程华王萍崔岩吴爱民石南林
材料研究学报
以Ar+SiH4作为反应气体, 采用电子回旋共振等离子体增强化学气相沉积(ECR--PECVD)方法制备微晶硅薄膜, 研究了基片温度对薄膜微观结构、吸收系数、光学禁带宽度的影响。结果表明, 随着基片温度的升高, 薄膜的微观组织逐渐由非晶转化为微晶, 薄膜的粗糙度单调增大, 而H含量则单调减小。薄膜的光学吸收系数随基片温度的升高而增大, 禁带宽度由1.89 eV降低到1.75 eV。
关键词:
材料合成与加工工艺
,
microcrystalline silicon film
,
ECR-PECVD
,
absorption coefficient
,
optical bandgap
H.D. Yang
金属学报(英文版)
Raman spectra and scanning electron microscope (SEM) techniques were used to determine the structural properties of microcrystalline silicon (μc-Si:H) films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer, corning 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Corning 7059 glass, the surfaces of the μc-Si:H films are fairly smooth because of the homogenous growth or little lattice mismatch. But for general optical glass, the surface of the μc-Si:H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si:H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material, and then the deposition rates, optical and electrical properties are also strongly influenced, hence, deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si:H films with device-grade quality on cheap substrates such as general glass.
关键词:
hydrogenated
,
甚高频等离子体增强化学气
程华
,
王萍
,
崔岩
,
吴爱民
,
石南林
材料研究学报
以Ar＋SiH_4作为反应气体,采用电子回旋共振等离子体增强化学气相沉积（ECR-PECVD）方法制备微晶硅薄膜,研究了基片温度对薄膜微观结构、吸收系数、光学禁带宽度的影响。结果表明,随着基片温度的升高,薄膜的微观组织逐渐由非晶转化为微晶,薄膜的粗糙度单调增大,而H含量则单调减小。薄膜的光学吸收系数随基片温度的升高而增大,禁带宽度由1.89 eV降低到1.75 eV。
关键词:
材料合成与加工工艺
,
微晶硅薄膜
,
ECR
,
PECVD
,
吸收系数
,
光学带隙
程华
,
钱永产
,
薛军
,
吴爱民
,
石南林
材料研究学报
用电子回旋共振等离子体增强化学气相沉积(ECR-PECVD)法制备微晶硅薄膜,研究了放电气体对薄膜沉积速率、薄膜中H含量、择优取向和结晶度的影响.结果表明,以Ar作为放电气体时薄膜沉积速率比以H2作为放电气体时高1.5-2倍,但是薄膜的结晶度较低；以Ar作为放电气体时薄膜的H含量比以H2作为放电气体时的薄膜低;放电气体对薄膜的择优取向和晶粒度没有显著的影响.
关键词:
材料合成与加工工艺
,
微晶硅薄膜
,
ECR-PECVD
,
放电气体
陈永生
,
杨仕娥
,
卢景霄
,
郜小勇
,
张宇翔
,
王海燕
,
李瑞
人工晶体学报
doi:10.3969/j.issn.1000-985X.2005.04.039
本文系统研究了PECVD法沉积μc-Si薄膜中衬低温度、氢气稀释率和射频功率等参数对μc-Si薄膜结构特性的影响.表明:随着衬低温度的增加、氢气稀释率的增大、射频功率的提高,薄膜的晶化率增大.沉积薄膜的晶化率最大可达80%,表面粗糙度大约为30nm.通过对反应过程中的能量变化进行了分析,得到反应为放热反应,且非晶结构对沉积参数比较敏感.
关键词:
微晶硅薄膜
,
晶化率
,
等离子体增强化学气相沉积
H.D.Yang
金属学报(英文版)
Raman scattering spectroscopy and scanning electron microscopy (SEM) techniques were used to determine the structural properties of two typical series of microcrystalline silicon (μc-Si:H) films deposited at different VHF plasma power and different working gas pressure by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. Raman spectra measurements show that both crystalline volume fraction Xc and average grain size d of μc-Si: H films are strongly affected by the two deposition conditions and are more sensitive to working gas pressure than VHF plasma power. SEM characterizations have further confirmed that VHF plasma power and working gas pressure could clearly enhance the surface roughness of/xc-Si : H films ascribing to polymerization reactions, which is also more sensitive to working gas pressure than VHF plasma power.
关键词:
VHF-PECVD
,
null
,
null
