{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"以柠檬酸作为络合剂,采用溶胶-凝胶法制备不同Yb含量的纳米级蓝色荧光材料GdvO_4:Tm.采用XRD、荧光光谱仪、SEM对产物的相组成、发光性能和颗粒形貌进行了分析.结果表明,所得掺杂Yb的GdVO_4:Tm蓝色发光粉体,粒度约80 nm;在260~310 nm的紫外光激发下,发出明亮的蓝色荧光;当Yb含量在1%(摩尔分数,下同)时,粉末的发光性能最好.","authors":[{"authorName":"徐晨","id":"70fd89c7-52a7-4a1a-98d0-4f70b05a5168","originalAuthorName":"徐晨"},{"authorName":"贺晶","id":"9bf0258f-cffb-422f-af8f-10c29d97f4d7","originalAuthorName":"贺晶"},{"authorName":"黄维刚","id":"e37d5bec-d4dd-4b11-bfc5-2ef1ae71f8c3","originalAuthorName":"黄维刚"}],"doi":"","fpage":"2057","id":"3068d9e2-0b66-4b42-9715-c6dab65d0a7b","issue":"11","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"7e14d929-28b8-4669-a6d3-4a90fc5f2338","keyword":"GdVO_4:Tm","originalKeyword":"GdVO_4:Tm"},{"id":"a10a7c98-ee24-473f-8c7b-7f795fdbca2c","keyword":"Yb","originalKeyword":"Yb"},{"id":"f34aab77-8fff-4c0d-b50c-fca2de877379","keyword":"荧光光谱","originalKeyword":"荧光光谱"},{"id":"06105a3e-c82a-458a-a271-b443c9854573","keyword":"敏化","originalKeyword":"敏化"}],"language":"zh","publisherId":"xyjsclygc200911040","title":"Yb掺杂蓝色荧光材料GdVO_4:Tm的发光性能","volume":"38","year":"2009"},{"abstractinfo":"采用溶胶-凝胶法合成了蓝色荧光纳米晶GdVO4:Tm粉体.通过XRD、荧光光谱和SEM分析了GdVO4:Tm粉体在不同焙烧温度、保温时间下的相结构、晶粒尺寸,形貌以及发光性能.结果表明:所得产物为单一的四方锆型GdVO4:Tm晶体,晶粒尺寸小于100 nm.GdVO4:Tm能够被200~320 nm的紫外光激发,在308 nm波长紫外光激发下发出波长为478 nm的明亮蓝光;焙烧温度为900 ℃,保温3 h得到的粉末发光性能最好.","authors":[{"authorName":"胡兵","id":"a133266b-ff97-40af-bcf9-d507163e3fed","originalAuthorName":"胡兵"},{"authorName":"黄维刚","id":"bf3a6c73-898a-4a47-b6d1-97b32e9ae5c6","originalAuthorName":"黄维刚"}],"doi":"","fpage":"176","id":"5802135a-9771-4a9d-81ca-9935e130df81","issue":"1","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"de2dfe53-0a7f-45e9-96f0-9e6a94dcd54e","keyword":"GdVO4:Tm","originalKeyword":"GdVO4:Tm"},{"id":"b4d0ba4f-0675-423f-ac15-72dcee3a1026","keyword":"稀土","originalKeyword":"稀土"},{"id":"63cfa1b5-d98b-4cfa-aa26-72d91c1e8b4f","keyword":"纳米晶发光材料","originalKeyword":"纳米晶发光材料"},{"id":"8e2a5434-99e9-4931-a210-bbfe1799c62a","keyword":"溶胶-凝胶","originalKeyword":"溶胶-凝胶"}],"language":"zh","publisherId":"xyjsclygc200801042","title":"蓝色荧光材料GdVO4:Tm的制备和性能","volume":"37","year":"2008"},{"abstractinfo":"采用水热法以十二烷基苯磺酸钠为活性剂合成了蓝色纳米荧光GdVO4:Tm粉体.用X射线衍射、扫描电镜、荧光光谱(PL)研究不同反应时间、反应物浓度和Tm3+掺杂量等条件下所得产物的结构和发光性能.结果说明,所得的产物为单一的四方锆型GdVO4:Tm晶体,颗粒大小约为20~50nm;GdVO4:Tm能够被200~320nm的紫外光激发,在278nm波长紫外光激发下发出波长为476nm的明亮蓝光,发光强度分别在反应物浓度为0.205mol/L时、反应时间为3d和Tm3+掺杂量为2%时最高.","authors":[{"authorName":"贺晶","id":"aa9e6c3c-8bf4-4dcd-8d50-826f56cdeb41","originalAuthorName":"贺晶"},{"authorName":"黄维刚","id":"d9150185-2a0f-4f06-9ebc-b5ceb878ff71","originalAuthorName":"黄维刚"},{"authorName":"徐晨","id":"6e597be9-b762-4d9a-bb44-9f77b32d3540","originalAuthorName":"徐晨"}],"doi":"","fpage":"210","id":"e57e2af6-74c4-48f1-af2f-1574c0721210","issue":"z2","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"2d63bbb5-b7e3-447a-b3cb-e6bcb8bd5f4c","keyword":"GdVO4:Tm","originalKeyword":"GdVO4:Tm"},{"id":"4355c521-de27-4598-8d17-270cc04de3ee","keyword":"稀土","originalKeyword":"稀土"},{"id":"0c06b3ab-7524-4c70-ada4-542e103abbd5","keyword":"纳米发光材料","originalKeyword":"纳米发光材料"},{"id":"caf13a93-f51f-4ecf-b420-6d8988d55910","keyword":"水热","originalKeyword":"水热"}],"language":"zh","publisherId":"gncl2010z2006","title":"水热法制备GdVO4:Tm蓝色纳米荧光粉体","volume":"41","year":"2010"},{"abstractinfo":"采用共沉淀法制备了Bi3+掺杂的GdVO4∶Tm3+荧光粉材料.采用X射线衍射仪(XRD)、扫描电镜(SEM)、荧光光谱仪(PL)对所得荧光粉的晶体结构,颗粒形貌以及发光特性进行了分析.结果表明:Bi3+的掺入不改变GdVO4相的晶体结构,所得的Gd0.99-xVO4∶Tm0.013+,Bicx3+荧光粉的相结构仍为四方锆型结构.荧光粉体的形貌呈现尺度较均匀的颗粒状,颗粒尺寸约为70 nm.Bi3+的掺入增强了Gd0.99-xVO4∶Tm0.013+,Bic3+荧光粉的发光强度,当Bi3+/Tm3+为0.5时,发光强度在波长为476 nm处达到最大值,显示为明亮的篮光.","authors":[{"authorName":"黄维刚","id":"012416bd-c7ef-4cc8-b6dc-14bdac5783a4","originalAuthorName":"黄维刚"},{"authorName":"李磊","id":"92063305-bda4-4f7e-be5a-55e32d324fc1","originalAuthorName":"李磊"}],"doi":"","fpage":"391","id":"c727e764-09ad-425b-8397-1a21ded3a736","issue":"2","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"6e6ffd44-51bb-43d4-8d81-62b441335b0b","keyword":"GdV04∶Tm3+","originalKeyword":"GdV04∶Tm3+"},{"id":"f8c57812-dd93-4b03-9460-d4e5cfcdecf7","keyword":"共沉淀法","originalKeyword":"共沉淀法"},{"id":"31996a5d-8835-4d53-a7e5-5f380a4778f1","keyword":"蓝色荧光材料","originalKeyword":"蓝色荧光材料"},{"id":"664c8e60-3717-4c6b-bdf5-be7b1953d570","keyword":"铋","originalKeyword":"铋"}],"language":"zh","publisherId":"xyjsclygc201402027","title":"Bi3+掺杂蓝色荧光粉GdVO4∶Tm3+的发光性能","volume":"43","year":"2014"},{"abstractinfo":"报道用光学显微技术观察Czochralski方发生长的新型激光材料Nd:GdVO4晶体中的生长缺陷的种类、形态和分布.这些缺陷包括:包裹物,色心,开裂,台阶面,位错,小角晶界和位错塞积群.讨论了这些缺陷的形成原因,提出了减少生长缺陷的措施.","authors":[{"authorName":"孙建亮","id":"b0905b9d-2f23-46a4-9e4e-80d2b7ae95b9","originalAuthorName":"孙建亮"},{"authorName":"张吉果","id":"d4a0fe5c-c35a-4add-a495-c4e86d2e139c","originalAuthorName":"张吉果"},{"authorName":"陶绪堂","id":"a4cd0ec9-db47-4e40-a385-5b1851e83bab","originalAuthorName":"陶绪堂"}],"doi":"","fpage":"262","id":"ab085137-6a24-4c8e-865c-013e051a48d6","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"19fee3cb-f10c-4d2e-b8b7-44b2070b1fa7","keyword":"Nd:GdVO4晶体","originalKeyword":"Nd:GdVO4晶体"},{"id":"1c7ed11b-a771-40b8-bab4-52ccd63ac6fb","keyword":"包囊物","originalKeyword":"包囊物"},{"id":"1c8eb9b6-d529-44bf-8ce6-be57479756ae","keyword":"位错","originalKeyword":"位错"},{"id":"b50c6da5-6aed-4411-9d97-081b74ff92d5","keyword":"小角晶界","originalKeyword":"小角晶界"},{"id":"4b82c2c5-f540-4156-b7e6-9c3b485083ac","keyword":"位错塞积群","originalKeyword":"位错塞积群"}],"language":"zh","publisherId":"gncl2004z1059","title":"光学显微术研究激光晶体Nd:GdVO4","volume":"35","year":"2004"},{"abstractinfo":"本文用提拉法生长出尺寸达φ30 mm×40 mm的优质Nd:GdVO4晶体,研究了其光谱特性.该晶体的吸收边为342 nm,在809 nm的吸收系数为4.61/cm.在342~2500 nm,Nd:GdVO4晶体的吸收主要为Nd3+的特征吸收.\n","authors":[{"authorName":"张庆礼","id":"7705b6fc-b34f-424a-a2a3-5cc02f742c95","originalAuthorName":"张庆礼"},{"authorName":"殷绍唐","id":"32b45896-7209-43c0-b515-e2fe05296757","originalAuthorName":"殷绍唐"},{"authorName":"王爱华","id":"1dd01ff6-51bb-4150-9e25-2336d905be78","originalAuthorName":"王爱华"},{"authorName":"陈长水","id":"e9b7207d-1f04-4020-9554-68d764efeccc","originalAuthorName":"陈长水"}],"doi":"10.3969/j.issn.1007-5461.2002.04.005","fpage":"310","id":"37365255-fa13-4e35-be72-fa648456aff2","issue":"4","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报 "},"keywords":[{"id":"9abea4a0-6a58-4a5a-a43a-1436623d19c4","keyword":"Nd:GdVO4","originalKeyword":"Nd:GdVO4"},{"id":"f2901450-3097-474e-8e98-9f5358514d4d","keyword":"晶体生长","originalKeyword":"晶体生长"},{"id":"9b81b943-3dbc-499d-8936-78af2a0d18ef","keyword":"吸收光谱","originalKeyword":"吸收光谱"}],"language":"zh","publisherId":"lzdzxb200204005","title":"Nd:GdVO4的晶体生长和光谱特性","volume":"19","year":"2002"},{"abstractinfo":"用提拉法生长了Nd∶GdVO4单晶,测量了其室温吸收谱和室温荧光谱,测量了其热扩散系数α和比热CP,从而得到了其热导率λ.可以看到Nd∶GdVO4晶体的吸收波长在808nm附近,与已经商品化的GaAlAs LD的发射波长能很好地匹配,从而增加了吸收效率,并且Nd∶GdVO4晶体具有较高的热导率,有望在高功率的激光系统中获得应用.所以Nd∶GdVO4晶体是理想的激光材料.","authors":[{"authorName":"赵朋","id":"0e5f30c9-8518-46f8-86d6-273d597777b6","originalAuthorName":"赵朋"},{"authorName":"夏海瑞","id":"76534d06-2f5d-4f07-8387-66dd730fd27a","originalAuthorName":"夏海瑞"},{"authorName":"秦连杰","id":"8d91c64e-8bcc-4693-bd15-73da01a7c8ff","originalAuthorName":"秦连杰"},{"authorName":"孟宪林","id":"35f398d2-62cf-4326-ac61-29c39d30549e","originalAuthorName":"孟宪林"}],"doi":"10.3969/j.issn.1000-985X.2003.03.012","fpage":"237","id":"feb86cef-daa5-4949-844c-d829fdbd8c23","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"16add377-8c39-487d-9a1d-4e0f648d1ad4","keyword":"Nd∶GdVO4晶体","originalKeyword":"Nd∶GdVO4晶体"},{"id":"99e4a135-4e1a-4f95-a98b-9a61c0f0d6f0","keyword":"激光晶体","originalKeyword":"激光晶体"},{"id":"8478bccf-e680-4049-8469-f7a2a0b33008","keyword":"光谱","originalKeyword":"光谱"},{"id":"550c37cc-3ace-44d9-bb51-42b78381ab15","keyword":"热导率","originalKeyword":"热导率"}],"language":"zh","publisherId":"rgjtxb98200303012","title":"Nd∶GdVO4激光晶体的光谱性质和热学性质","volume":"32","year":"2003"},{"abstractinfo":"中频感应加热提拉法生长了低钕掺杂的GdVO4晶体,用机械分析仪来测量Nd∶GdVO4晶体的热膨胀系数, 沿c方向的热膨胀系数为7.42×10-6/K,而沿a方向的热膨胀系数只有1.05×10-6/K,比同比Nd0.0054Y0.9946VO4晶体样品测量结果小.差示扫描热计法测量了Nd∶GdVO4晶体的比热, 298K时为0.52J/g*K.首次用激光脉冲法测量了Nd∶GdVO4晶体的室温热导率.实验表明,Nd∶GdVO4晶体沿<001>方向的热导率数值达11.4W/m*K, 比Nd∶YAG晶体高(测得10.7W/m*K),其<100>方向的热导率为10.1W/m*K.激光实验显示在较高功率泵浦激光输出上Nd∶GdVO4晶体具有比Nd∶YVO4晶体更加优良的性能.","authors":[{"authorName":"秦连杰","id":"c5f7818c-f165-424e-befa-62ebc9c8625b","originalAuthorName":"秦连杰"},{"authorName":"孟宪林","id":"667b5261-547d-4180-b874-c03e2b72ffb8","originalAuthorName":"孟宪林"},{"authorName":"杜晨林","id":"49124ba4-0a76-415a-8035-0bfc9983abf8","originalAuthorName":"杜晨林"},{"authorName":"祝俐","id":"78c5b758-68d7-4f4d-a551-2c1591b32add","originalAuthorName":"祝俐"},{"authorName":"徐炳超","id":"d78983b6-8adb-4b5b-9879-7227ea2fe830","originalAuthorName":"徐炳超"},{"authorName":"夏海瑞","id":"75b58454-2df3-4b32-8146-3044f8fcf13d","originalAuthorName":"夏海瑞"},{"authorName":"徐惠忠","id":"1bf6d64a-d934-4efd-a375-bb0b70daefd8","originalAuthorName":"徐惠忠"},{"authorName":"姜付义","id":"822e3aff-8f11-4f50-8b92-9a66d07b80a2","originalAuthorName":"姜付义"},{"authorName":"程秀凤","id":"dc6865d9-d827-482a-8566-06f1c27df1c3","originalAuthorName":"程秀凤"},{"authorName":"赵朋","id":"18adaa4c-0d40-4f68-9e08-4630c2c2ef0f","originalAuthorName":"赵朋"}],"doi":"10.3969/j.issn.1000-985X.2003.05.020","fpage":"502","id":"fba2d728-768f-46ea-9c00-25a1205e4807","issue":"5","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"c324e697-be2c-4fab-89dd-076c84912ee8","keyword":"掺钕钒酸钆晶体","originalKeyword":"掺钕钒酸钆晶体"},{"id":"4508ad3d-1574-4bdf-b85a-1dba5e8197b6","keyword":"热导率","originalKeyword":"热导率"},{"id":"f8f10e99-ec6c-435e-82b5-a5ad8afac56e","keyword":"比热","originalKeyword":"比热"},{"id":"819e1ad3-cad2-447d-b3aa-983b7e1d9513","keyword":"热膨胀","originalKeyword":"热膨胀"},{"id":"6d35ef8c-1afa-4d0b-aa48-6067f4995bf9","keyword":"激光性质","originalKeyword":"激光性质"}],"language":"zh","publisherId":"rgjtxb98200305020","title":"Nd∶GdVO4热常数的测量和激光性能研究","volume":"32","year":"2003"},{"abstractinfo":"应用中频感应提拉法生长出掺杂浓度为2%原子分数的Sm:GdVO4晶体,研究了室温下c轴方向sm:GdVO4晶体的吸收和荧光光谱.通过J-O理论计算出强度参数(Ωt),同时计算了对应于4G5/2能级的自发跃迁几率、荧光分支比和辐射寿命.通过荧光光谱计算了对应于566、604和646nm三个发射峰对应的发射截面,结果表明,Sm:GdVO4在604 nm的发射截面最大,是掺Sm:YAP在607 nm处发射截面的4.4倍.","authors":[{"authorName":"何晓明","id":"8937383f-aeb2-44e4-b405-a503fe46e40e","originalAuthorName":"何晓明"},{"authorName":"张连翰","id":"19b65a7c-ccd7-4463-8a0d-bc598aec9e8f","originalAuthorName":"张连翰"},{"authorName":"陈光珠","id":"e28f3913-8264-4c57-9c9d-07015fe8fe91","originalAuthorName":"陈光珠"},{"authorName":"何明珠","id":"1225533c-8a40-41a2-901a-3ba8c50cf8d7","originalAuthorName":"何明珠"},{"authorName":"杭寅","id":"7a7485d2-437d-46aa-8d03-ac1a53832b37","originalAuthorName":"杭寅"}],"doi":"","fpage":"514","id":"b6484422-8a2c-489f-b9f3-ac6b7bf50bb7","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"60bd837a-b545-4562-ba33-bedd2ae04b0b","keyword":"Sm:GdVO4晶体","originalKeyword":"Sm:GdVO4晶体"},{"id":"c389a771-8a3f-4d4d-825e-15c5dbd7cb74","keyword":"光谱性能","originalKeyword":"光谱性能"},{"id":"33e55200-dc6e-4f50-9880-93954ee50102","keyword":"J-O理论","originalKeyword":"J-O理论"}],"language":"zh","publisherId":"rgjtxb98200803002","title":"Sm:GdVO4晶体的生长及光谱性能研究","volume":"37","year":"2008"},{"abstractinfo":"本文报道了用Czochralski方法生长Nd∶GdVO4晶体,测量了该晶体的偏振吸收谱和荧光谱,表明晶体在808.5nm有吸收峰,其发射波长在1064nm.晶体中掺Nd浓度的原子分数为1.56%的Nd∶GdVO4的4F3/2荧光寿命为100μs.用激光二极管泵浦1mm厚的Nd∶GdVO4晶体,得到了超过1W 1064nm的输出光,泵浦阈值为20mW,光-光转换效率为55.9%,斜效率为63%.","authors":[{"authorName":"祝俐","id":"5cc93c7b-5c0a-4694-9c7d-1aebbcd9c5b0","originalAuthorName":"祝俐"},{"authorName":"张怀金","id":"430789ec-a38c-446e-b380-b70115c5532d","originalAuthorName":"张怀金"},{"authorName":"孟宪林","id":"92d55e9e-a7dc-420b-bbd9-354f6d682568","originalAuthorName":"孟宪林"},{"authorName":"张宏臻","id":"a9921fcb-cf8f-4d8f-9290-e89c2ddd7385","originalAuthorName":"张宏臻"},{"authorName":"","id":"397c8cc2-b7ae-4d35-8611-cd74d51603b4","originalAuthorName":""},{"authorName":"","id":"66dd8d70-f277-4b51-a466-e21a190fee86","originalAuthorName":""},{"authorName":"","id":"de7de7e4-a486-4044-8bd7-8b9f65c79dc6","originalAuthorName":""},{"authorName":"","id":"c54c3971-7d75-4e36-9fd0-dceb9a875e70","originalAuthorName":""}],"doi":"10.3969/j.issn.1000-985X.1999.03.004","fpage":"229","id":"bee2db71-175c-4e03-9aee-ea6b64dfe631","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"29bfc9f0-e847-4f25-a93a-5eadac823422","keyword":"Nd∶GdVO4晶体","originalKeyword":"Nd∶GdVO4晶体"},{"id":"3fd39a95-4dd8-48ec-b936-83ef9f70eb59","keyword":"激光晶体","originalKeyword":"激光晶体"},{"id":"b824203a-1cae-432d-bbbe-154a9d48856e","keyword":"光谱","originalKeyword":"光谱"},{"id":"8879a838-a436-445e-8dad-101273618482","keyword":"激光运转","originalKeyword":"激光运转"},{"id":"a4da1e90-5bec-406f-9db7-1e43782ad94f","keyword":"引上法晶体生长","originalKeyword":"引上法晶体生长"}],"language":"zh","publisherId":"rgjtxb98199903004","title":"Nd∶GdVO4晶体生长及其1064nm的激光特性","volume":"28","year":"1999"}],"totalpage":3604,"totalrecord":36035}