Journal of Applied Physics
Amorphous BC2N powders were prepared by mechanical milling with hexagonal boron nitride and graphite as starting materials. A bulk amorphous BC2N compound was produced by sintering the as-milled amorphous BC2N powders in a vacuum of 10(-5) Torr at a temperature of 1470 K. The conductivity measurement for the bulk amorphous BC2N compound showed that it behaves as a semiconductor with band gap energy of 0.11 eV for temperatures ranging from room temperature to 560 K and a semimetal for temperatures between 560 and 740 K. The mechanism of the formation of the amorphous BC2N powders is discussed. (C) 1998 American Institute of Physics.
关键词:
bc2n
Journal of Materials Research
An amorphous carbon-boron nitride (C-BN) solid was prepared by ball milling the mixture of graphite and hexagonal BN powders for a period of 120 h, After annealing the amorphous C-BN solid for 1 h at atmosphere in the temperature range from 800 to 900 K and then quenching it to room temperature, a small amount of cubic C-BN solid solutions with diamond-like structure, which belong to a high energy phase and can only be synthesized previously under high pressure and temperature (30 GPa, 2000 K), were observed in the annealed amorphous C-BN solid. The lattice constant of the cubic C-BN solid solution was 0.3587 nm, and its grain size was in the range of 10 to 50 nm.
关键词:
bc2n
