J.Lee
金属学报(英文版)
ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films were investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductivity measurement and scanning electron microscopy. Only the strong 002 peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films was found to alter the film's microstructure and properties, including crystallinity, porosity, grain size, internal stress level and resistivity. It was also found that afier annealing, the conductivity of poorly conductive samples ofien improved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films can be decreased from 10e to 10^-4Ω·cm after annealing in nitrogen. To explain the effects of annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cause diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films, which may decrease the resistivity of the films. On the other hand, annealing may also increase the oorositv of thin films, leadine to an increase in resistivity.
关键词:
zinc oxide thin films
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null
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钟志有
,
顾锦华
,
孙奉娄
,
杨春勇
,
侯金
人工晶体学报
采用射频磁控溅射方法在玻璃基片上制备了镓掺杂氧化锌(Ga∶ ZnO)透明导电薄膜,通过XRD、XPS、四探针仪和分光光度计等表征技术,研究了衬底温度对Ga∶ ZnO薄膜结构、组分、光学和电学性质的影响.结果表明:所有样品均为具有(002)择优取向的高质量透明导电薄膜,其晶体结构和光电性能与衬底温度密切相关.当衬底温度为673 K时,所制备的Ga∶ ZnO薄膜具有最大的晶粒尺寸(72.6 nm)、最低的电阻率(1.3×10-3Ω·cm)、较高的可见∶ZnO薄膜的光学能隙,结果显示随着衬底温度的升高,薄膜的光学能隙单调增加.
关键词:
氧化锌薄膜
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磁控溅射
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光电性能
