{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"Influences of <span style=\"color:red\">sulphureous</span> <span style=\"color:red\">impurity</span> and micro-shrinkage on hydrogen assisted cracking (HAC) and fracture behavior of the super-strength low-alloy steel 40CrMnSzMo VA have been studied in this paper.By way of scanning electron microfractography (SEM)and electron probe microanalyser to investigate the fractography of material constantly strained to failure, it was found that the microscopic segregation of <span style=\"color:red\">sulphureous</span> <span style=\"color:red\">impurity</span> and micro-shrinkage not only increased strongly the susceptibility to hydrongen embrittlement (HE), but also made the HAC to initiate preferably in such regions with the assistant of stress induced diffusion of hydrogen. The microscopic observation revealed that the steel has commonly intergranular (IG) and quasi-cleavage (QC)features around the segregation of <span style=\"color:red\">sulphureous</span> <span style=\"color:red\">impurity</span> and micro-shrinkage for their strong effects of irreversible traps for hydrogen.","authors":[{"authorName":"S.K.He","id":"91eb841d-a3b0-4cb7-b87e-55697afbf3b8","originalAuthorName":"S.K.He"},{"authorName":"G.S. Wang and S.N. Wang(Beijing institute of Aeronautical Materials","id":"236fe0b3-410a-4f59-b311-e753b0c30992","originalAuthorName":"G.S. Wang and S.N. Wang(Beijing institute of Aeronautical Materials"},{"authorName":"Beijing 100095","id":"1939f38c-9767-4736-85ce-a5814986d334","originalAuthorName":"Beijing 100095"},{"authorName":"China Manuscript received 26 August 1996)","id":"f7af99e2-4144-4a78-af55-c37e2741115d","originalAuthorName":"China Manuscript received 26 August 1996)"}],"categoryName":"|","doi":"","fpage":"619","id":"e18110cd-f5d3-44d0-9121-10265d96d212","issue":"6","journal":{"abbrevTitle":"JSXBYWB","coverImgSrc":"journal/img/cover/amse.jpg","id":"49","issnPpub":"1006-7191","publisherId":"JSXBYWB","title":"金属学报(英文版)"},"keywords":[{"id":"0d42be9f-2030-45e6-b0ba-b7a19dada97d","keyword":":micro-shrinkage","originalKeyword":":micro-shrinkage"},{"id":"c6b5436e-a138-4d25-b306-c85d08481851","keyword":"null","originalKeyword":"null"},{"id":"7f74d2b1-7aa3-4a5e-b2e9-e73264eb2e2f","keyword":"null","originalKeyword":"null"},{"id":"c089347d-f9fb-48cd-8cd2-7ae955e36589","keyword":"null","originalKeyword":"null"}],"language":"en","publisherId":"1006-7191_1996_6_6","title":"INFLUENCES OF <span style=\"color:red\">SULPHUREOUS</span> <span style=\"color:red\">IMPURITY</span> AND MICROSHRINKAGE ON HAC BEHAVIOR OF SUPER-STRENGTH STEEL","volume":"9","year":"1996"},{"abstractinfo":"By using first-principles DMol and the discrete-variational method (DVM) based on density functional theory, we investigated the effect of some light impurities, H, B, C, N and O, on the electronic structure of their corresponding different <span style=\"color:red\">impurity</span>-doped systems in gamma-TiAl. The <span style=\"color:red\">impurity</span> formation energy, Mulliken occupation, bond order and charge density difference have been calculated to study the <span style=\"color:red\">impurity</span>-induced changes in the energetics and electronic structure. According to the <span style=\"color:red\">impurity</span> formation energy, it is found that the impurities energetically prefer to occupy the Ti-rich octahedron interstitial sites in the order H < B < O < N < C. Charge transfer suggests that the effect of the impurities is localized and the bond order as well as charge density difference results show that B, C and N are beneficial for the ductility of TiAl, while H and O are not.","authors":[],"categoryName":"|","doi":"","fpage":"8803","id":"7fa010ff-9e61-44c4-9691-8178558017d5","issue":"39","journal":{"abbrevTitle":"JOPM","id":"f0e359df-48a6-4a7f-b16d-2389d3e793ee","issnPpub":"0953-8984","publisherId":"JOPM","title":"Journal of Physics-Condensed Matter"},"keywords":[{"id":"01a60bd3-4354-40ea-b5b2-690b52fcc97f","keyword":"mechanical-properties;intermetallic compound;base alloys;ductility;molecules;nitrogen;purity;carbon;ni3al;boron","originalKeyword":"mechanical-properties;intermetallic compound;base alloys;ductility;molecules;nitrogen;purity;carbon;ni3al;boron"}],"language":"en","publisherId":"0953-8984_2006_39_1","title":"Light <span style=\"color:red\">impurity</span> effects on the electronic structure in TiAl","volume":"18","year":"2006"},{"abstractinfo":"In this work, we study the properties of the Rashba-induced spin accumulation in a quantum wire, by considering an <span style=\"color:red\">impurity</span> in this system. First, in the zero-<span style=\"color:red\">impurity</span> case, the dependence of the spin accumulation on the structure parameters is shown, it is consequently found that in addition to the quantum interference, the spin accumulation is determined by the quantum-wire bandwidth and the external bias. Next we, respectively, consider the cases of the <span style=\"color:red\">impurity</span> in the Rashba region and the normal region to present the effect of the <span style=\"color:red\">impurity</span> on the spin accumulation. We see that the <span style=\"color:red\">impurity</span> destroys the spin accumulation in a nontrivial way, and its influence on the spin accumulation is tightly associated with the coupling manners and strengths between the <span style=\"color:red\">impurity</span> and the quantum wire and the <span style=\"color:red\">impurity</span> energy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3532036]","authors":[],"categoryName":"|","doi":"","fpage":"","id":"4ac177b5-7de5-4e05-8874-359c411a54e4","issue":"2","journal":{"abbrevTitle":"JOAP","id":"7dcf8a89-0513-40ee-be2d-759941dcef7e","issnPpub":"0021-8979","publisherId":"JOAP","title":"Journal of Applied Physics"},"keywords":[{"id":"4643dc82-5834-45f4-82ea-fb8d6562c709","keyword":"electronic transport;dot;spintronics;layers;wells;inas","originalKeyword":"electronic transport;dot;spintronics;layers;wells;inas"}],"language":"en","publisherId":"0021-8979_2011_2_1","title":"Rashba-induced spin accumulation in a quantum wire with an <span style=\"color:red\">impurity</span>","volume":"109","year":"2011"},{"abstractinfo":"This paper studies first-principles plane-wave pseudopotential based on density functional theory of hydrogen vacancy, metal <span style=\"color:red\">impurity</span>, <span style=\"color:red\">impurity</span> vacancy complex in LiNH(2), a promising material for hydrogen storage. It finds easy formation of H vacancy in the form of <span style=\"color:red\">impurity</span> vacancy complex, and the rate-limiting step to the H diffusion. Based on the analysis of the density of states, it finds that the improvement of the dehydrogenating kinetics of LiNH(2) by Ti catalysts and Mg substitution is due to the weak bonding of N-H and the new system metal-like, which makes H atom diffuse easily. The mulliken overlap population analysis shows that H vacancy leads to the H local diffusion, whereas <span style=\"color:red\">impurity</span> vacancy complexes result from H nonlocal diffusion, which plays a dominant role in the process of dehydrogenation reaction of LiNH(2).","authors":[],"categoryName":"|","doi":"","fpage":"","id":"ddcc1f62-9cd9-4056-9b1d-37edaeed8b86","issue":"3","journal":{"abbrevTitle":"CPB","id":"57e2e54c-6b19-4ae9-b1e4-f37662ba2dcc","issnPpub":"1674-1056","publisherId":"CPB","title":"Chinese Physics B"},"keywords":[{"id":"e213fc7f-03e4-46e9-bdcc-edf43024bc18","keyword":"LiNH(2);first-principles calculation;<span style=\"color:red\">impurity</span>-vacancy complexes;dehydrogenating properties;hydrogen storage;nitrides","originalKeyword":"LiNH(2);first-principles calculation;impurity-vacancy complexes;dehydrogenating properties;hydrogen storage;nitrides"}],"language":"en","publisherId":"1674-1056_2011_3_1","title":"The role of vacancy, <span style=\"color:red\">impurity</span>, <span style=\"color:red\">impurity</span>-vacancy complex in the kinetics of LiNH(2) complex hydrides: a first-principles study","volume":"20","year":"2011"},{"abstractinfo":"Ground state energies of shallow states of donor impurities on cosine-shaped, periodically rough interfaces formed by two isotropic semiconductors, such as GaAs/Ga1-xAlxAs or GaAs/vacuum, are calculated variationally with the approximation that the interfaces represent infinitely high potential barriers. The results show that changes in the ground state energies of interfaces <span style=\"color:red\">impurity</span> states caused by rough interface are not negligible especially for GaAs/Ga1-xAlxAs interfaces with sharp or dense interface defects.","authors":[],"categoryName":"|","doi":"","fpage":"229","id":"5545ff7e-6011-43e8-a6ef-e7cf5361f693","issue":"2","journal":{"abbrevTitle":"CITP","id":"45f28bf6-874e-4b98-936f-4562e2c56a77","issnPpub":"0253-6102","publisherId":"CITP","title":"Communications in Theoretical Physics"},"keywords":[{"id":"06ad6c7b-5239-4153-bab9-cef2dc010fd1","keyword":"shallow-donor;quantum wells;spectra;energy","originalKeyword":"shallow-donor;quantum wells;spectra;energy"}],"language":"en","publisherId":"0253-6102_1992_2_1","title":"DONOR <span style=\"color:red\">IMPURITY</span> STATES ON ROUGH SEMICONDUCTOR INTERFACES","volume":"17","year":"1992"},{"abstractinfo":"Ground-state energies of shallow states of donor impurities on periodically structured interfaces formed by two semiconductors, such as GaAs/Ga1-xAlxAs and Si/SiO2 interfaces, are calculated variationally with the approximation that interfaces represent infinitely high potential barriers. The results show that the ground-state energies of the interface <span style=\"color:red\">impurity</span> states can be strongly affected by interface structures in GaAs/Ga1-xAlxAs lateral surface superlattices produced by molecular-beam-epitaxy growth of AlAs/GaAs fractional-layer superlattices on [001] vicinal GaAs substrates and on SiO2/Si interfaces for Si with (001) orientation. The effects of the interface defects on the interface <span style=\"color:red\">impurity</span> states are negligible for Si/SiO2 interfaces when the density of interface defects is less than 10(10)/cm2.","authors":[],"categoryName":"|","doi":"","fpage":"2244","id":"dace7e6d-3f72-4abb-a00f-4fab6ee85ed9","issue":"4","journal":{"abbrevTitle":"PRB","id":"48ba155b-d6de-484c-bd85-973be949b8c5","issnPpub":"1098-0121","publisherId":"PRB","title":"Physical Review B"},"keywords":[{"id":"3e91d415-6d83-4634-be65-6efb97c37b3d","keyword":"quantum wells;shallow-donor;si/sio2 interface;vicinal surfaces;confinement;resistance;roughness;spectra;energy","originalKeyword":"quantum wells;shallow-donor;si/sio2 interface;vicinal surfaces;confinement;resistance;roughness;spectra;energy"}],"language":"en","publisherId":"1098-0121_1992_4_1","title":"DONOR <span style=\"color:red\">IMPURITY</span> STATES ON STRUCTURED SEMICONDUCTOR INTERFACES","volume":"46","year":"1992"},{"abstractinfo":"We study theoretically the transport properties of an interacting quantum wire in the presence of a time-dependent point <span style=\"color:red\">impurity</span>. Using the Keldysh formalism within the framework of Luttinger liquid model, we calculate and analyze the dc contribution of the backscattered current and the shot noise of the system with arbitrary Luttinger interaction strength and <span style=\"color:red\">impurity</span> position. From some numerical examples, we find that the time-dependent point <span style=\"color:red\">impurity</span> in the wire can enhance the total current in the strongly interaction regime, and the total current enhancement is dependent on both the <span style=\"color:red\">impurity</span> potential frequency and the equivalent frequency in relation to the drain-source voltage V. The dc contribution of the backscattered current oscillates as a function of <span style=\"color:red\">impurity</span> frequency with the period depending on the Luttinger interaction strength. Furthermore, the oscillation of the dc contribution of the backscattered current is not a finite-length effect, which is different from that in the case of system with a static point <span style=\"color:red\">impurity</span>, and the oscillation characteristic is also connected with V. However, the final current-noise relation is similar to that in the case of a static point <span style=\"color:red\">impurity</span>.","authors":[],"categoryName":"|","doi":"","fpage":"","id":"270228bd-900b-43ae-95e8-9eac19cd09f7","issue":"12","journal":{"abbrevTitle":"PRB","id":"48ba155b-d6de-484c-bd85-973be949b8c5","issnPpub":"1098-0121","publisherId":"PRB","title":"Physical Review B"},"keywords":[],"language":"en","publisherId":"1098-0121_2006_12_1","title":"Transport properties for a Luttinger liquid wire in the presence of a time-dependent <span style=\"color:red\">impurity</span>","volume":"73","year":"2006"},{"abstractinfo":"Considering the image potential, we calculate the binding energies of a shallow donor <span style=\"color:red\">impurity</span> placed on the centre of a quantum box using the variational approach. The results we have obtained show that there is a great difference of the effects of image potential between the cases including <span style=\"color:red\">impurity</span> ion image potential and including the image potentials of <span style=\"color:red\">impurity</span> ion and electron simultaneously. The results also show that the image potential is important, especially when the dimensions of quantum box become small.","authors":[],"categoryName":"|","doi":"","fpage":"399","id":"7d3f3589-31bf-4e9b-b160-c49de7836a3a","issue":"6","journal":{"abbrevTitle":"SSC","id":"94184338-76ce-44bb-99c2-e5721f7e37e3","issnPpub":"0038-1098","publisherId":"SSC","title":"Solid State Communications"},"keywords":[{"id":"8c9658e7-3468-4b19-9353-0bd2642666de","keyword":"well;gaas-ga1-xalxas;states","originalKeyword":"well;gaas-ga1-xalxas;states"}],"language":"en","publisherId":"0038-1098_1993_6_1","title":"SHALLOW DONOR <span style=\"color:red\">IMPURITY</span> IN A QUANTUM BOX - EFFECTS OF IMAGE POTENTIAL","volume":"86","year":"1993"},{"abstractinfo":"The effects of an image potential on the electronic and hydrogenic <span style=\"color:red\">impurity</span> states in AlAs/GaAs/AlAs quantum wells are calculated by using variational solutions to the effective-mass equation. The results we have obtained show that when the image potential is added the variations of electronic state energy levels and <span style=\"color:red\">impurity</span> binding energies are significant, especially when the width of the quantum well becomes narrow. The results also show that the effects of the <span style=\"color:red\">impurity</span>-ion image potential on <span style=\"color:red\">impurity</span> binding energies are much larger than those of the electron image potential.","authors":[],"categoryName":"|","doi":"","fpage":"8083","id":"746e405e-e9f0-44c3-8a38-6f3a52af65ca","issue":"11","journal":{"abbrevTitle":"PRB","id":"41d73232-e732-4216-a5f7-4b352bb955cf","issnPpub":"0163-1829","publisherId":"PRB","title":"Physical Review B"},"keywords":[{"id":"dc514c3f-50cf-42bd-a58c-ac8555ecc646","keyword":"2 orthogonal surfaces;binding-energies;vicinity","originalKeyword":"2 orthogonal surfaces;binding-energies;vicinity"}],"language":"en","publisherId":"0163-1829_1993_11_1","title":"EFFECTS OF IMAGE POTENTIAL ON ELECTRONIC AND <span style=\"color:red\">IMPURITY</span> STATES IN QUANTUM-WELLS","volume":"48","year":"1993"},{"abstractinfo":"We theoretically investigate the effect of a single finite-size attractive <span style=\"color:red\">impurity</span> on the electron transport of a semiconductor quantum wire under the influence of a terahertz electromagnetic field illumination. In the free-particle framework, the time-dependent electronic states are obtained by introducing an unitary transformation, and the electronic transmission of the system is obtained by using the scattering matrix approach. In the case of the field frequency resonant with the lateral energy spacing of the two lowest levels, a step-like structure for the transmission probability versus the total electron energy is predicted. Furthermore, due to the interplay between the single <span style=\"color:red\">impurity</span> and the applied field, the transmission probability curve in the non-resonant case shows a structure of a resonance dip on the interference pattern background with certain parameters of the <span style=\"color:red\">impurity</span>.","authors":[],"categoryName":"|","doi":"","fpage":"2263","id":"f01b6c95-1e39-48b9-ae62-e8fba5206be9","issue":"11","journal":{"abbrevTitle":"CPL","id":"5ed132a3-239d-489d-851e-c3369888be98","issnPpub":"0256-307X","publisherId":"CPL","title":"Chinese Physics Letters"},"keywords":[{"id":"0efeaa87-1707-43fe-895c-4b3d154c3cd5","keyword":"conductance quantization;channel;scattering;contacts;wave","originalKeyword":"conductance quantization;channel;scattering;contacts;wave"}],"language":"en","publisherId":"0256-307X_2004_11_1","title":"Electron transport of an <span style=\"color:red\">impurity</span> quantum wire under THz electromagnetic field illumination","volume":"21","year":"2004"}],"totalpage":33,"totalrecord":323}