Bin ZHAO
,
Kuiwei GENG
,
Fei ZENG
,
Feng PAN
材料科学技术（英文）
The Ni80Nb20 films were prepared by ion beam assisted deposition (IBAD) with various Ar+ ion energies. A phase evolution of fcc→amorphous→Ni+Nb→Ni+hcp was observed with the increasing of ion beam energy from 2 keV to 8 keV. When bombarded by Ar+ ions of 8 keV during deposition, a new crystalline phase with hcp structure was obtained, of which the lattice parameters are a=0.286 nm and c=0.483 nm, different from those of the similar A3B-type hcp phase previously reported. The experimental results were discussed in terms of thermodynamics and restricted kinetic conditions in the far-from-equilibrium process of IBAD. The formation of hcp phase may also be related to the valence electron effect.
关键词:
Hcp phase
,
null
,
null
,
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史锴
,
冯峰
,
吴蔚
,
王志
,
韩征和
低温物理学报
在钇钡铜氧(YBCO)高温超导涂层导体制备路线中,离子束辅助沉积技术(IBAD)是两大主流技术路线之一,取得了最为突出的研究成果.本文简要介绍了IBAD技术制备YBCO涂层导体的最新研究进展;并采用离子束辅助沉积技术在哈氏合金(Hastelloy)基底上成功制备了1米长具有钇稳定氧化锆(YSZ)缓冲层的金属基带.采用X射线衍仪(XRD)分析YSZ缓冲层的取向;利用原子力显微镜(AFM)和扫描电镜(FESEM)观察其表面形貌.获得了可以实际应用的IBAD-YSZ/Hastelloy缓冲层长基带,可以在该基带上研制其他缓冲层以制备YBCO高温超导涂层导体带材.
关键词:
离子束辅助沉积
,
涂层导体
,
YSZ
,
缓冲层
