李代宗
,
于卓
,
雷震霖
,
成步文
,
余金中
,
王启明
材料研究学报
doi:10.3321/j.issn:1005-3093.2000.02.020
利用超高真空化学气相淀积(UHV/CVD)系统在650℃生长出表面光亮的GeSi单晶在1200L/min分子泵与前级机械泵间串接450L/min分子泵,改善了生长环境串接分子泵后生长的样品的X射线双晶衍射分析表明,外延层衍射峰半宽仅为198arcsec,且出现了Pendellosung干涉条纹,说明外延层结晶质量很好.
关键词:
超高真空化学气相淀积
,
GeSi
,
X射线双晶衍射
Wenhua SHI
,
Lei ZHAO
,
Liping LUO
,
Qiming WANG
材料科学技术（英文）
The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction (DCXRD) pattern. It is found that the width of the 0th peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. By this method, the Ge-Si atomic interdiffusion in Ge nano-dots and wetting layers has been investigated by DCXRD. It is found that thermal annealing can activate Ge-Si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. Therefore the fluctuation of the Ge layer decreases and the distribution of Ge atoms becomes homogeneous in the horizontal Ge (GeSi actually) layer, which make the width of the 0th peak narrow after annealing.
关键词:
X-ray diffraction
,
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