,以La_(0.7)Sr_(0.3)MnO_3(LSMO)为缓冲层,采用脉冲激光沉积法制备了Bi_(0.8)La_(0.2)FeO_3(BLFO)/LSMO/STO多铁薄膜.通过生长条件控制,得到单相的BLFO薄膜,且沿(100)面生长,晶粒尺寸为40 nm,厚度为223 nm.BLFO/LSMO/STO纳米晶薄膜的最大电极化为25 μC/cm~2,饱和磁化强度为30 kA/m.具有多铁性能.

关键词: 多铁薄膜 , Bi_(0.8)La_(0.2)FeO_3 , LSMO

微弧氧化工艺参数对BaTiO_3和SrTiO_3薄膜生长的影响

王敏 , 郭会勇 , 黄文波 , 李文芳

材料热处理学报

将工业纯Ti板（99.5%）分别置于Ba（OH）2、Sr（OH）2＋NaOH溶液中微弧氧化制备BaTiO3和SrTiO3陶瓷薄膜。XRD分析表明：所制备的薄膜分别主要由四方相BaTiO3和立方相SrTiO3组成。测得最优工艺条件下所得两种薄膜在100 Hz下的介电常数分别为152.3和419.1,介质损耗（tanδ）值分别为0.096和0.045。重点研究了微弧氧化工艺参数对薄膜生长的影响规律,结果表明：随着电解液溶度、电流密度的增加以及电流频率的降低,薄膜的生长速度加快;提出并验证了薄膜生长动力学的经验公式。

关键词: 微弧氧化 , 钛酸钡 , 钛酸锶 , 介电性能

乙二醇溶剂热合成自组装SrTiO_3片状纳米结构及其光催化性能

张严芳 , 徐刚 , 魏晓 , 任召辉 , 沈鸽 , 郑伟 , 韩高荣

功能材料

以钛酸四正丁酯（（C4H9O）4Ti）水解沉淀的钛羟基氧化物和硝酸锶（Sr（NO3）2）为反应原料,以氢氧化钾（KOH）为矿化剂,以乙二醇（（HOCH2）2）为溶剂,经200℃溶剂热反应得到了由纳米颗粒自组装形成的SrTiO3片状纳米结构。分别用XRD、SEM、TEM表征SrTiO3粉体的物相结构和微观形貌。通过光催化降解罗丹明B（RhB）对比研究了乙二醇溶剂热合成的纳米颗粒自组装SrTiO3片状纳米结构和水热合成的SrTiO3粉体的光催化性能,结果表明,乙二醇溶剂热合成的SrTiO3自组装片状纳米结构具有更加优异的光催化性能。

关键词: SrTiO3 , 溶剂热 , 乙二醇 , 自组装 , 光催化

Formation and Annealing of BaTiO_3 and SrTiO_3 Nanoparticles in KOH Solution

材料科学技术（英文）

关键词:

Photoluminescence of nitrogen doped SrTiO(3)

Journal of Physics D-Applied Physics

Nitrogen doped SrTiO(3) (N-STO) was fabricated by the ion implantation technique. The microstructure and photoluminescence (PL) of virgin N-STO and HF acid etched N-STO were studied in detail. X- ray diffraction measurements indicate that the nitrogen dopants can enhance the crystal structure of STO, and that there are no other impurity phases in N-STO except that of cubic STO. However, there is nano-crystal phase of Sr(2)Ti(6)O(13) in the HF-acid-etched STO and N-STO. The room temperature PL intensity of the original STO crystal is quenched by nitrogen dopants, which might be related to the absence of trapped holes and electrons due to the enhanced crystal structure. In contrast, the room temperature PL intensity is greatly increased by HF acid etching for both STO crystal and N-STO. This increase in PL intensity may be related to the order -disorder effect and the stabilization of self-trapped excitons at room temperature due to the nano-crystal phase of Sr(2)Ti(6)O(13).

关键词: photocatalytic activity;luminescence;emission;green

SrTiO3光催化材料的研究进展

贾德伟 , 卢艳丽 , 胡婷婷

材料导报

简要介绍了近十几年SrTiO3作为光催化材料在制备技术和光催化性能改性方面的进展,并对其未来发展动向进行了简要分析.概述了不同改性方式提高SrTiO3光催化活性的机理,列举了部分SrTiO3光催化材料改性成果和计算学理论工作对提高SrTiO光催化活性的机理的分析解释,指出随着SrTiO3光催化材料改性体系的完善,不断引进新的实验处理手段结合复合改性方式是SrTiO3光催化材料改性的发展方向,且计算材料学将为其提供有力指导.

关键词: SrTiO3 , 半导体光催化材料 , 改性

SrTiO3薄膜制备技术研究进展

刘剑 , 郝斌 , 董秀珍 , 李悦 , 王伟志

硅酸盐通报

拥有众多优良性能的SrTiO3薄膜已经受到了人们的广泛关注.本文首先对SrTiO3薄膜的性质和应用进行了简单介绍,然后从物理和化学两大类方法着重对其现有制备技术及研究进展进行了全面的综述,文章最后对SrTiO3薄膜的制备及器件研究领域进行了展望.

关键词: SrTiO3薄膜 , 制备 , 进展

Electronic structure and optical properties of In doped SrTiO(3)/MgO(001)

Journal of Alloys and Compounds

The electronic and optical properties of six possible In doped SrTiO(3)/MgO(001) interface models have been studied by using first-principles method based on the density functional theory. From the analysis of the substitution energy, the segregation energy and density of states, it reveals that an In atom would preferably substituted for the Ti atom at the interface. The effects of In doping oil the SrTiO(3)/MgO(001) film are discussed in detail by the position optimization of In atoms. The electronic structure and optical properties of In doped SrTiO(3)/MgO(001) are dependent on the concentration of In atoms and the relative positions of the In atoms to the interface. (C) 2009 Elsevier B.V. All rights reserved.

关键词: Density functional theory;Electronic structure;Optical properties;Interface structure;srtio3 thin-films;single-crystal;mgo;stability;constants;systems;oxides;bulk;gas;cao