{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"本文利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同生工艺条件下的InxGa-xN薄膜的制备,并通过XRD、SEM、AFM等测量分析方法系统研究了生长工艺参数对InxGa1-xN薄膜的组分和性质的影响.InxGa1-xN薄膜的制备包括蓝宝石衬底表面上GaN缓冲层的生长以及缓冲层上InxGa1-xN薄膜的沉积两个过程.通过对所制备InxGa1-xN薄膜的XRD、SEM、AFM分析发现,调节生长温度和TMGa的流量可以有效控制InxGa1-xN薄膜中In的组分,并且随着生长温度的升高,InxGa1-xN薄膜的表面缺陷减少.","authors":[{"authorName":"李亮","id":"dbaec0fd-1f2d-44ad-a5fa-c204f64c2fd0","originalAuthorName":"李亮"},{"authorName":"张荣","id":"25a9013d-3b01-42ce-9ee2-687393bdb810","originalAuthorName":"张荣"},{"authorName":"谢自力","id":"eaf90345-49aa-4bf2-86fd-c7771083d0aa","originalAuthorName":"谢自力"},{"authorName":"张禹","id":"b22a80d4-7dfe-4e5f-bbe3-e238fe905188","originalAuthorName":"张禹"},{"authorName":"修向前","id":"1257b25a-bd38-4b7d-8be4-ec328b191bc4","originalAuthorName":"修向前"},{"authorName":"刘成祥","id":"6004d2be-1e9f-4532-b28d-ad4fb911f603","originalAuthorName":"刘成祥"},{"authorName":"毕朝霞","id":"942d007e-130a-498d-85be-5463bc94f085","originalAuthorName":"毕朝霞"},{"authorName":"陈琳","id":"a0926793-3759-4a85-977e-2024888deb73","originalAuthorName":"陈琳"},{"authorName":"<span style=\"color:red\">刘斌</span>","id":"67fe8625-685f-4562-9137-49721ac4f33e","originalAuthorName":"刘斌"},{"authorName":"俞慧强","id":"33a9fda9-7c21-4eaf-b6d0-b62f3cb75cc2","originalAuthorName":"俞慧强"},{"authorName":"韩平","id":"5bc30e59-ded8-41c9-affb-e415bf2b3883","originalAuthorName":"韩平"},{"authorName":"顾书林","id":"cee4c45e-9c42-40d9-8dd2-54aba3d97e04","originalAuthorName":"顾书林"},{"authorName":"施毅","id":"9a6e5c91-3ea8-47e6-ae67-5f9ef8f25f6b","originalAuthorName":"施毅"},{"authorName":"郑有炓","id":"b7942b88-dca3-401c-9c30-bf1524a1f8cb","originalAuthorName":"郑有炓"}],"doi":"10.3969/j.issn.1000-985X.2005.06.028","fpage":"1118","id":"010bf383-729d-4ad3-8c85-1ed90747b0b6","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"3a211f85-3b50-4c4f-9551-5d4c895ca094","keyword":"MOCVD","originalKeyword":"MOCVD"},{"id":"ceaec07e-6c8b-4c2f-be29-e965c6d12fd3","keyword":"InxGa1-xN","originalKeyword":"InxGa1-xN"},{"id":"e3c46f08-5370-497d-aa8f-5b82ee7c3e1d","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"a4958acd-12ed-4afb-893e-43f16af7d2d5","keyword":"缓冲层","originalKeyword":"缓冲层"}],"language":"zh","publisherId":"rgjtxb98200506028","title":"MOCVD生长InxGa1-Xn薄膜的表征","volume":"34","year":"2005"},{"abstractinfo":"利用低压金属有机化学气相淀积(LP-MOCVD)系统,在(0001)蓝宝石衬底上采用预淀积In纳米点技术低温合成制备了立方相的InN薄膜.首先以TMIn作源在蓝宝石衬底表面预淀积了一层金属In纳米点,然后在一定条件下合成生长InN薄膜.X射线衍射谱(XRD)和X射线光电子发射谱(XPS)显示适当的预淀积In不仅能够促进InN的生长,同时还能够抑制金属In在InN薄膜中的聚集.原子力显微镜(AFM)观察表明,金属In纳米点不仅增强了成核密度,而且促进了InN岛的兼并.自由能计算表明预淀积的In优先和NH3分解得到的NH与N基反应生成InN.我们认为这种优先生成的InN为接下来InN的生长提供了成核位,从而促进了InN的生长.","authors":[{"authorName":"谢自力","id":"a5bade18-1f8d-475a-8046-7e73c86d212d","originalAuthorName":"谢自力"},{"authorName":"张荣","id":"c16ba4b3-e700-43f7-8df7-5a81a510e491","originalAuthorName":"张荣"},{"authorName":"修向前","id":"eb7276a4-9e7f-4cef-a866-c23330d8a723","originalAuthorName":"修向前"},{"authorName":"毕朝霞","id":"5273b1d5-2beb-4a1f-83b9-3a3a0ce2dd59","originalAuthorName":"毕朝霞"},{"authorName":"<span style=\"color:red\">刘斌</span>","id":"5a2e255a-6b1e-4846-a42f-46cf583d4bb5","originalAuthorName":"刘斌"},{"authorName":"濮林","id":"e745ce1d-4407-4a63-9f79-a7777dc9cf4b","originalAuthorName":"濮林"},{"authorName":"陈敦军","id":"57719d36-e5e8-43a9-bdc4-b6a93f90de0b","originalAuthorName":"陈敦军"},{"authorName":"韩平","id":"7aa2445d-29be-4837-95ef-f168595856ce","originalAuthorName":"韩平"},{"authorName":"顾书林","id":"a60820bf-aeb1-47c8-ae84-db5561c637a4","originalAuthorName":"顾书林"},{"authorName":"江若琏","id":"c73a985e-49bc-4203-8f84-9418e8b403a0","originalAuthorName":"江若琏"},{"authorName":"朱顺明","id":"9e1c3874-0846-4165-b7b6-465548cbaf36","originalAuthorName":"朱顺明"},{"authorName":"赵红","id":"4f46355b-0200-409d-9dad-91a18f8366b2","originalAuthorName":"赵红"},{"authorName":"施毅","id":"f8f5b9e0-4990-4047-a8c3-13ad2808eef0","originalAuthorName":"施毅"},{"authorName":"郑有炓","id":"54024dd7-fe6d-4075-9d10-993cdac21cff","originalAuthorName":"郑有炓"}],"doi":"10.3969/j.issn.1000-985X.2005.06.014","fpage":"1050","id":"e4b9afd3-0c88-4e33-b29f-b01cd94baedc","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"15be2dbf-424d-4fc9-a1ba-30e6fe9e05c7","keyword":"InN","originalKeyword":"InN"},{"id":"0906a04f-7c5a-4bd3-ab30-0c0310752273","keyword":"预淀积In纳米点","originalKeyword":"预淀积In纳米点"},{"id":"5f3e7fd2-0537-42d7-9a71-4bcdb0eabe14","keyword":"MOCVD","originalKeyword":"MOCVD"}],"language":"zh","publisherId":"rgjtxb98200506014","title":"在MOCVD系统中用预淀积In纳米点低温下合成生长InN","volume":"34","year":"2005"},{"abstractinfo":"研究了在草酸、磷酸不同电压条件下,阳极氧化铝(AAO)的孔结构特点.在较高电压下(60～120V),孔发生倾斜,并随电压的增大而加剧.通过建立与阻挡层/金属界面的应力有关的流模型对这一现象进行解释,并发现孔倾斜是AAO从无序到有序的一个自组织的现象.","authors":[{"authorName":"于治国","id":"a0c037fd-f0e0-4ae6-8570-fa51f12e39c7","originalAuthorName":"于治国"},{"authorName":"刘荣海","id":"df4366d2-da5d-4b5f-9f35-e17e7e852993","originalAuthorName":"刘荣海"},{"authorName":"周建军","id":"da2bd3ba-05d3-41ae-9185-185162ed1846","originalAuthorName":"周建军"},{"authorName":"赵红","id":"e877eb33-db69-4382-a385-97c99e5d46ae","originalAuthorName":"赵红"},{"authorName":"华雪梅","id":"503d0ca6-cd10-4adb-b9f4-73f2b2a803e1","originalAuthorName":"华雪梅"},{"authorName":"<span style=\"color:red\">刘斌</span>","id":"bdbf4417-6400-498e-9422-0d610f2824ce","originalAuthorName":"刘斌"},{"authorName":"谢自力","id":"a13724de-63b2-499e-859b-0dd2bc7358cc","originalAuthorName":"谢自力"},{"authorName":"修向前","id":"6450ea24-c64e-48ce-8dcd-19535b1582ce","originalAuthorName":"修向前"},{"authorName":"宋雪云","id":"067bef19-c711-44ee-878c-50881401b4d5","originalAuthorName":"宋雪云"},{"authorName":"陈鹏","id":"1100c68c-78e7-47c8-87e7-4d27b31d4d01","originalAuthorName":"陈鹏"},{"authorName":"韩平","id":"1f7164c2-7471-45bc-867b-158d62a2908f","originalAuthorName":"韩平"},{"authorName":"张荣","id":"9b6e2a24-307e-427e-b365-c605343fa7c7","originalAuthorName":"张荣"},{"authorName":"郑有炓","id":"f19c7fde-a65b-467e-ae07-ee94f0d0d0ef","originalAuthorName":"郑有炓"}],"doi":"","fpage":"1302","id":"f4becdbc-5800-4932-aae9-0d245465f432","issue":"8","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"7406b5f2-03ec-490f-8525-136415e7e09e","keyword":"阳极多孔氧化铝","originalKeyword":"阳极多孔氧化铝"},{"id":"b54495f7-7eee-4275-a182-1da9bd1662eb","keyword":"斜孔","originalKeyword":"斜孔"},{"id":"27e09975-8e91-4a7b-83f1-b65f2d3154bf","keyword":"应力","originalKeyword":"应力"},{"id":"87c1181c-7736-4edc-8b8f-2d35661842f4","keyword":"流模型","originalKeyword":"流模型"}],"language":"zh","publisherId":"gncl201008002","title":"阳极多孔氧化铝的斜孔形成过程及机理","volume":"41","year":"2010"},{"abstractinfo":"探讨了正常皮肤对重离子辐照急性损伤反应的耐受性,为重离子治癌临床应用提供安全性检测的实验依据.实验前10min,实验猪肌肉注射复方氯胺酮1.2mg/kg进行麻醉,然后在兰州重离子研究装置(HIRFL)辐照终端利用12C6+束照射,辐照剂量分别为0,12,21和27Gy,辐照分3次完成,剂量率约为1.2Gy/min,Bragg峰区照射,辐照后每隔7d对照射野拍照并活检取样,做HE组织病理学观察.不同剂量12C6+离子束辐照实验猪皮肤后,皮肤外观反应随辐照剂量增大而加快,表现为肿胀和色素沉积等;皮肤组织结构的变化明显,上皮细胞排列紊乱、萎缩、空泡变性;基本恢复正常所需时间也越长,且都存在明显的剂量效应关系.结果表明,辐照剂量范围为0-27Gy时,重离子对正常皮肤的辐照是安全的.","authors":[{"authorName":"武振华","id":"a85e49c8-7a14-4ddc-9ab0-e467645413dc","originalAuthorName":"武振华"},{"authorName":"张红","id":"c63964a1-e65b-4f12-be54-669b7496355d","originalAuthorName":"张红"},{"authorName":"杨荣","id":"7e8771ab-ddc9-40e5-aead-350f8be3cfee","originalAuthorName":"杨荣"},{"authorName":"王小虎","id":"b431354f-dfa1-41ef-8add-cb79f05fe1ab","originalAuthorName":"王小虎"},{"authorName":"<span style=\"color:red\">刘斌</span>","id":"04a95879-ab99-456d-9ac8-d3933edab371","originalAuthorName":"刘斌"},{"authorName":"张保平","id":"31611cc6-6ef5-4763-891e-78dac66e6074","originalAuthorName":"张保平"},{"authorName":"赵卫平","id":"409dddf2-22de-43d2-80cd-795feccdb8c9","originalAuthorName":"赵卫平"},{"authorName":"刘新国","id":"6409ca6d-b163-4fed-826b-6ee5233543d6","originalAuthorName":"刘新国"},{"authorName":"马晓飞","id":"f59b95d5-50c3-41d0-9b84-0c4578216102","originalAuthorName":"马晓飞"},{"authorName":"刘玮","id":"2efb1040-7c63-4798-a96f-720ce5f42370","originalAuthorName":"刘玮"},{"authorName":"张录卫","id":"03e3462f-dcc6-4fd6-ae0e-6e86466f9d4e","originalAuthorName":"张录卫"},{"authorName":"顾怀安","id":"d9d0d6b6-843f-4dda-b94f-6bddf33a1476","originalAuthorName":"顾怀安"}],"doi":"","fpage":"109","id":"cdfee18a-06c1-401f-a265-35240a6b287e","issue":"1","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论   "},"keywords":[{"id":"1001d526-4c67-47b2-9866-8b28110e6b9e","keyword":"12C6+离子束","originalKeyword":"12C6+离子束"},{"id":"70a104bc-609e-4b05-a217-14235ecf581c","keyword":"辐照剂量","originalKeyword":"辐照剂量"},{"id":"49d90de3-b220-4d09-8b0a-e7efad8a1bfd","keyword":"皮肤","originalKeyword":"皮肤"},{"id":"66b38ba3-1b3d-4fda-b207-fdc18fa7ccad","keyword":"猪","originalKeyword":"猪"},{"id":"dab65036-16b2-4e21-9fbc-eef03de249d9","keyword":"组织病理学","originalKeyword":"组织病理学"}],"language":"zh","publisherId":"yzhwlpl201101017","title":"12C6+束辐照引起的实验猪皮肤急性损伤反应的研究","volume":"28","year":"2011"},{"abstractinfo":"应用高分辨X射线衍射技术研究了MOCVD在宝石衬底上生长的InGaN/GaN多量子阱结构.测量(105)非对称面的倒易空间图获得量子阱结构的应变状态.由(002)面三轴衍射0级卫星峰峰位结合应变状况计算获得InGaN层中In含量,从(002)面的ω/2θ衍射谱以及小角反射谱获得多量子阱的一个周期的厚度,GaN层和InGaN层的厚度比.最后通过X射线动力学拟合的方法从(002)面的ω/2θ三轴衍射谱获得In的精确含量是25.5%,InGaN势阱层的精确厚度是1.67nm,GaN阻挡层的精确厚度是22.80nm.","authors":[{"authorName":"李弋","id":"2c7d7e09-b339-4e60-8fd4-123c8c4056e2","originalAuthorName":"李弋"},{"authorName":"<span style=\"color:red\">刘斌</span>","id":"527924f5-4d5b-49c1-9251-766307f6474f","originalAuthorName":"刘斌"},{"authorName":"谢自力","id":"8b302b9b-f149-4103-a70d-7b915126f21c","originalAuthorName":"谢自力"},{"authorName":"张荣","id":"cfd12c72-fbfb-46c5-a9ae-d840216e5db6","originalAuthorName":"张荣"},{"authorName":"修向前","id":"94e91c15-50d5-4d10-b1a1-71987021a5d9","originalAuthorName":"修向前"},{"authorName":"江若琏","id":"24c686f3-d90f-43b5-bdca-cc9c30c081d1","originalAuthorName":"江若琏"},{"authorName":"韩平","id":"3ceab1b1-b9f9-4015-82ab-530482e707da","originalAuthorName":"韩平"},{"authorName":"顾书林","id":"19ec0458-29cd-4a9a-a52e-912664f991c5","originalAuthorName":"顾书林"},{"authorName":"施毅","id":"7faa8d3b-9f69-4b46-bbf5-ab57b607a0a5","originalAuthorName":"施毅"},{"authorName":"郑有炓","id":"2b886c42-8ba0-4dd2-8a1c-5374741a55f5","originalAuthorName":"郑有炓"}],"doi":"","fpage":"1259","id":"123f21a5-a2f2-46d8-ae83-830516d5676b","issue":"8","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"252f181b-02fd-47e2-a86d-7703dac62cdc","keyword":"InGaN/GaN","originalKeyword":"InGaN/GaN"},{"id":"b2cec121-0246-40d8-a0f6-e446cdf0e0aa","keyword":"多量子阱","originalKeyword":"多量子阱"},{"id":"4895a445-2b18-4f1e-8525-2da324dfb970","keyword":"In组分","originalKeyword":"In组分"},{"id":"a9593df6-d4b2-4e3a-988b-54c548a1f81c","keyword":"X射线衍射","originalKeyword":"X射线衍射"}],"language":"zh","publisherId":"gncl200808007","title":"高分辨率X射线衍射研究InGaN/GaN多量子阱结构In组分及厚度","volume":"39","year":"2008"},{"abstractinfo":"以双介孔分布MCM-41分子筛为载体,采用等体积浸渍、氨水气相诱导水解和过量浸渍法制备了费-托合成钴摹催化剂,并考察了它们的孔结构、活性物种分布及费-托合成催化性能.结粜表明,采用等体积浸渍法和氨水气相诱导水解法制备的催化剂都保持了较好的双介孔特性,Co颗粒人部分位于分子筛的孔道内部.过量浸渍法和等体积浸渍法制备的催化剂上Co物种的还原度和分散度均较高,尤其后者上Co分散度更高,因而具有较低的CH4选择性和较高的C5+选择性.","authors":[{"authorName":"王俊刚","id":"71d84701-3545-4ff7-8a8e-011ef9a18dec","originalAuthorName":"王俊刚"},{"authorName":"李德宝","id":"0825100f-cd55-4d54-9ab8-76caf4469fa7","originalAuthorName":"李德宝"},{"authorName":"侯博","id":"13905d8d-0b8e-4aba-baec-e2b62064dc84","originalAuthorName":"侯博"},{"authorName":"贾丽涛","id":"68f91caf-ba28-4b9d-b00b-f9ad525988b4","originalAuthorName":"贾丽涛"},{"authorName":"贾利宏","id":"bec48a98-3e6c-4ed2-96e1-6fce4008835b","originalAuthorName":"贾利宏"},{"authorName":"孙志强","id":"1d909348-c7a3-4105-8dac-bcb6cc358b91","originalAuthorName":"孙志强"},{"authorName":"<span style=\"color:red\">刘斌</span>","id":"0626f1ca-4802-4160-963a-ee78160753b9","originalAuthorName":"刘斌"},{"authorName":"郭金刚","id":"8be9c970-3d1f-46d3-8cd9-026e0ac58fce","originalAuthorName":"郭金刚"},{"authorName":"任润厚","id":"f53dd29d-31e1-45e3-acce-9cfd793a847a","originalAuthorName":"任润厚"},{"authorName":"孙予罕","id":"d87f8d18-7837-4ebe-b641-bcf8e8248042","originalAuthorName":"孙予罕"}],"doi":"10.3724/SP.J.1088.2011.01003","fpage":"368","id":"80cdeaf9-b226-44b2-9299-504810d57984","issue":"2","journal":{"abbrevTitle":"CHXB","coverImgSrc":"journal/img/cover/CHXB.jpg","id":"18","issnPpub":"0253-9837","publisherId":"CHXB","title":"催化学报   "},"keywords":[{"id":"39914884-cdba-4fed-8551-e9c1f48790f8","keyword":"双介孔","originalKeyword":"双介孔"},{"id":"eae489e9-7f65-4690-8da3-d39c4a28ddc4","keyword":"MCM-41分子筛","originalKeyword":"MCM-41分子筛"},{"id":"d6bc6b94-8bc3-4d1e-b216-467c999f3e1a","keyword":"制备方法","originalKeyword":"制备方法"},{"id":"18b1c680-5066-4bd3-a7f4-780504f36f1c","keyword":"钻基催化剂","originalKeyword":"钻基催化剂"},{"id":"8ece0119-b193-4578-9e8b-4b0325be2f8f","keyword":"费-托合成","originalKeyword":"费-托合成"}],"language":"zh","publisherId":"cuihuaxb201102026","title":"制备方法对双介孔钴基催化剂结构及其费-托反应性能的影响","volume":"32","year":"2011"},{"abstractinfo":"用MOCVD 技术在(0001)蓝宝石衬底上成功研制了2寸衬底上无裂纹的AlN/Al0.3Ga0.7N超晶格材料.研究了AlxGa1-xN/AlN超晶格材料特性. 结果表明,缓冲层材料和结构对AlN/Al0.3Ga0.7N超晶格的表面型貌和界面特性有很大的影响.AFM研究表明利用GaN做支撑层生长的AlN/Al0.3Ga0.7N超晶格材料是一种准二维生长模式.XRD和SEM研究表明研制的材料表面平整、界面清晰、并且材料具有完整的周期重复性.利用紫外-可见光谱仪反射谱研究表明研制的30对AlN/Al0.3Ga0.7N超晶格材料在中心波长为313nm的紫外波段具有93.5%的反射率.","authors":[{"authorName":"谢自力","id":"aaf16571-396b-42de-ab3e-d8b7b8aee4ba","originalAuthorName":"谢自力"},{"authorName":"张荣","id":"9ff1d018-c362-44a5-8f60-b929cba1802d","originalAuthorName":"张荣"},{"authorName":"江若琏","id":"a734f0ba-0d86-4d23-b123-892382297b2f","originalAuthorName":"江若琏"},{"authorName":"<span style=\"color:red\">刘斌</span>","id":"3f5d891d-4e16-4620-be64-51e0860047d3","originalAuthorName":"刘斌"},{"authorName":"龚海梅","id":"ac921ae7-8f8f-49fa-b548-f043300661df","originalAuthorName":"龚海梅"},{"authorName":"赵红","id":"197ef4a7-17fc-4dc5-9dd1-01696ebae726","originalAuthorName":"赵红"},{"authorName":"修向前","id":"6f008761-48c1-4eb8-86b9-ad0decb8a4d4","originalAuthorName":"修向前"},{"authorName":"韩平","id":"94879438-b5b4-40a4-bb8e-69dc90948048","originalAuthorName":"韩平"},{"authorName":"施毅","id":"bb2c1171-fabe-4fab-93eb-078a17fee186","originalAuthorName":"施毅"},{"authorName":"郑有炓","id":"3a2a490c-8799-431d-bf0d-d6f1a6a0a6e6","originalAuthorName":"郑有炓"}],"doi":"","fpage":"727","id":"948a9d27-9d12-4ea9-80e0-9bef8a70b076","issue":"5","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"55d862b7-ad09-4e7d-87b3-e6d3d1a40484","keyword":"MOCVD","originalKeyword":"MOCVD"},{"id":"c4fe6385-d105-4574-9e95-0de5af25ae7e","keyword":"超晶格","originalKeyword":"超晶格"},{"id":"b8f57d01-9b84-4bfa-8073-8e2dd5fec5ec","keyword":"AlxGa1-xN/AlN","originalKeyword":"AlxGa1-xN/AlN"}],"language":"zh","publisherId":"gncl200805007","title":"AlxGa1-xN/AlN超晶格材料特性研究","volume":"39","year":"2008"},{"abstractinfo":"本文报道了在GaN/蓝宝石作衬底生长Ge薄膜材料的外延生长及其特性研究。研究了不同外延生长条件。结果表明,使用低压化学气相外延技术在GaN/蓝宝石衬底复合衬底上可以生长Ge薄膜。高分辨X射线衍射谱研究得到了峰位分别位于2θ=27.3°、2θ=45.3°和2θ=52.9°的Ge峰.原子力显微镜研究表明得到的Ge薄膜的表面粗糙度为43.4nm。扫描电子显微镜研究表明生长的Ge/GaN/蓝宝石具有清晰的层界,表面Ge晶粒致密并且分布均匀。Raman谱表明所生长的Ge的TO声子峰位于299.6cm-1,这表明了生长的Ge薄膜具有良好的质量。","authors":[{"authorName":"谢自力","id":"a2dbc5f9-7c50-4c6e-90eb-b7a072854f03","originalAuthorName":"谢自力"},{"authorName":"韩平","id":"29dcbf90-d610-47bc-accc-dc6b92df274d","originalAuthorName":"韩平"},{"authorName":"张荣","id":"fad06934-2b0d-433b-a3c7-b1b2596c8097","originalAuthorName":"张荣"},{"authorName":"曹亮","id":"be88823f-b359-4b55-a28e-13b578d284d2","originalAuthorName":"曹亮"},{"authorName":"<span style=\"color:red\">刘斌</span>","id":"37bb4f8b-d8e9-467d-8bc8-b376b42195f4","originalAuthorName":"刘斌"},{"authorName":"修向前","id":"3c4b2b65-4019-4121-80f4-f82cccc965e5","originalAuthorName":"修向前"},{"authorName":"华雪梅","id":"b19cd901-4588-48cd-8fbe-3fe809ee9cdd","originalAuthorName":"华雪梅"},{"authorName":"赵红","id":"ca0275e5-a5ab-4f71-a19f-260be8da535f","originalAuthorName":"赵红"},{"authorName":"郑有蚪","id":"93a13ef0-8cce-47f3-b6af-fca4e457c05a","originalAuthorName":"郑有蚪"}],"doi":"","fpage":"655","id":"92a1c0e4-7025-4140-9b49-a63cb2da1d36","issue":"5","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"0d4fadff-b14d-4b39-9333-516ae781e1da","keyword":"Ge","originalKeyword":"Ge"},{"id":"e6595fd7-246e-464a-8aee-2d4380ad0763","keyword":"GaN","originalKeyword":"GaN"},{"id":"5641d982-b355-44db-a453-32c1da88450f","keyword":"衬底","originalKeyword":"衬底"},{"id":"e70e4be2-ac23-430b-8437-cba3c4276446","keyword":"低压化学气相沉积","originalKeyword":"低压化学气相沉积"}],"language":"zh","publisherId":"clkxygc201105001","title":"LPCVD法在GaN上生长Ge薄膜及其特性","volume":"29","year":"2011"},{"abstractinfo":"根据30万t乙烯工程\"橡胶”装置中生产工艺控制的实际需要,研究了在线分析己烷中痕量四氢呋喃的气相色谱柱系统.使用自制的7μm特厚膜甲基硅氧烷大孔径弹性石英毛细管柱,通过试验不同条件下色谱柱的分离特性及研究组分在柱内的运动轨迹,给出了总的柱切换时间程序.在上述基础上,完成了正己烷、环己烷中10-6(体积分数)级的四氢呋喃分析.现场应用一年多的实践表明,所研制的柱系统从分析时间、运行稳定性、定量准确性(相对标准偏差小于5%)等方面均满足工艺控制的要求.","authors":[{"authorName":"路鑫","id":"0af0ad50-a1be-4004-aa26-20a55d78793a","originalAuthorName":"路鑫"},{"authorName":"吴浩","id":"ad102fa9-ee9f-4fda-b2a1-0f8474fe9e8c","originalAuthorName":"吴浩"},{"authorName":"许国旺","id":"9777875f-24e7-494c-887d-d4a3c8cbdff1","originalAuthorName":"许国旺"},{"authorName":"管爱民","id":"047808ca-cd45-4391-9217-b9a509e0a89d","originalAuthorName":"管爱民"},{"authorName":"赵欣捷","id":"51cd5e16-c8df-44aa-8663-341ba1cce33a","originalAuthorName":"赵欣捷"},{"authorName":"宋怡静","id":"10e736d2-189c-4ee1-ae01-586865e28916","originalAuthorName":"宋怡静"},{"authorName":"张桐枫","id":"43c8a15e-2911-43d8-8091-be2808acfd79","originalAuthorName":"张桐枫"},{"authorName":"<span style=\"color:red\">刘斌</span>","id":"9365da90-b83c-4b7a-adf1-d29d643e9131","originalAuthorName":"刘斌"}],"doi":"10.3321/j.issn:1000-8713.2001.03.002","fpage":"196","id":"0e2b4a37-146f-4cc3-9f24-d19169b13805","issue":"3","journal":{"abbrevTitle":"SP","coverImgSrc":"journal/img/cover/SP.jpg","id":"58","issnPpub":"1000-8713","publisherId":"SP","title":"色谱 "},"keywords":[{"id":"4e62f19b-083e-4f3c-9de5-9d4d89d0c6bb","keyword":"气相色谱法","originalKeyword":"气相色谱法"},{"id":"8c8bfbf3-82ff-4f11-8740-41848f0fad3d","keyword":"多维色谱法","originalKeyword":"多维色谱法"},{"id":"443964b1-eea5-45da-846e-03076ddaff2d","keyword":"在线分析","originalKeyword":"在线分析"},{"id":"c05f8a33-e679-4e07-9d7d-a91f999aa717","keyword":"过程控制","originalKeyword":"过程控制"},{"id":"0b4f7dc9-19a3-461b-8959-020472a46760","keyword":"柱切换","originalKeyword":"柱切换"}],"language":"zh","publisherId":"sp200103002","title":"在线分析己烷中痕量四氢呋喃的气相色谱柱系统研究","volume":"19","year":"2001"},{"abstractinfo":"采用紫外-可见(UV-Vis)光谱和荧光(FL)光谱研究了超声波照射激活光敏性化合物-血卟啉(HP)对脱氧核糖核酸(DNA)的损伤作用. 在超声波和HP的协同作用下,在UV-Vis光谱中DNA溶液的吸光度表现出明显的增色效应,在FL光谱中DNA-EB溶液的荧光强度表现出明显的猝灭现象. 考察了在超声波照射和HP存在的条件下,各种因素(如超声波照射时间,HP浓度和溶液酸度等)对DNA损伤程度的影响. 结果表明,在一定条件下,DNA的损伤程度随着超声波照射时间的增长和HP浓度的增加而增大. 溶液酸度对DNA损伤程度的影响较为复杂. 当溶液为弱酸性和中性时对DNA的损伤较为明显,弱碱性时对DNA的损伤程度则又呈下降趋势. 另外,在超声波损伤DNA的同时,溶液中的HP浓度也呈现出明显的下降趋势,说明HP也遭到了破坏. 同时还探讨了超声波照射激活HP对DNA损伤的可能机理,认为对DNA损伤的现象可以采用\"声致发光\"和\"热点\"形成的机理进行解释.","authors":[{"authorName":"王君","id":"51a034e8-e512-4a72-92b0-dd5ee83c489c","originalAuthorName":"王君"},{"authorName":"熊大珍","id":"1370a735-4836-45b4-afbb-22d359ed144d","originalAuthorName":"熊大珍"},{"authorName":"张朝红","id":"0964efda-c57d-47b5-8f7e-3724741e619f","originalAuthorName":"张朝红"},{"authorName":"张向东","id":"a0cdc2ee-abd5-4c43-8537-c22e8836f026","originalAuthorName":"张向东"},{"authorName":"<span style=\"color:red\">刘斌</span>","id":"8ca5f528-48a4-4c47-8ed3-a202456fa7c5","originalAuthorName":"刘斌"},{"authorName":"张邯玉","id":"af6e487a-1bc0-4373-b6e1-27381ddc53bf","originalAuthorName":"张邯玉"},{"authorName":"孙伟","id":"434c7238-b5d9-4eba-b460-3c9a3670b7c8","originalAuthorName":"孙伟"},{"authorName":"栗荣贺","id":"d77b910b-bf1f-4c93-851c-b4dc8a99f081","originalAuthorName":"栗荣贺"}],"doi":"10.3969/j.issn.1000-0518.2008.01.006","fpage":"22","id":"c2265700-ed71-41b5-a6db-8c58e887551c","issue":"1","journal":{"abbrevTitle":"YYHX","coverImgSrc":"journal/img/cover/YYHX.jpg","id":"73","issnPpub":"1000-0518","publisherId":"YYHX","title":"应用化学"},"keywords":[{"id":"498fbcec-ebc4-4c5f-b307-70462fe19c5b","keyword":"超声","originalKeyword":"超声"},{"id":"8e2a09c8-6c20-44a0-af5d-bdbf2370128c","keyword":"血卟啉(HP)","originalKeyword":"血卟啉(HP)"},{"id":"1f269684-a576-40f7-9526-9a78859f8314","keyword":"损伤","originalKeyword":"损伤"},{"id":"cc62c28c-02d0-4561-a6e9-85b87e6478a3","keyword":"脱氧核糖核酸(DNA)","originalKeyword":"脱氧核糖核酸(DNA)"}],"language":"zh","publisherId":"yyhx200801006","title":"高频超声照射下血卟啉(HP)对脱氧核糖核酸(DNA)结构的影响","volume":"25","year":"2008"}],"totalpage":20,"totalrecord":197}