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钇和硅对Ni_3Al基IC6合金组织和性能的影响

韩雅芳 , 肖程波

金属学报

利用电子探针研究了不同含量Y和Si对定向凝固Ni3Al基合金IC6微观组织的影响,测定了合金的1100℃抗氧化性能、1100℃/80MPa持久性能、1100℃热疲劳性能以及各种温度下的瞬时性能,结果表明,加适量Y有利于提高IC6合金的高温抗氧化性能、持久性能和热疲劳性能,Si也有利于提高IC6合金的高温抗氧化性能,而对持久性能和热疲劳性能不利,Y和Si对IC6合金联的瞬时性能均无明显影响

关键词: Ni_3Al , yttrium , silicon , microstructure , mechanical property

高速钢中(M,Si)_6C 碳化物的研究

潘复生 , 丁培道 , 周守则

材料研究学报

本文采用W3Mo2Cr4V 和Fe-16Mo-0.9C 两种合金,研究了Si 对M_6C 碳化物的组成和稳定性的影响,着重讨论了(M,Si)_6C 碳化物的组成和稳定性与含Si 高速钢的相变和回火硬度的关系。分析表明,(M,Si)_6C 的稳定程度对含Si 高速钢的回火硬度具有决定性的影响。提出了高速钢中能否使用Si 作为合金元素的△W 判据。

关键词: 高速钢 , M_6C carbide , secondary hardness , silicon

低合金高速钢W3Mo2Cr4VSi的组织和性能

潘复生 , 周守则 , 丁培道

材料研究学报

本文研究了低合金高速钢W3Mo2Cr4VSi 的显微组织和力学性能,讨论了该钢的性能、成分和组织之间的关系。结果表明:该钢主要依靠MC 型碳化物产生二次硬化;在600℃以下,其力学性能和M2高速钢相当,具有良好的强度、硬度和韧性的配合。

关键词: 高速钢 , tool steel , secondary hardening , tempered , silicon

EFFECT OF SILICON ON THE MICROSTRUCTURE AND MECHANICAL PROPERTIES OF YTTRIUM MODIFIED Ni_3Al BASE ALLOY IC6

C.B. Xiao , Y.F. Had and X.A. Zhang (Cast Superalloys Lab. , Beijing Institute of Aeronautical Materials (BIAM) , Beijing 100095 , China)

金属学报(英文版)

The effect of different amounts of silicon on the microstructure of the yttrium modified Ni3Al base alloy IC6 was studied with transmission electron microscope (TEM). The chemical compositions of phases formed due to the presence of silicon and yttrium were analyzed with energy dispersive spectrum(EDS) technique of electron probe microstructural analysis (EPMA). The results showed that a bulk shape phase rich in Mo and Si was formed in the alloys with addition of 0.10-0.20wt%Si and 0.12wt%Y, and that a needle like phase named Y-NiMo was precipitated in the interdendritic area in the alloy with addition of 0.30wt%Si and 0.12wt%Y besides the formation of the bulk shape phase mentioned above. The stress rupture properties under 1100℃/80MPa and the thermal fatigue properties at 1100℃ were improved by adding 0. 12wt%Y but decreased by adding 0.10-0.30wt%Si and 0.12wt%Y. The addition of 0. 10-0.20wt%Si and 0.12wt%Y has no obvious influence on the tensile properties of alloy IC6 at room temperature (R. T.), 760, and 900℃, respectively.

关键词: silicon , null , null , null , null

Antimony Induced Crystallization of Amorphous Silicon

Y. Wang , H.Z. Li , C.N. Yu , G.M. Wu , I. Gordon , P. Schattschneider , O. Van Der Biest , null , null , null , null , null , null , null , null , null , null

金属学报(英文版)

Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE (molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

关键词: antimony , null , null , null

Optimization and Calculation of the Al-Be-Si System

DU Yong Q.S.Ran JIN Zhanpeng G.Effenberg DING Wei Dept.of Materials Science and Engineering , Central-South University of Technology , Changsha , 410083 , ChinaMax-Planck-Institut fur Metallforschung , Institut fur Werkstoffwissenschaften , Heisenbergstrasse 5 , D-7000

材料科学技术(英文)

Lattice stability of Be is estimated,and interaction parameters for the liquids in the Al-Be and Be-Si systems are obtained using phase dia- gram data from literatures.Using the obtained parameters and the lattice stabilities of Al and Si given in the literatures,the Al-Be and Be-Si phase diagrams are calculated.By means of Kohler's for- mula the Gibbs energy for the liquid phase in the Al-Be-Si ternary system is extrapolated.The calcu- lation shows that no excess ternary term is necessa- ry for the thermodynamic description of the system. The liquidus projection,isothermal section at 1273 K,as well as vertical sections at 94 and 88 wt-% Al and 2 wt-% Be are calculated.The calcu- lated results are in reasonable agreement with the experimental data available.

关键词: thermodynamics , null , null , null , null , null

辉光放电光谱法测定因瓦合金中14种元素

刘洁 , 葛晶晶 , 孙中华

冶金分析 doi:10.13228/j.boyuan.issn1000-7571.009946

采用11种与因瓦合金成分含量相接近的镍基合金标准样品绘制校准曲线,建立了基本不需要样品处理即可对因瓦合金中14种元素( C、Si、Mn、P、S、Ni、Cr、Mo、Cu、Al、Nb、Ti、Co、Fe)同时测定的辉光放电光谱法。确定辉光光谱仪检测因瓦合金的最佳条件:模块电压和相电压分别为8.22 V和3.82 V;功率为70 W;冲洗时间为80 s;积分时间为60 s。以各元素质量分数为横坐标,其对应的光谱强度为纵坐标绘制校准曲线,各元素校准曲线的相关系数均在0.99以上。采用实验方法对因瓦合金实际样品进行分析,结果显示:Cr、Ni、Mo、Ti、Fe的质量分数均大于0.3%,各元素测定值的相对标准偏差(RSD,n=11)均不大于1%;C、Si、Mn、P、S、Cu、Al、Nb、Co的质量分数均小于0.3%,各元素测定值的RSD(n=11)均小于5%。将实验方法应用于对因瓦合金样品中14种元素的测定,测得结果与滴定法测定Ni和Fe、高频燃烧红外吸收法测定C和S、电感耦合等离子体原子发射光谱法测定Si、Mn、P、Cr、Mo、Cu、Al、Nb、Ti和Co元素的结果基本一致。

关键词: 辉光放电光谱法 , 因瓦合金 , , , , , , ,

电感耦合等离子体原子发射光谱法测定铝镁环中硅锰铁钛铜磷

李存根 , 关漫漫 , 郑建道 , 李建国 , 王丽君

冶金分析 doi:10.13228/j.boyuan.issn1000-7571.009610

以盐酸和硝酸溶解铝镁环样品,选择Si 212.412 nm、Mn 257.610 nm、Fe 238.204 nm、Ti 334.940 nm、Cu 324.752 nm、P 187.221 nm作为分析线,采用基体匹配法绘制校准曲线消除基体效应的影响,使用电感耦合等离子体原子发射光谱法(ICP-AES)测定铝镁环中硅、锰、铁、钛、铜、磷.各待测元素校准曲线线性相关系数均大于0.999.方法中各待测元素的检出限为0.001 1~0.020 μg/mL,测定下限为0.003 7~0.067 μg/mL.按照实验方法测定样品中硅、锰、铁、钛、铜、磷,结果的相对标准偏差(RSD,n=6)为0.62%~3.1%;各元素的回收率在89%~116%之间.按照实验方法测定样品中硅、锰、铁、钛、铜、磷,测定值与分光光度法及原子吸收光谱法测定结果相吻合.

关键词: 电感耦合等离子体原子发射光谱法 , 基体匹配 , 铝镁环 , , , , , ,

电感耦合等离子体原子发射光谱法测定含碳质钒矿石中硅铝铁钒磷

王干珍 , 汤行 , 叶明 , 严慧 , 易晓明 , 郭腊梅

冶金分析 doi:10.13228/j.boyuan.issn1000-7571.009798

样品采用过氧化钠在650℃熔融20 min,经盐酸酸化后,选取Si 251.612 nm、Al237.312 nm、Fe 259.837 nm、V 292.402 nm、P 213.618 nm为分析谱线,使用电感耦合等离子体原子发射光谱法(ICP-AES)同时测定硅、铝、铁、钒和磷,从而建立了含碳质钒矿石中硅、铝、铁、钒、磷的测定方法.结果表明,不单独进行灼烧除碳而采用直接碱熔的方法处理样品,对此类型样品各元素测定结果没有影响;当样品称样量为0.2g时,加入2 g过氧化钠可以使样品熔解完全;而硅需在样品处理后24 h内测定,以免导致结果偏低.各元素质量分数在一定范围内与其发射强度呈线性,校准曲线的线性相关系数r=0.999 9;方法中各元素的检出限为18~117 mg/kg.实验方法用于测定两个含碳质钒矿石样品中硅、铝、铁、钒、磷,结果的相对标准偏差(RSD,n=12)在1.0%~5.4%之间.按照实验方法测定7个含碳质钒矿石样品中硅、铝、铁、钒、磷,结果与采用其他方法的测定结果相吻合.

关键词: 碱熔 , 电感耦合等离子体原子发射光谱法(ICP-AES) , 含碳质钒矿石 , , , , ,

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