材料期刊网

SiGe合金半导体中自间隙缺陷和两种碳相关缺陷的计算研究

杨福华 , 谭劲 , 周成冈 , 凌芝

稀有金属 doi:10.3969/j.issn.0258-7076.2009.03.011

采用从头计算(ab initio)的方法对比研究了Si1-xGex合金半导体材料中W缺陷、CiCs缺陷和CiOi缺陷的性质.在S1-xGex合金中,Ge原子不能与缺陷核心的C原子和O原子直接成键,但可能与W缺陷核心的间隙Si原子相连.在含CiOi缺陷的晶胞中,Ge原子倾向于取代沿[110]伸长方向的Si原子.随着合金中Ge含量的升高,W缺陷的形成能不断增加,结构稳定性逐渐降低.与w缺陷不同的是,CiCs缺陷和CiOi缺陷在不同Ge含量的Si1-xGex合金中形成能变化较小,变化幅度在0.15 eV以内,理论研究结果与前人的实验结果相吻合.

关键词: Si1-xGex , 合金 , 从头计算法 , W缺陷 , 碳相关缺陷

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si1-xGex Layer Epitaxied on Si Substrate

Lei ZHAO

材料科学技术（英文）

It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.

关键词: Si1-xGex , high , Ge , content , composition , determi

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si1-xGex Layer Epitaxied on Si Substrate

材料科学技术（英文）

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