{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"利用<span style=\"color:red\">电子束</span>快<span style=\"color:red\">退火</span>法制备了MgB2超导薄膜.该方法利用高能<span style=\"color:red\">电子束</span>,在中真空条件下照射Mg-B多层前驱膜,照射时间维持在1s以下.在<span style=\"color:red\">电子束</span>的作用下,前驱膜中的Mg和B迅速反应,形成MgB2相.整个<span style=\"color:red\">退火</span>过程没有Mg蒸气与氩气保护,极短的<span style=\"color:red\">退火</span>时间有效地限制了前驱膜中Mg的流失和Mg与其它物质的反应.与传统制备工艺相比,该方法避免了混合物理化学气相沉积法中乙硼烷的使用；省去异位<span style=\"color:red\">退火</span>法中提供高Mg蒸气压的限制,避免在有Mg块存在情况下<span style=\"color:red\">退火</span>后样品表面存在Mg污染的问题.利用该方法在SiC(001)衬底上生长了100nm厚的MgB2薄膜,其超导转变温度Tc～35K,均方根粗糙度为3.6nm,临界电流密度Jc(5K,0 T) =3.8×106 A/cm2.该方法对MgB2薄膜的大规模工业生产提供了一个新思路.","authors":[{"authorName":"戴倩","id":"b21a03ad-b194-4e57-a32b-cbf40a69adee","originalAuthorName":"戴倩"},{"authorName":"孔祥东","id":"2c09af99-515b-4827-93b5-232a05cc30d3","originalAuthorName":"孔祥东"},{"authorName":"冯庆荣","id":"1e4bd7aa-cc15-4487-a2be-676d5539fc07","originalAuthorName":"冯庆荣"},{"authorName":"韩立","id":"a7f612a6-7f77-48d3-9068-ef2ae4b06c92","originalAuthorName":"韩立"},{"authorName":"张怀","id":"766ffb11-6606-4f93-b5f7-dc2493fc7402","originalAuthorName":"张怀"},{"authorName":"杨倩倩","id":"39ec713a-a52c-4980-8ccd-f81f4ca88372","originalAuthorName":"杨倩倩"},{"authorName":"聂瑞娟","id":"f3913d2f-ed28-4683-b3a7-bc3c43518c5a","originalAuthorName":"聂瑞娟"},{"authorName":"王福仁","id":"4f05199e-c616-4168-9c22-ccfdce950689","originalAuthorName":"王福仁"}],"doi":"","fpage":"1","id":"2e48eb90-775e-430e-90ed-1e7365e67176","issue":"1","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"102de4ef-ef19-48be-b9ac-98c222c29dab","keyword":"<span style=\"color:red\">电子束</span><span style=\"color:red\">退火</span>","originalKeyword":"电子束退火"},{"id":"a3f4a875-eae8-4739-bfab-10e0e1a3db97","keyword":"MgB2","originalKeyword":"MgB2"},{"id":"70ee84de-90bd-4313-9808-11266d7d5b8e","keyword":"超导薄膜","originalKeyword":"超导薄膜"}],"language":"zh","publisherId":"dwwlxb201301001","title":"<span style=\"color:red\">电子束</span>快<span style=\"color:red\">退火</span>法制备MgB2薄膜及性质研究","volume":"35","year":"2013"},{"abstractinfo":"采用第一性原理计算我们研究了Jahn-Teller(JT)畸变诱导下K2AgF4和Cs2AgF4中的轨道有序和磁性.K2AgF4的基态是层内反铁磁态(AFM2),此时最近邻的Ag2+磁矩互为反平行,而它们的轨道则是相互平行的.Cs2AgF4的基态是层间反铁磁态(AFM1),同一AgF2层中的Ag2+磁矩相互平行,与近邻的AgF2层中Ag2+磁矩互为反平行.这两种体系磁性基态都可以用Goodenough-Kanamori规则进行很好的解释.","authors":[{"authorName":"王广涛","id":"81851033-228f-4517-98fd-7830b7db296c","originalAuthorName":"王广涛"},{"authorName":"王东洋","id":"d55e04ac-c5bc-4006-973a-84933558cc4a","originalAuthorName":"王东洋"},{"authorName":"张琳","id":"6a7e8c82-4539-430b-9da5-6b659c48e6bd","originalAuthorName":"张琳"},{"authorName":"易霞","id":"b9823d8d-9887-4b8e-aea5-e98892a0c30b","originalAuthorName":"易霞"}],"doi":"","fpage":"185","id":"0383e5f1-8700-4c6c-8f7f-1a353cc62de4","issue":"3","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"372e68b8-5255-41fe-b069-f7e98b5b5941","keyword":"<span style=\"color:red\">电子束</span><span style=\"color:red\">退火</span>","originalKeyword":"电子束退火"},{"id":"0f0cd8af-8b9c-4e0a-a20e-7358fd361ad5","keyword":"MgB2","originalKeyword":"MgB2"},{"id":"da0170de-14b5-4bfe-b595-8a1790d909ae","keyword":"超导薄膜","originalKeyword":"超导薄膜"}],"language":"zh","publisherId":"dwwlxb201503005","title":"K2AgF4和Cs2AgF4的<span style=\"color:red\">电子</span>结构和磁性","volume":"37","year":"2015"},{"abstractinfo":"利用溶胶一凝胶法制备出ZnO的凝胶前驱膜,用<span style=\"color:red\">电子束</span><span style=\"color:red\">退火</span>取代传统炉子<span style=\"color:red\">退火</span>,对前驱膜进行后处理,<span style=\"color:red\">退火</span>时固定<span style=\"color:red\">电子束</span>加速电压为10 kV,<span style=\"color:red\">退火</span>时间为5 min,调节聚焦<span style=\"color:red\">束</span>流和<span style=\"color:red\">电子束</span><span style=\"color:red\">束</span>流,使<span style=\"color:red\">退火</span>温度在600～900℃范围内变化.扫描电镜(SEM)、X射线衍射(XRD)、原子力显微镜(AFM)和压电力显微镜(PFM)的测试结果表明,运用<span style=\"color:red\">电子束</span><span style=\"color:red\">退火</span>法可制备出晶粒尺寸小于30nm、沿(002)择优取向、具有压电效应的六方ZnO薄膜,且随着<span style=\"color:red\">退火</span>温度的升高,晶粒尺寸逐渐变大,薄膜的结晶性和取向变好,压电效应越来越明显.","authors":[{"authorName":"李艳丽","id":"a4224059-03ac-4585-afe8-547c66c5cd97","originalAuthorName":"李艳丽"},{"authorName":"许壮","id":"0e366815-91bc-4ded-94e5-ba76e75d9733","originalAuthorName":"许壮"},{"authorName":"李辉","id":"4a0be0de-ae19-454c-8b25-aa06cdaa1fec","originalAuthorName":"李辉"},{"authorName":"孔祥东","id":"1ec2aad7-8586-4ed5-b5b1-27b2502643cb","originalAuthorName":"孔祥东"},{"authorName":"韩立","id":"01c52ae3-4229-4a32-bd8f-b2a63f703b36","originalAuthorName":"韩立"},{"authorName":"张雪娜","id":"c0707453-851b-4320-8993-1e4d5f1c1eea","originalAuthorName":"张雪娜"}],"doi":"10.11896/j.issn.1005-023X.2017.02.009","fpage":"41","id":"cf05f33b-d79c-4592-b17d-f09f3e49dc9f","issue":"1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"cd6f6d0e-b513-4120-9e7a-f08d849f2f77","keyword":"<span style=\"color:red\">电子束</span>","originalKeyword":"电子束"},{"id":"979c57ff-6356-4fc9-8d97-3565333485a5","keyword":"<span style=\"color:red\">退火</span>","originalKeyword":"退火"},{"id":"262d0846-1ff7-4b80-8396-70ed84cd2b99","keyword":"溶胶-凝胶","originalKeyword":"溶胶-凝胶"},{"id":"7be3784e-91b3-4016-8ef2-2c7ddd74ea83","keyword":"ZnO","originalKeyword":"ZnO"},{"id":"e0a2fb85-2109-4d29-aa98-9c0bc423c511","keyword":"薄膜","originalKeyword":"薄膜"}],"language":"zh","publisherId":"cldb201702009","title":"<span style=\"color:red\">电子束</span><span style=\"color:red\">退火</span>法制备ZnO薄膜","volume":"31","year":"2017"},{"abstractinfo":"采用普通<span style=\"color:red\">退火</span>和去应力<span style=\"color:red\">退火</span>两种<span style=\"color:red\">退火</span>工艺对TC18钛合金<span style=\"color:red\">电子束</span>焊接接头进行焊后热处理，研究了<span style=\"color:red\">退火</span>处理对焊接接头显微组织、拉伸性能和冲击性能的影响，并将接头的性能与母材的进行了对比。结果表明：与去应力<span style=\"color:red\">退火</span>相比，普通<span style=\"color:red\">退火</span>后，显微组织中的α相含量减少，β相含量增多，接头的强度降低，塑性更高；两种方式<span style=\"color:red\">退火</span>后，母材和焊接接头的拉伸性能相差不大，但母材的冲击性能优于焊接接头的。","authors":[{"authorName":"张思聪","id":"87449a02-25fa-4571-b289-253978430389","originalAuthorName":"张思聪"},{"authorName":"雷永平","id":"1f349cf2-48f3-4849-846f-f5293217178a","originalAuthorName":"雷永平"},{"authorName":"刘昕","id":"533eedf6-d9ad-411e-900f-8c11af9daa53","originalAuthorName":"刘昕"}],"doi":"10.11973/jxgccl201701006","fpage":"30","id":"b565426d-5982-4784-a416-2c3274bdec77","issue":"1","journal":{"abbrevTitle":"JXGCCL","coverImgSrc":"journal/img/cover/JXGCCL.jpg","id":"45","issnPpub":"1000-3738","publisherId":"JXGCCL","title":"机械工程材料"},"keywords":[{"id":"1a7bdf3b-4f9d-41d9-8327-2102541261ea","keyword":"TC1 8 钛合金","originalKeyword":"TC1 8 钛合金"},{"id":"c6b91e66-3f00-49b9-98ac-ce6e6d4b951c","keyword":"<span style=\"color:red\">电子束</span>焊接","originalKeyword":"电子束焊接"},{"id":"12a547a5-b893-4426-b099-3a192e28a147","keyword":"<span style=\"color:red\">退火</span>处理","originalKeyword":"退火处理"},{"id":"7e97c767-7f5f-48c4-97f1-bd01e029f956","keyword":"力学性能","originalKeyword":"力学性能"}],"language":"zh","publisherId":"jxgccl201701009","title":"<span style=\"color:red\">退火</span>对TC 18钛合金<span style=\"color:red\">电子束</span>焊接接头组织与力学性能的影响","volume":"41","year":"2017"},{"abstractinfo":"论文综述了<span style=\"color:red\">电子束</span>固化树脂基复合材料技术的特点及其在国内外的研究及发展状况,并介绍了可<span style=\"color:red\">电子束</span>固化的环氧树脂和光引发剂及其阳离子固化机理;具体地描述了经<span style=\"color:red\">电子束</span>固化的树脂浇铸体及复合材料的性能.","authors":[{"authorName":"王宇光","id":"68172cc6-7c4d-4ba6-8be0-fb7efaf5c80d","originalAuthorName":"王宇光"},{"authorName":"黎观生","id":"b137ba13-8711-4b1a-80bb-3576831f087b","originalAuthorName":"黎观生"},{"authorName":"张庆茂","id":"d89d88f5-0e3a-456e-a3c7-f9f35600e998","originalAuthorName":"张庆茂"},{"authorName":"李黎","id":"4823809a-0903-4d9e-a65c-977f3da0bc7e","originalAuthorName":"李黎"},{"authorName":"江璐霞","id":"4db9a277-610a-4a2e-8052-a4441c515751","originalAuthorName":"江璐霞"}],"doi":"10.3969/j.issn.1009-9239.2002.06.006","fpage":"27","id":"d3bbfde6-a5b6-4fe8-a35a-1d29f368bf40","issue":"6","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"41be70c5-4baf-4f7e-82b3-51f35d33740e","keyword":"<span style=\"color:red\">电子束</span>固化","originalKeyword":"电子束固化"},{"id":"fe0069fb-07e5-4eb9-b1c7-e2c99d72e557","keyword":"环氧树脂","originalKeyword":"环氧树脂"},{"id":"12cbdbeb-6683-4b33-b7df-d78db0499f0d","keyword":"光引发剂","originalKeyword":"光引发剂"}],"language":"zh","publisherId":"jycltx200206006","title":"<span style=\"color:red\">电子束</span>固化技术及可<span style=\"color:red\">电子束</span>固化环氧树脂体系","volume":"35","year":"2002"},{"abstractinfo":"对<span style=\"color:red\">电子束</span>物理气相沉积高硅硅钢片进行了高温快速<span style=\"color:red\">退火</span>处理.用SEM,EDS,XRD对制备态硅钢片和热处理态组织,成分,物相进行了表征,并测试了其电阻率和磁滞回线.结果表面:高温快速<span style=\"color:red\">退火</span>使高硅硅钢片硅成分变均匀,靠近基板侧的相由Fe3Si变成DO3;硅钢片中孔长大,电阻率从90μΩ·m增大到160μΩ·m,矫顽力减小,磁感应强度减小.","authors":[{"authorName":"李晓","id":"bc23871f-df5c-4643-97ae-847f40d19840","originalAuthorName":"李晓"},{"authorName":"孙跃","id":"b049c258-8320-4e9d-9eb6-9c25d640eb76","originalAuthorName":"孙跃"},{"authorName":"赫晓东","id":"aa5e8686-7801-42e6-b939-b40f5ce0a142","originalAuthorName":"赫晓东"}],"doi":"","fpage":"1603","id":"345ef55a-0411-4ba1-88d9-2764c9074305","issue":"10","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"2819656d-aabc-49da-b5cc-07c44fb7b150","keyword":"高温快速<span style=\"color:red\">退火</span>","originalKeyword":"高温快速退火"},{"id":"9ebaa896-2443-4f44-a095-9e042cca19ea","keyword":"高硅硅钢片","originalKeyword":"高硅硅钢片"},{"id":"93ec0420-af10-45bc-b97f-a2df26198015","keyword":"<span style=\"color:red\">电子束</span>物理气相沉积","originalKeyword":"电子束物理气相沉积"}],"language":"zh","publisherId":"gncl200710012","title":"高温快速<span style=\"color:red\">退火</span>对<span style=\"color:red\">电子束</span>物理气相沉积制备高硅硅钢片的影响","volume":"38","year":"2007"},{"abstractinfo":"采用<span style=\"color:red\">电子束</span>蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜.在氧气气氛下对ZnO:Al薄膜进行了<span style=\"color:red\">退火</span>处理,<span style=\"color:red\">退火</span>温度的范围为400～800℃.X射线衍射(XRD)图样表明所制备的ZnO:Al薄膜具有六方结构,为c轴(002)择优取向的多晶薄膜.用Van der Pauw法测量了ZAO薄膜的电学特性,结果显示其电导率在500℃达到最大值.测量了ZAO薄膜的室温微区光致发光和变温发光光谱,观测到了ZnO自由激子、束缚在中性施主中心(D0)上的束缚激子以及束缚在离化施主中心(D+0)上的束缚激子发射.","authors":[{"authorName":"骆英民","id":"6ed2560c-d615-4fa6-a26d-ad7c7b3bfb61","originalAuthorName":"骆英民"},{"authorName":"马剑刚","id":"be6e06ea-fd0c-4b1a-b764-9ad5ae3d4bfc","originalAuthorName":"马剑刚"},{"authorName":"徐海阳","id":"3a654f5b-336c-4f2d-bc67-493433e02a02","originalAuthorName":"徐海阳"},{"authorName":"刘益春","id":"84ccbc81-555a-44ee-8da9-0bfe9bd50637","originalAuthorName":"刘益春"},{"authorName":"钟殿强","id":"d787cec8-5f77-4787-86c3-31592ae3a662","originalAuthorName":"钟殿强"},{"authorName":"齐秀英","id":"29fd9ea7-1973-40c8-93e6-aef9d341e653","originalAuthorName":"齐秀英"}],"doi":"10.3969/j.issn.1000-985X.2004.05.018","fpage":"776","id":"b66c3306-abb5-4f1e-9f1d-1ef8d83ce2ff","issue":"5","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"f5ceb5a8-7246-4756-b4b5-921c0bd43e0c","keyword":"ZnO:Al薄膜","originalKeyword":"ZnO:Al薄膜"},{"id":"f988e0d8-764a-460e-8aec-bba781a3df7e","keyword":"<span style=\"color:red\">电子束</span>蒸镀","originalKeyword":"电子束蒸镀"},{"id":"840a65ae-035b-4dbf-8a36-4dd9cdbca681","keyword":"<span style=\"color:red\">退火</span>","originalKeyword":"退火"},{"id":"00ff4daa-3aa6-4bae-b2e7-7138b43229bb","keyword":"Van der Pauw法","originalKeyword":"Van der Pauw法"},{"id":"e90f385f-cc6f-45bf-8186-34e70cf43f29","keyword":"光致发光谱","originalKeyword":"光致发光谱"}],"language":"zh","publisherId":"rgjtxb98200405018","title":"热<span style=\"color:red\">退火</span>对<span style=\"color:red\">电子束</span>蒸镀方法制备的ZnO:Al薄膜光电性质的影响","volume":"33","year":"2004"},{"abstractinfo":"制备高质量的MgB2薄膜是实现MgB2超导<span style=\"color:red\">电子</span>器件应用的前提和基础.我们用<span style=\"color:red\">电子束</span>蒸发B膜和Mg/B多层膜为前驱然后后<span style=\"color:red\">退火</span>的方法,分别在高温区(～900℃)和中温区(～750℃)成功获得了MgB2超导薄膜.改变<span style=\"color:red\">退火</span>的Ar气压条件,采用B膜前驱<span style=\"color:red\">退火</span>的样品Tc可达到38K以上,转变宽度0.3K.Mg/B多层膜的结果尽管Tc稍低(Tc～35K),但薄膜表面更加均匀,且避免了高温下Mg蒸汽污染的问题.对于两种前驱<span style=\"color:red\">退火</span>中观察到的完全不同的<span style=\"color:red\">退火</span>气压影响,我们认为是与其各自的超导成相过程相联系的,在此基础上我们对<span style=\"color:red\">退火</span>气压效应给出了自己的分析和解释,为今后进一步细致研究<span style=\"color:red\">退火</span>过程中的薄膜生长机制提供了参考.","authors":[{"authorName":"吴克","id":"7fdb04c4-775d-40b8-b3b5-8b4c950c3f51","originalAuthorName":"吴克"},{"authorName":"余增强","id":"e0a2516f-fe82-4c35-ba7b-66c4eaac0830","originalAuthorName":"余增强"},{"authorName":"张解东","id":"7e77d741-ae81-4e76-b703-8ac690a36fcb","originalAuthorName":"张解东"},{"authorName":"王守证","id":"dc420579-9e62-4ced-8a9e-7538f83816cf","originalAuthorName":"王守证"},{"authorName":"聂瑞娟","id":"ed01642a-0bb9-4132-bbe4-0de6ed3a19c0","originalAuthorName":"聂瑞娟"},{"authorName":"王福仁","id":"1b97f7b8-58b5-4005-b7c9-f34ae64bc44c","originalAuthorName":"王福仁"}],"doi":"10.3969/j.issn.1000-3258.2006.03.003","fpage":"212","id":"041ba4c5-f7c8-4b18-9096-7ff4acc8d3cf","issue":"3","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"01948e2c-51bc-4cb7-8847-87cf4c434425","keyword":"MgB2薄膜","originalKeyword":"MgB2薄膜"},{"id":"65b523eb-b8b6-46a4-8492-87aa8b85c949","keyword":"<span style=\"color:red\">电子束</span>蒸发","originalKeyword":"电子束蒸发"},{"id":"0b8b0319-370e-4296-8c9a-fa56f0e141ca","keyword":"外<span style=\"color:red\">退火</span>","originalKeyword":"外退火"},{"id":"c05285a2-7354-4717-9bd1-60f2bdc4abba","keyword":"超导成相","originalKeyword":"超导成相"}],"language":"zh","publisherId":"dwwlxb200603003","title":"<span style=\"color:red\">电子束</span>蒸发在不同Ar气氛下外<span style=\"color:red\">退火</span>制备MgB2超导薄膜","volume":"28","year":"2006"},{"abstractinfo":"综述了<span style=\"color:red\">电子束</span>固化工艺相对于传统热固化工艺的特点,并从以下几方面介绍<span style=\"color:red\">电子束</span>固化技术的一些进展:自由基<span style=\"color:red\">电子束</span>固化聚合物基体、阳离子<span style=\"color:red\">电子束</span>固化聚合物基体、<span style=\"color:red\">电子束</span>固化复合材料界面特点和改性方法,并对<span style=\"color:red\">电子束</span>固化树脂基复合材料中存在的问题进行评述.","authors":[{"authorName":"刘玉文","id":"d4817020-7c96-4749-8fed-c78c445a5165","originalAuthorName":"刘玉文"},{"authorName":"张志谦","id":"219678ee-0696-4798-9663-784d41691b64","originalAuthorName":"张志谦"},{"authorName":"黄玉东","id":"a383688a-4e3e-45fa-b5cf-433ee8533406","originalAuthorName":"黄玉东"},{"authorName":"黄国丰","id":"83d602b8-ec37-4861-9a29-4188a1d7ec4e","originalAuthorName":"黄国丰"},{"authorName":"包建文","id":"ee91060b-1c70-4fdc-84fc-9c44bbbe6a11","originalAuthorName":"包建文"}],"doi":"10.3969/j.issn.1005-0299.2000.03.023","fpage":"97","id":"33c0eea8-3578-4596-aef8-e1ea9c0f57f3","issue":"3","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"955e92df-56ee-44b0-81a9-8241006b1e20","keyword":"<span style=\"color:red\">电子束</span>","originalKeyword":"电子束"},{"id":"685c5a22-d4cb-4f56-a6bd-eb88050095a9","keyword":"固化","originalKeyword":"固化"},{"id":"6e52e18b-786a-4f9a-86da-fb0de39710de","keyword":"复合材料","originalKeyword":"复合材料"},{"id":"bef7e88a-a8f3-475e-8e31-dfba8b7d4799","keyword":"界面","originalKeyword":"界面"}],"language":"zh","publisherId":"clkxygy200003023","title":"<span style=\"color:red\">电子束</span>固化复合材料及界面","volume":"8","year":"2000"},{"abstractinfo":"强流脉冲<span style=\"color:red\">电子束</span>是近几十年发展起来的一种新兴的表面处理技术.在介绍<span style=\"color:red\">电子束</span>表面处理工艺特点的基础上,重点论述了<span style=\"color:red\">电子束</span>表面处理技术中表面相变强化、表面重熔、表面合金化、表面非晶化、表面薄层<span style=\"color:red\">退火</span>等工艺方法及最近研究进展,提出怎样扩大强流脉冲<span style=\"color:red\">电子束</span>应用范围是研究重点之一.","authors":[{"authorName":"赵铁钧","id":"d1c211c4-59bd-42ec-9f92-5aec8a1d7bb0","originalAuthorName":"赵铁钧"},{"authorName":"田小梅","id":"6b8c7d7e-88a3-4506-bc8e-b674f0d93025","originalAuthorName":"田小梅"},{"authorName":"高波","id":"387e58d2-e383-4f6a-96ef-f53788f2a248","originalAuthorName":"高波"},{"authorName":"涂赣峰","id":"517dfd0b-477c-4304-a168-82d47f54c146","originalAuthorName":"涂赣峰"}],"doi":"","fpage":"89","id":"c02331fa-b6ca-4374-b817-030633af98e6","issue":"5","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"e1073dc6-c5d6-4260-88c3-e2d9e7a4b99f","keyword":"<span style=\"color:red\">电子束</span>","originalKeyword":"电子束"},{"id":"a243e8e3-d42b-47dd-9775-f452297a2cf6","keyword":"表面处理","originalKeyword":"表面处理"},{"id":"3b2c5ac8-875d-4fa3-bf32-41a67953d320","keyword":"进展","originalKeyword":"进展"}],"language":"zh","publisherId":"cldb200905022","title":"<span style=\"color:red\">电子束</span>表面处理的研究进展","volume":"23","year":"2009"}],"totalpage":2507,"totalrecord":25065}