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ITO Films Prepared by Long-throw Magnetron Sputtering without Oxygen Partial Pressure

Miaoju Chuang

材料科学技术(英文)

This study investigates the influence of the radio frequency (rf) power and working pressure on the properties of indium tin oxide (ITO) thin films, which were prepared by long-throw rf magnetron sputtering technique at room temperature. For 200 nm thick ITO films grown at room temperature in pure argon pressure of 0.27 Pa and sputtering power of 40 W, sheet resistant was 26.6 Ω/sq, and transmittance was higher than 90% (at wavelength 500 nm). An X-ray diffraction analysis of the samples deposited at room temperature reveal a structural change from amorphous to mixed amorphous/polycrystalline structure at (222) and (400) texture with increasing rf power. The surface composition of ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1s XPS spectra

关键词: Indium tin oxide (ITO) , rf magnetron sputtering , X-ray photoelectron spectroscopy , X-ray diffraction

Mn掺杂对ZnO薄膜结构和光学性质的影响

孙柏 , 赵朝阳 , 徐彭寿 , 张国斌 , 韦世强

无机材料学报 doi:10.3724/SP.J.1077.2007.00911

利用脉冲激光淀积的方法在Si衬底上生长出了$c$轴高度取向的ZnO和Zn0.9Mn0.1O薄膜. 光致发光结果显示了Mn的掺杂引起了薄膜的带边发射蓝移, 强度减弱, 紫光发射几乎消失, 但绿光发射增强. 利用X射线衍射, X射线吸收精细结构和X射线光电子能谱等实验技术对Mn掺杂的ZnO薄膜的结构及其对光学性质影响进行了研究. 结果表明: Mn掺入到ZnO薄膜中形成了Zn0.9Mn0.1O合金薄膜, Mn以+2价的价态存在, 这就导致了掺Mn以后的薄膜带隙变大, 在发光谱中表现为带边发射的蓝移. 同时由于掺入的Mn与薄膜中的填隙Zn反应, 导致薄膜的结晶性变差,薄膜中的填隙Zn减少, O空位增多, 引起带边发射和紫光发射减弱, 绿光发射增强.

关键词: ZnO , pulsed laser deposition , X-ray absorption fine structure , X-ray photoelectron spectroscopy , photoluminescence

阴极弧离子镀AlCrN涂层高温氧化后XPS分析

付贵忠 , 孔德军 , 王文昌 , 张垒

材料热处理学报

采用阴极弧离子镀方法在TiC基金属陶瓷刀具表面沉积了AlCrN涂层,进行了900℃下2h高温氧化试验.通过SEM、EDS、XRD、XPS等手段分析了AlCrN涂层高温氧化前后表面形貌、元素组成、物相组成及元素结合能,并讨论了AlCrN涂层高温氧化及失效机理.结果表明,氧化前AlCrN涂层由AlN、CrN和Cr2N物相组成,其中CrN表现出(200)的择优取向,氧化后其物相转变为抗高温的Al2O3、Cr3O4和Ti4O3氧化物;氧化前AlCrN涂层中Al和N以Al-N键、Cr和N以Cr-N键存在,氧化后Al与O以Al-O键、Cr与O以Cr-O键方式存在,在涂层-基体结合界面处形成了致密的扩散层.

关键词: 阴极弧离子镀 , AlCrN涂层 , 高温氧化 , 物相组成 , 光电子能谱分析

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