于伟东
,
王曦
,
陈静
,
张苗
功能材料
注氧隔离法(SIMOX)和体硅智能剥离法(smart-cut)是目前制备绝缘体上的硅(SOI)材料的最重要的两种方法.而离子注入是其中最主要工艺过程.本文简述了等离子体基离子注入(PBII)在制备SOI的两种方法中应用的国内外研究现状.讨论了两种方法中需要考虑的共性问题,包括注入剂量的均匀性、等离子体中离子的选择、单一能量的获得以及避免C、N、O及金属粒子的污染等.并且针对SIMOX和smart-cut各自的工艺特点,分别讨论了不同工艺参数的选择、工艺中出现的主要问题和一些已经得到的解决办法.
关键词:
SOI材料
,
PBII
,
SIMOX
,
Smart-Cut
G.Li
,
L.F.Xia
,
X.X.Ma
,
Y.Sun and Z.J.Zhan Schoolof Materials Science and Engineering
,
Harbin Institute of Technology
,
Harbin 150001
,
China
金属学报(英文版)
The bondstructureofhydrogenated diamond likecarbon( DLC) filmsdeposited with plasmabased ionimplantation ( PBII) wascharacterized by Raman spectroscopy andcore level band and valenceband spectrum of XPS. Theresultsshow thatthe hydrogenated carbon filmspre pared with lower pulse bias, especially zero bias, display polymer like feature. The DLCfilms deposited with 15 kVpulsebiascontainsthehighestdensityofsp3 bonds. Thecore lev elband ( C1s) spectra of allfilmsshifttowardlow bindingenergy after4kVAr+ ion bom barding. The valenceband spectra of hydrogenated DLCfilmsarequite differentfrom thatof diamond and graphite. However, afterion bombarding, besidetwosingle peaksatabout17 0 eVand 12 5 eV(similarto graphite) ,two new sharp peaksappearatabout21 3 eVand 8 0 eV,respectively. Thepeak at8 0 eVcan beconsidertothecontribution duetothe actingofimplanted argon on C Cbondsand C Hbondsin thefilms.
关键词:
hydrogenated DLCfilms
,
null
,
null
,
null
,
null
