孙英岚
,
边继明
,
孙景昌
,
梁红伟
,
邹崇文
,
骆英民
无机材料学报
doi:10.3724/SP.J.1077.2010.10636
使用低温水热法在Si衬底上生长ZnO纳米棒阵列. 通过X射线衍射和扫描电子显微镜对ZnO纳米棒的结晶性和形貌进行观测. 结果表明, 六棱柱形ZnO纳米棒沿 c 轴方向的阵列性良好, 且均匀致密的生长在衬底上. 室温光致发光谱表明应用低温水热法可以得到光学性质良好的ZnO纳米棒阵列. 使用同步辐射对ZnO纳米棒阵列的氧K带边进行X射线吸收近带边谱测量, 研究了不同半径ZnO纳米棒阵列的局部电子结构及其半径对电子结构的影响. 另外, 对ZnO纳米棒及ZnO薄膜的局部电子结构进行了对比研究.
关键词:
ZnO纳米棒阵列
,
hydrothermal
,
photoluminescence
,
X-ray absorption near-edgespectroscope
倪自丰刘利国王永光
材料研究学报
使用高纯SnO2粉和石墨粉混合物作为锡催化剂的来源, 硅片作为硅的来源和产物生长的基底, 用化学气相沉积法在硅片上准备了有序排列的氧化硅纳米线组成的微米结构, 用扫描电子显微镜(SEM)、X--射线能谱仪(EDX)、透射电子显微镜(TEM)和选区电子衍射谱图(SAED)对其进行了表征。结果表明: 直径为5--15 μ m, 长度达到50--100 μm的微米结构由紧密排列的非晶氧化硅纳米线组成, 氧化硅纳米线的直径为100--200 nm, 长度达到50--100 μm。根据对其生长过程的分析, 锡催化生长表现出不同于传统的VLS机制, 一颗锡催化剂液滴能同时诱导多根纳米线的生长。根据室温下的光致发光谱分析, 非晶氧化硅纳米线在395 nm(3.14 eV)处有一强峰, 激发波长为260 nm(4.77 eV)。
关键词:
无机非金属材料
,
silica nanowires
,
chemical–vapor–deposition (CVD)
,
carbothermal reduction
,
photoluminescence
李彬
,
田一光
,
孟继武
材料研究学报
首次用高温固相反应合成了Li_(0.5)MAl_(0.5)SiO_4:Eu,Bi(M=Mg,Ca,Sr,Ba)发光体,研究了基质中不同碱土金属离子对Eu~(3+)和Bi~(3+)的发光特性以及Bi~(3+)敏化Eu~(3+)发光性能和能量传递特点,得到了良好的基质组成和一些规律性结果。用395nm 紫外线激发,M=Mg 时的发光强度比Y(V,P)O_4:Eu强约60%。Bi~(3+)发光的Stokes 位移与M(Ⅱ)的离子半径呈线性关系。
关键词:
无机材料
,
photoluminescence
,
silicate
Y.B. Hou
金属学报(英文版)
In this paper, the PMMA films doped with N,N'-diphenyl-N,N'-di(m-tolyl)-benzidineand rubrene were fabricated by spin coating, and the effect of photooxidation onthe photoluminescence of the doped PMMA thin films was investigated. The resultsshowed that under the irradiation of 350nm UV light, N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine can sensitized rubrene and results in the enhancement in the photooxrationof rubrene. The effect of photooxidation on the photoluminescence from rubrene w asmore obvious. Both lifetime measurement and in situ measurement of photolumines-cence showed that rubrene molecules exist in two chemical surroundings.
关键词:
photoluminescence
,
null
Journal of Physics-Condensed Matter
We have achieved production of porous silicon (PS) that emits blue light at a peak wavelength of 460 nm. On storing it in air for three months, or illuminating it with the 365 nm line of a uv lamp, its photoluminescence intensity and peak wavelength remain stable. With Fourier-transform infrared (MR) measurements, we have studied the surface chemical bonds of the PS emitting blue light, and compared its FTIR spectrum with those of the as-prepared PS emitting red-orange light, and those of the processed PS emitting no light. We consider that the blue light emission originates from the SiO(x) layers covering nanoscale silicon units in PS.
关键词:
photoluminescence
C.Y.Chen
,
W.D.Chen
,
Y.Q.Wang
金属学报(英文版)
A systematic investigation of the role of hydrogen in hydrogenated amorphous substo-ichiometric silicon oxide films (a-SiOx :H) implanted with erbium is presented. Theexperimental results show that Er3+ luminescence increases with annealing tempera-ture up to 535℃ and then drop sharply. Our work suggests that hydrogen evolutionduring annealing below 535℃ results in a reduction of defects in the films, and hencean improved Er3+ emission.
关键词:
photoluminescence
,
null
,
null
J. Xu
金属学报(英文版)
Gallium Nitride film was successfully separated from sapphire substrate by laser radi-ation. The absorption of the 248nm radiation by the GaN at the interface results inrapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas.The substrate can be easily removed by heating above the Ga melting point (29℃).X-ray diffraction, atomic force microscopy and Photoluminescence of GaN before andafter lift-off process have been performed, which demonstrated that the separation andtransfer process do not alter the structural quality of the GaN films. And further dis-cussions on the threshold energy and crack-free strategies of laser lift-off process havealso been presented.
关键词:
GaN
,
null
,
null
,
null
,
null
,
null
吴鸿轩
,
杜宁
,
翟传鑫
,
吴平
,
杨德仁
材料科学与工程学报
纳米管材料具有种种优异性能,而通常合成纳米管使用的硬模板法则有模板去除条件苛刻、易破坏纳米管结构等缺点。本文在乙二醇中合成了水溶性的Na2SiF6纳米棒,并以此作为模板沉积ZnS掺Mn2＋材料,通过后续简单水洗,得到了ZnS：Mn2＋纳米管,并对其光学性能进行了表征。
关键词:
纳米管
,
水溶性模板
,
硫化锌掺锰
,
光致发光
胡志刚
,
周勋
,
徐明
,
刘方舒
,
段满益
,
吴定才
,
董成军
,
陈尚荣
,
吴艳南
,
纪红萱
,
令狐荣锋
人工晶体学报
采用溶胶-凝胶法在玻璃基片上旋涂生长了ZnO、Fe, Ni单掺杂及(Fe,Ni)共掺杂ZnO薄膜.产物的显微照片及XRD图谱结果表明, 该方法所制备的ZnO薄膜表面均匀致密,都存在(002)择优取向,具有六角纤锌矿结构,晶粒尺寸平均在13 nm 左右,振动样品磁强计(VSM)测试结果显示掺杂ZnO薄膜均存在室温铁磁性.光致发光(PL)测量表明所有样品薄膜的PL谱主要由较强的紫外发光峰(394 nm)、蓝光峰(420 nm)、绿光峰(480 nm)组成.Fe、Ni单掺杂和共掺杂并不改变ZnO薄膜的发光峰位置,但掺杂后该紫外发光峰减弱,420 nm处的蓝光峰增强.
关键词:
ZnO薄膜
,
Fe,Ni掺杂
,
光致发光
,
溶胶-凝胶法
,
室温铁磁性
