X.Sun
,
Z.J.Ding
,
H.M.Li
,
K.Salma
,
Z.M.Zhang
,
W.S.Tan
金属学报(英文版)
A Monte Carlo model considering the electron spin direction and spin asymmetry has been developed. The energy distribution of the secondary electron polarization and the primary energy dependence of the polarization from Fe are studied. The simulation results show that: (1) the intensity of the spin-up secondary electrons is larger thanvthat of thevspin-down secondary electrons, suggesting the secondary electrons are spin polarized; (2) the spin polarization of secondary electrons with nearly zero kinetic energy is higher than the average valance spin polarization, Pb=27 0.000000or Fe. With increasing kinetic energy, the spin polarization of the secondary electrons decreases to the value of Pu remaining constant at higher kinetic energies; (3) the spin polarization increases with an increase in the primary energy and reaches a saturation value at higher primary energy in both the Monte Carlo simulation and experimental results.
关键词:
spin polarization
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X.F.Han
材料科学技术（英文）
Nano-ring-type magnetic tunnel junctions (NR-MTJs) with the layer structure of Ta(5)/Ir22Mn78(10)/Co75Fe25(2)/Ru(0.75)/Co60Fe20B20(3)/Al(0.6)-oxide/Co60Fe20B20(2.5)/Ta(3)/Ru(5) (thickness unit: nm) were nano-fabricated on the Si(100)/SiO2 substrate using magnetron sputtering deposition combined with the optical lithography, electron beam lithography (EBL) and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunneling magnetoresistance (TMR & R) versus driving current (I) loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co60Fe20B20 layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch2 even 6 Gbite/inch2 are possible using both 1 NR-MTJ+1 transistor structure and current switching mechanism based on based on our fabricated 4×4 MRAM demo devices.
关键词:
Nano-ring-type magnetic tunnel junctions
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