_采用Sol-gel法制备了PbZr_0.52Ti_0.48O_3 (PZT)薄膜,并研究了(SrZrO_3)_(10)(SrTiO_3)_(90)((SZO)_10(STO)_90)缓冲层对PZT薄膜结晶和性能的影响.X射线衍射(XRD)结果表明:(SZO)_10(STO)_90缓冲层对PZT薄膜结晶有取向诱导作用,由(SZO)_10(STO)_90诱导的PZT薄膜有很强的(111)择优取向,缓冲层将PZT薄膜的取向度α由45.0%提高到了90.1%以上;PZT的(111)择优取向提高了薄膜的电性能,使剩余极化强度Pr从26.8 μC/cm~2增大到38.8 μC/cm~2.
PbZr_0.52Ti_0.48O_3 (PZT) thin films were prepared by a Sol-gel method with (SZO)_(10)(STO)_(90) buffer layer. The effect of (SZO)_(10)(STO)_(90) buffer layer on the crystallization and ferroelectric properties of PZT thin films was investigated. X-ray diffraction patterns show that the crystallization of PZT thin films varies with buffer layer clearly. (SZO)_(10)(STO)_(90) seeding layer almost results in the formation of a single (111)-textured PZT film, and (111)-orientation degree increases from 45.0% to more then 90.1%. At the same time, ferroelectric properties of the PZT thin film are improved by (SZO)_(10)(STO)_(90) seeding layer, remanent polarization increases from 26.8 μC/cm~2 to 38.8 μC/cm~2.
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