F.P. Wang
,
P. Wu
,
L.Q. Pan
金属学报(英文版)
Cu films with thickness of about 500nm were deposited on glass substrates without heat-ing by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers weremaintained at 390V× 0.27A, 430V× 0. 70A and 450V× 1.04A, and the correspondingdeposition rates of Cu film reached 35nm/min, 104nm/min and 167nm/min. X-raydiffraction, scanning electron microscopy and atomic force microscopy were used toobserve the structural characteristics of the films. The resistance of the films was mea-sured using four-point probe technique. The amount of larger grains increases and theresistivity of the films decreases evidently with an increase in sputtering power. It isconsidered that the increase in deposition rate with sputtering power mainly weakensthe influence of residual gas atoms on the growing film, and increases substrate andgas temperatures, resulting in the increase in grain size and the decrease in resistivityof the Cu film.
关键词:
Cu film
,
null
,
null
,
null
,
null
P.Wu
,
F.P.Wang
,
L.Q.Pan
金属学报(英文版)
Cu films with thickness of 630-1300nm were deposited on glass substrates withoutheating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the targetcurrent increased from 200 to 1150mA with Ar pressure increasing. X-ray diffrac-tion, scanning electron microscopy and atomic force microscopy were used to observethe structural characterization of the films. The resistivity of the films was measuredusing four-point probe technique. At all the Ar pressures, the Cu films have mixturecrystalline orientations of [111], [200] and [220] in the direction of the film growth.The film deposited at lower pressure shows more [111] orientation while that depositedat higher pressure has more [220] orientation. The amount of larger grains in the filmprepared at 0.5Pa Ar pressure is slightly less than that prepared at 1. 0Pa and 1.5PaAr pressures. The resistivities of the films prepared at three different Ar pressures rep-resent few differences, about 3-4 times of that of bulk material. Besides the depositionrate increases with Ar pressure because of the increase in target current. The contri-bution of the bombardment of energetic reflected Argon atoms to these phenomena isdiscussed.
关键词:
Cu film
,
null
,
null
,
null
Christina Scheu
,
Min Gao
,
Manfred Rühle
材料科学技术（英文）
The bonding and electronic structure of Cu/(0001)Al2O3 and Cu/(1120)Al2O3 interfaces has been studied experimentally using spatially-resolved transmission electron energy loss spectroscopy. The specimen were prepared by depositing Cu on single-crystal a-Al2O3 substrates, which have been Ar+-ion sputter-cleaned prior to the growth of Cu. For both orientations of the a-Al2O3 substrate, atomically abrupt interfaces formed as determined by high-resolution transmission electron microscopy. The investigations of the interfacial Cu-L2,3, Al-L2,3 and O-K energy loss near-edge structures, which are proportional to the site- and angular-momentum-projected unoccupied density of states above the Fermi level, indicate the existence of metallic Cu-Al bonds at the Cu/Al2O3 interface independent of the substrate orientation.
关键词:
Electronic structure
,
null
,
null
,
null
孙杰
,
高斐
,
权乃承
,
晏春愉
,
张佳雯
,
郝培风
,
刘立慧
材料科学与工程学报
通过热蒸镀Cu膜并在空气中退火制备Cu_2O薄膜,利用X射线衍射(XRD)、能量分散X射线谱(EDX)和原子力显微镜(AFM)研究了已沉积和不同温度退火薄膜的晶体结构、成份和表面形貌.结果表明,Cu膜在200℃退火30分钟可以得到具有单一成份的Cu_2O薄膜.四探针测量得到所制备魄Cu_2O薄膜电阻率为0.22Ωcm.用紫外可见光分光光度计(Uv-vis)研究了Cu_2O薄膜的光学特性,得出其光学带隙为2.4eV.
关键词:
Cu_2O薄膜
,
热蒸镀
,
Cu膜
,
退火
杨吉军
,
马飞
,
徐可为
金属学报
用磁控溅射工艺分别在Si和Al2O3衬底上沉积两种不同织构组分的多晶柱状Cu膜, 基于动力学标度方法表征两种薄膜的表面粗化特征. 结果表明, Cu(111)取向晶粒组分多的薄膜的生长指数较大、表面粗化速率较快. 对于较低温度下沉积的多晶柱状薄膜, 基于其晶粒几何形态和弱化的晶界限制的特点, 提出了一种表面粗化机制, 认为薄膜的表面粗化主要依赖于其晶粒表面的粗化过程, 而薄膜织构决定了薄膜表面粗化速率.
关键词:
Cu膜
,
surface roughening
,
texture
,
dynamic scaling
张人佶
,
王望弟
,
何大韧
金属学报
远离平衡生长的Cu/a-C∶H双层膜具有网络分形的结构。在本实验条件下,测量出它的分维数D_f≈1.83。在TEM中对该双层膜进行缓慢加热的原位动态观察,发现原有的网络结构在535℃时完全遭到破坏,同时随着Cu膜的退火缩聚,逐渐出现随机分布的缩聚区,此区的分维值随着退火温度的上升而下降,最后在850℃时变为D_f=1.63。利用金属原子的表面与界面扩散模型,可以解释这种结构特征的变化。
关键词:
Cu膜
,
fractal
,
annealing-induced aggregation
覃
,
明
,
嵇宁
,
李家宝
,
马素媛
,
陈昌荣
,
宋忠孝
,
何家文
金属学报
利用X射线拉伸实验研究了具有二维残余应力的Cu附着膜的屈服强度与退火温度的关系. 结果表明, Cu附着膜的条件屈服点随着退火温度的增高而减小, 退火温度在150---300 ℃间变化时, 减小幅度最大, 出现明显的拐点.这主要由于Cu附着膜在该温度范围内发生了再结晶, 使得原有的大部分组织结构强化因素消失了. Cu附着膜的屈服强度远远高于块体Cu材的屈服强度.
关键词:
Cu膜
,
biaxial stress
,
yield strength
