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万发荣 , 肖纪美 , 袁逸
金属学报
本文研究了利用超高压电子显微镜测定空位移动能的方法。在引入试样表面与点缺陷相互作用的前提下,提出了新的计算公式。根据该公式,通过测定电子束辐照下位错环的生长速度,可以计算空位迁移能。
关键词: 电子辐照损伤 , vacancy migration energy , interstitial loop
WAN Farong XIAO Jimei YUAN Yi University of Science and Technology Beijing , Beijing , China Lecturer Department of Material Physics , University of Science and Technology Beijing , Beijing 100083 , China
金属学报(英文版)
A method together with a new formula were developed for measuring the vacancy migration energy on HVEM considering the effect of surface sink of specimen on point defects.The va- cancy migration energy may be calculated through the loop growth rate under electron irradiation at various temperatures.
关键词: electron irradiation damage , null , null
