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Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering

Jun Gong

材料科学技术(英文)

Aluminum doped zinc oxide (AZO) thin films were prepared by DC magnetron sputtering at low substrate temperature. A coaxial solenoid coil was placed near the magnetron target to enhance the plasma density (Ji). The enhanced plasma density improved significantly the bulk resistivity (ρ) and its homogeneity in spatial distribution of AZO films. X-ray diffraction (XRD) analysis revealed that the increased Ji had influenced the crystallinity, stress relaxation and other material properties. The AZO films deposited in low plasma density (LPD) mode showed marked variation in ρ (ranging from ~6.5×10-2 to 1.9×10-3 ­Ω·cm), whereas those deposited in high plasma density (HPD) mode showed a better homogeneity of films resistivity (ranging from ~1.3×10-3 to 3.3×10-3 ­Ω·cm) at different substrate positions. The average visible transmittance in the wavelength range of 500−800 nm was over 80%, irrespective of the deposition conditions. The atomic force microscopy (AFM) surface morphology showed that AZO films deposited in HPD mode were smoother than that in LPD mode. The high plasma density produced by the coaxial solenoid coil improved the electrical property, surface morphology and the homogeneity in spatial distribution of AZO films deposited at low substrate temperature.

关键词: Sputtering

An Improvement on Adhesion of Sputtered TiC Coating to Steel Substrate

QI Zhenzhong , YAO Weiguo , WANG Yuqi , LIU Ling , JIA Junhui Institute of Solid State Physics , Academia Sinica , Hefei , China.

材料科学技术(英文)

Introducing N_2 during sputtering and pre-oxidation of substrate were investigated to improve the adhesion of sputtered TiC coating to steel substrate. The results show that yeactive gas N_2 increases the adhesion of TiC coating to steel because of a graded interface existing between coating and substrate. The interaction of discharge plasma with the surface of substrate was discussed. Pre-oxidation of substrate is effective for improving the adhesion due to the fomation of FeTi0_3 which appeared as an inteylayer between coating and pre-oxidized substrate.

关键词: Sputtering , null , null , null , null

Mo电极形貌对AIN薄膜择优取向生长的影响

熊娟 , 顾豪爽 , 胡宽

功能材料与器件学报 doi:10.3969/j.issn.1007-4252.2010.02.018

采用射频磁控溅射方法在不同形貌的Mo电极上制备了(002)择优取向的AIN薄膜.采用XRD、FESEM表征了Mo电极及AIN薄膜的结构、表面形貌及择优取向.结果表明,Mo电极的形貌影响AIN薄膜的择优取向生长,在较高溅射气压下沉积的Mo电极晶粒细小、分布均匀,有助于AIN薄膜(002)择优取向生长.

关键词: 磁控溅射 , Mo电极 , AIN薄膜 , 择优取向

溅射辅助微波等离子体化学气相沉积SiCN晶体

万军 , 马志斌 , 曹宏 , 吴振辉 , 汪建华

新型炭材料

在微波等离子体化学气相沉积系统中,利用脉冲氮离子束溅射二氰二氨靶产生的碳氮粒子作为合成前驱物,在石英玻璃基片上研究了SiCN晶体的合成.用扫描电子显微镜(SEM)、X射线能谱(EDX)、X射线衍射(XRD)和X射线光电子能谱(XPS)研究了基片温度对薄膜的形貌、成分和结构的影响.结果表明:随着基片温度的降低,沉积物由截面为六方形的结晶良好的SiCN晶体(800℃)变成发育不完全的聚片状晶体(700℃),直到变成颗粒细小的无定形碳氮薄膜(550℃).衍射峰的强度以及晶胞参数a和c的值随温度的降低而减小.薄膜为C原子部分取代Si_3N_4中的Si原子位置而形成的SiCN晶体,其中N原子主要与Si原子结合,C原子以sp~3C-N、sp~2C=N和sp~2C=C键的形式存在.降低基片温度有利于提高薄膜中的C含量和sp~3C-N键的含量.

关键词: SiCN晶体 , 微波等离子体 , 溅射 , 二氰二氨

通过溅射与退火制备的用于固体氧化物燃料电池的氧化钆掺杂氧化铈电解质隔层

武卫明 , 刘中波 , 赵哲 , 张小敏 , 区定容 , 涂宝峰 , 崔大安 , 程谟杰

催化学报 doi:10.1016/S1872-2067(14)60137-6

采用溅射或溅射与退火相结合的方法制备了一系列氧化钆掺杂的氧化铈(GDC)隔层,并考察了其对固体氧化燃料电池性能的影响。结果表明,200°C下溅射获得了立方结构氧化钆掺杂的氧化铈均匀薄膜,在900-1100°C范围内的退火处理使得GDC薄膜致密,从而有效阻止了氧化钇掺杂的氧化锆电解质与阴极材料之间的反应,大幅度提高了电池的电化学性能。

关键词: 固体氧化物燃料电池 , 稀土金属氧化物 , 氧化钆掺杂的氧化铈 , 隔层 , 溅射 , 退火

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