Jianrong Xiao
材料科学技术（英文）
Copper nitride (Cu3N) films were prepared by reactive radio frequency magnetron sputtering at various nitrogen partial pressures, and the films were annealed at different temperatures. The crystal structure of the films was identified by X-ray diffraction technique. The Cu3N films have a cubic anti-ReO3 structure, and lattice constant is 0.3855 nm. With increasing nitrogen partial pressure, the Cu3N films are strongly textured with the crystal direction [100]. The atomic force microscope images show that the films presence a smooth and compact morphology with nanocrystallites of about 70 nm in size. The films were further characterized by UV-visible spectrometer, and the optical band gap of the films was calculated from the Tauc equation. The typical value of optical band gap of the films is about 1.75 eV, and it increases with increasing nitrogen partial pressure. The thermal property of the films was measured by thermogravimetry, and the decomposition temperature of the films was about 530 K.
关键词:
Cu3N films
Jianrong Xiao
材料科学技术（英文）
Copper nitride (Cu3N) films were prepared by reactive radio frequency magnetron sputtering at various nitrogen partial pressures, and the films were annealed at different temperatures. The crystal structure of the films was identified by X-ray diffraction technique. The Cu3N films have a cubic anti-ReO3 structure, and lattice constant is 0.3855 nm. With increasing nitrogen partial pressure, the Cu3N films are strongly textured with the crystal direction [100]. The atomic force microscope images show that the films presence a smooth and compact morphology with nanocrystallites of about 70 nm in size. The films were further characterized by UV-visible spectrometer, and the optical band gap of the films was calculated from the Tauc equation. The typical value of optical band gap of the films is about 1.75 eV, and it increases with increasing nitrogen partial pressure. The thermal property of the films was measured by thermogravimetry, and the decomposition temperature of the films was about 530 K.
关键词:
Cu3N films
李兴鳌
,
杨建平
,
左安友
,
高雁军
,
袁作彬
,
任山令
,
李永涛
材料导报
采用反应直流磁控溅射镀膜法,在氮气分压为0.9Pa、不同基底温度下、玻璃基底上制备了纳米多晶Cu_3N薄膜,并研究了基底温度对薄膜结构和性能的影响.结果表明,当基底温度为100℃及以下时,薄膜以[111]方向择优生长为主;在150℃及200℃时,薄膜以[100]方向择优生长为主;250℃时开始出现Cu的[111]方向生长,300℃时已完全不能形成Cu_3N晶体,只有明显的Cu晶体.随基底温度的升高,薄膜的沉积速率在13～28nm/min呈U型变化,低温和高温时较高,150℃时最低;薄膜的电阻率显著降低;薄膜的显微硬度先升后降,100℃时显微硬度最大.
关键词:
氮化铜薄膜
,
直流磁控溅射
,
基底温度
,
热稳定性
