R. Wang
金属学报(英文版)
This paper reports the high-energy proton irradiation effects on GaAs/Ge space solarcells. The solar cells were irradiated by protons with energy of 5-20Me V at fluenceranging from 1 × 109 to 7× 1013 cra-2, and then their electric parameters were measuredat AM0. It was shown that the Isc, Voc and Pmax degrade as the fiuence increasingrespectively, but the degradation rates of Isc, Voc and Pmax decrease as the protonenergy increasing, and the degradation is relative to proton irradiation-induced defectwith a level of Ec -0. 41eV in irradiated GaAs/Ge cells.
关键词:
GaAs/Ge solar cell. high-energy proton
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