材料期刊网

Microstructure and Ferroelectric Properties of (Bi_0:9 Ho_0:1)_3:999Ti_2:997V_0:003O₁₂ Thin Films Prepared by Sol-gel Method for Nonvolatile Memory

Chengju Fu Zhixiong Huang Jie Li Dongyun Guo

材料科学技术（英文）

The (Bi_0.9Ho_0.1)_3.999Ti _2.997 V_0.003O₁₂ (BHTV) films have been prepared on Pt/Ti/SiO₂/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho³⁺/V⁵⁺ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6°C/cm², 2Ec of 265 kV/cm (at applied field of 420 kV/cm), dielectric constant of 305, dielectric loss of 0.031 (at 1 MHz), good insulting behavior, as well as the fatigue-free behavior.

关键词: (Bi_0.9Ho_0.1)_3.999Ti _2.997 V_0.003O₁₂ thin films , Sol-gel method , co-substitution , ferroelectric properties , dielectric properties