{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"为研究氧化依（ＩｒＯ<SUB>２</SUB>）对ＰＺＴ铁电薄膜疲劳性能的影响，利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ<SUB>２</SUB>／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ<SUB>２</SUB>薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ<SUB>２</SUB>比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．","authors":[{"authorName":"王世军","id":"14ddd4d8-3da5-405e-afde-463f6cbc514d","originalAuthorName":"王世军"},{"authorName":"丁爱丽","id":"4a15a332-f648-4d47-a97a-93d5d6e07257","originalAuthorName":"丁爱丽"},{"authorName":"仇萍荪","id":"2e21754e-bf7e-46e0-ab5f-dfa302567965","originalAuthorName":"仇萍荪"},{"authorName":"<span style=\"color:red\">何</span><span style=\"color:red\">夕</span><span style=\"color:red\">云</span>","id":"9a4c8577-a767-4e03-84f6-31db1e1c754a","originalAuthorName":"何夕云"},{"authorName":"罗维根","id":"cc083b18-2a0f-4f54-95dd-75701b4e390e","originalAuthorName":"罗维根"}],"categoryName":"|","doi":"","fpage":"733","id":"1ee4a5ae-016e-41c8-a609-72154c3fbb85","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"5ac801b0-d39f-4341-ae6f-58ff21129e24","keyword":"氧化铱薄膜","originalKeyword":"氧化铱薄膜"},{"id":"55f8b10e-12e8-4da8-8477-8fd0e91d8c21","keyword":" DC magnetron reactive sputtering","originalKeyword":" DC magnetron reactive sputtering"},{"id":"395f6d18-037f-4f41-aa7a-329bd9d28408","keyword":" thermal annealing","originalKeyword":" thermal annealing"}],"language":"zh","publisherId":"1000-324X_2000_4_15","title":"直流磁控反应溅射制备IrO<SUB>2</SUB>薄膜","volume":"15","year":"2000"},{"abstractinfo":"采用热压通氧烧结工艺制备PLZT(x/65/35)透明铁电陶瓷材料,系统地研究了不同的La含量(x=0.08～0.10)对PLZT陶瓷透过率的影响,当x=10时,材料的透过率达到68%.测试了不同的La含量下的PLZT透明陶瓷材料的电滞回线.用法拉第磁光调制法测量了不同的La含量的PLZT(x/65/35)透明铁电材料在电场下的双折射△n,△n随La含量的增加而下降.","authors":[{"authorName":"仇萍荪","id":"b2349987-7d83-4326-a678-90543d4ec8d8","originalAuthorName":"仇萍荪"},{"authorName":"郑鑫森","id":"9ccef882-29d0-4b34-a0d0-323b6f2ff736","originalAuthorName":"郑鑫森"},{"authorName":"程文秀","id":"0dc01f6f-aaad-4f4a-8f12-4ff04e1c9680","originalAuthorName":"程文秀"},{"authorName":"<span style=\"color:red\">何</span><span style=\"color:red\">夕</span><span style=\"color:red\">云</span>","id":"3a6ef473-cde6-4a5b-9026-e614e4896b21","originalAuthorName":"何夕云"},{"authorName":"丁爱丽","id":"5cf7429f-c1e8-405f-aace-30ac2d8ae341","originalAuthorName":"丁爱丽"}],"doi":"","fpage":"1522","id":"22deb135-0f9b-4be8-aa3c-8dd2a1c1ed6b","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"95a32e9f-c7c5-4cf6-8703-9e421f025515","keyword":"PLZT透明陶瓷","originalKeyword":"PLZT透明陶瓷"},{"id":"dedc997e-36d3-4b97-97b4-74e7d482384a","keyword":"铁电性","originalKeyword":"铁电性"},{"id":"59ca8956-48cd-4358-a687-9707a3ac90df","keyword":"透过率","originalKeyword":"透过率"},{"id":"ec871ff9-6650-420a-9278-08de791dcb85","keyword":"电光系数","originalKeyword":"电光系数"}],"language":"zh","publisherId":"gncl2004z1427","title":"PLZT(x/65/35)透明铁电陶瓷的制备及性能研究","volume":"35","year":"2004"},{"abstractinfo":"本文研究了一种以水为溶剂的Ba<SUB>0．5</SUB>Sr<SUB>0.5</SUB>TiO<SUB>3</SUB>（BST）液体源溶液，并用Sol－Gel技术制备出BST薄膜，实验中，对水基BST液体源浓缩凝胶进行了DTA／TGA分析，XRD谱分析显示，BST膜呈现纯钙钛矿相结构．从SEM电镜照片可以看到，BST薄膜厚度均匀一致，650℃热处理20min后，晶粒大小为200nm左右．性能测试结果表明，介电性能与膜厚有关，厚度为1250A的BST薄膜具有较优良的介电性能，当测试频率为1kHz时，介电常数为330，介电损耗为0.043左右．","authors":[{"authorName":"齐兵","id":"36028f61-2deb-49bf-87eb-f034cf538b28","originalAuthorName":"齐兵"},{"authorName":"<span style=\"color:red\">何</span><span style=\"color:red\">夕</span><span style=\"color:red\">云</span>","id":"6ddb7b33-8283-4296-9bdb-a0c338703630","originalAuthorName":"何夕云"},{"authorName":"丁爱丽","id":"ceda221e-f7c5-419d-ba53-2ae49612890c","originalAuthorName":"丁爱丽"},{"authorName":"仇萍荪","id":"cbae754c-2804-44d3-b90c-48aa22c1083b","originalAuthorName":"仇萍荪"},{"authorName":"陈先同","id":"1ff3dfdb-9666-4127-b560-04d332b8afee","originalAuthorName":"陈先同"},{"authorName":"罗维根","id":"10d4542f-15e2-4d39-a025-f1df96a7ccd9","originalAuthorName":"罗维根"}],"categoryName":"|","doi":"","fpage":"389","id":"4c7f74c5-69f5-4b51-a6f8-6c315e6c9d5e","issue":"3","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"5ffe10ea-f9b5-45b3-9982-cdb37fcd8742","keyword":"钙钛矿","originalKeyword":"钙钛矿"},{"id":"a12bea43-6680-410b-95e6-e2d83edcc9b4","keyword":"null","originalKeyword":"null"},{"id":"ceef5853-59ad-40f8-a25f-48400e677838","keyword":"null","originalKeyword":"null"},{"id":"063ad62b-eb09-41f8-87db-5900085c0349","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"1000-324X_1998_3_5","title":"水基溶胶-凝胶法制备Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>TiO<SUB>3</SUB>薄膜及其介电性能研究","volume":"13","year":"1998"},{"abstractinfo":"采用常压烧结方法制备了Mn掺杂的(K <SUB>0.5</SUB> Na<SUB> 0.5</SUB>) <SUB>0.96</SUB> Sr <SUB>0.02</SUB> Nb <SUB>1-x</SUB> Mn <SUB>x</SUB> O <SUB>3</SUB>无铅压电陶瓷. 研究了Mn含量对该体系材料的相组成、微观结构、介电、压电和热稳定性能的影响. XRD表明随着Mn含量的增加, 体系由正交相过渡到赝四方相; 而且, 富Na的第二相消失, 得到纯净的钙钛矿相结构. 在Mn含量为x=0.03和0.04时, 观察到了两个温度(200和390℃)处的介电反常, 这和晶格畸变引起的复晶胞结构有关. Mn含量为x=0.02时, 得到综合性能优良的压电超声换能器用材料: 介电常数ε<SUP>T</SUP><SUB>33</SUB>/ε<SUB>0</SUB>=479, 压电常数d<SUB>33</SUB>=121pC/N, 机电耦合系数 K<SUB>p</SUB>=41%, 机械品质因子Q<SUB>m</SUB>=298, 介电损耗tanδ=1.6%, 居里温度T<SUB>c</SUB>=391℃, 谐振频率f<SUB>r</SUB>和机电耦合系数K<SUB>p</SUB>随温度的变化率α<SUB>fr</SUB>(80℃)和α<SUB>Kp</SUB> (80℃)分别为-1.85%和1.19%.","authors":[{"authorName":"刘涛","id":"3551371b-fd79-4e24-b17c-c27affcf4580","originalAuthorName":"刘涛"},{"authorName":"丁爱丽","id":"1bf4d5ec-64e0-4cee-9615-fc3d5781ea3b","originalAuthorName":"丁爱丽"},{"authorName":"<span style=\"color:red\">何</span><span style=\"color:red\">夕</span><span style=\"color:red\">云</span>","id":"b2d7af71-345c-4ab7-86b5-5274b1ff08d1","originalAuthorName":"何夕云"},{"authorName":"郑鑫森","id":"33d595b0-ff66-4058-ad0e-5dc1afcb7f34","originalAuthorName":"郑鑫森"},{"authorName":"仇萍荪","id":"602bb973-653b-4be1-b70c-a4cafffc592d","originalAuthorName":"仇萍荪"},{"authorName":"程文秀","id":"84574bfb-8cff-4a50-ae6d-ebe11ed93ebb","originalAuthorName":"程文秀"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2007.00469","fpage":"469","id":"616825e9-dad4-4eed-944e-0bfd102f2878","issue":"3","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"b1d12bac-7331-4eb1-8caf-881a424fa363","keyword":"无铅","originalKeyword":"无铅"},{"id":"8c5f127a-a73a-4374-bb72-df7859d2e904","keyword":"piezoelectric ceramics","originalKeyword":"piezoelectric ceramics"},{"id":"c2f31fbe-8a44-49b8-8412-312be6f3ea83","keyword":"dielectric","originalKeyword":"dielectric"},{"id":"554d9165-668e-4a05-a883-32b87920da04","keyword":"transducer","originalKeyword":"transducer"}],"language":"zh","publisherId":"1000-324X_2007_3_36","title":"Mn掺杂(K <SUB>0.5</SUB> Na <SUB>0.5</SUB> ) <SUB>0.96</SUB> Sr<SUB> 0.02</SUB> NbO<SUB>3</SUB>无铅压电陶瓷的研究","volume":"22","year":"2007"},{"abstractinfo":"用射频磁控溅射法在SrTiO3衬底上外延生长PLZT薄膜,研究了不同的溅射工艺对薄膜生长速率的影响,探讨了不同的后期热处理条件与薄膜取向度的关系.在SrTiO3衬底上成功制备出外延生长的、厚度达1.5μm的PLZT薄膜.","authors":[{"authorName":"仇萍荪","id":"c65d4960-1f96-488f-8cde-dda2699b21d3","originalAuthorName":"仇萍荪"},{"authorName":"程文秀","id":"6b2be779-29b0-456b-8f01-3177909d8b72","originalAuthorName":"程文秀"},{"authorName":"<span style=\"color:red\">何</span><span style=\"color:red\">夕</span><span style=\"color:red\">云</span>","id":"3fe7953e-205f-4e02-9c07-7c53511b4341","originalAuthorName":"何夕云"},{"authorName":"郑鑫森","id":"8bf03659-4125-4f90-aabd-0c415b12a420","originalAuthorName":"郑鑫森"},{"authorName":"丁爱丽","id":"1be3532d-0dce-46db-8b6e-0f0aa335160d","originalAuthorName":"丁爱丽"}],"doi":"","fpage":"1142","id":"76598cdf-e043-4f3e-8043-5f3c0013a15d","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"b982eb65-9fa5-4a1b-8673-8b8eddc18e9e","keyword":"SrTiO3衬底","originalKeyword":"SrTiO3衬底"},{"id":"dab08cf1-4b1c-4933-9096-a3e93309709b","keyword":"PLZT膜","originalKeyword":"PLZT膜"},{"id":"c897f085-f0c4-41f0-8cc1-4db3fc80c577","keyword":"溅射条件","originalKeyword":"溅射条件"},{"id":"3c4579a5-044c-4bf2-aba5-974cadd1f262","keyword":"外延生长","originalKeyword":"外延生长"}],"language":"zh","publisherId":"gncl2004z1320","title":"SrTiO3衬底上溅射法外延生长PLZT薄膜","volume":"35","year":"2004"},{"abstractinfo":"采用射频磁控溅射工艺，在（111）Pt／Ti／SiO<SUB>2</SUB>／Si衬底上用PZT（53／47）陶瓷靶制备铁电薄膜．用快速光热退火炉对原位沉积的薄膜进行RTA处理．薄膜的相结构由XRD确定．通过改变氩气和氧气的比例以及衬底温度，研究了溅射气氛和衬底温度对PZT铁电薄膜结构的影响．实验表明，在不同的溅射气氛和衬底温度条件下，薄膜会经历不同的相变过程．用RT66A标准铁电测试设备测量了薄膜的铁电性能，在外加电压为5V时，<EM>P</EM><SUB>r</SUB>=14.6μC／cm<SUP>2</SUP>，<EM>E</EM><SUB>c</SUB>＝82．gkV／cm．","authors":[{"authorName":"曾晟","id":"a0e005e2-3ec8-4282-98fb-30a21bcac20d","originalAuthorName":"曾晟"},{"authorName":"丁爱丽","id":"11405223-da1b-40fd-905d-75b1d524c579","originalAuthorName":"丁爱丽"},{"authorName":"仇萍荪","id":"85b6526f-dbe4-4fc9-ab3e-ee4a4d72b585","originalAuthorName":"仇萍荪"},{"authorName":"<span style=\"color:red\">何</span><span style=\"color:red\">夕</span><span style=\"color:red\">云</span>","id":"761fddad-9a97-43bc-87b7-f187c8eebdb4","originalAuthorName":"何夕云"},{"authorName":"罗维根","id":"35a7c471-c9a6-4d25-a2c8-5198ca7d952d","originalAuthorName":"罗维根"}],"categoryName":"|","doi":"","fpage":"107","id":"7ca2cc9a-c69e-4135-9cc8-e4e2e870a432","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"b9640aa9-d8ce-4a14-bb49-faf46c87141e","keyword":"射频磁控溅射","originalKeyword":"射频磁控溅射"},{"id":"9dcc2dd8-3300-4665-8187-054cedafc50d","keyword":"null","originalKeyword":"null"},{"id":"241dc695-7e6f-43cb-93d1-d25f9849f753","keyword":"null","originalKeyword":"null"},{"id":"113650d4-5c32-43c1-95c7-0ff81a9c3b64","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"1000-324X_1999_1_20","title":"溅射工艺参数对PZT铁电薄膜相变过程的影响","volume":"14","year":"1999"},{"abstractinfo":"采用射频磁控溅射工艺,在(111)Pt/Ti/SiO2/Si衬底上用PZT(53/47)陶瓷靶制备铁电薄膜.用快速光热退火炉对原位沉积的薄膜进行RTA处理.薄膜的相结构由XRD确定.通过改变氩气和氧气的比例以及衬底温度,研究了溅射气氛和衬底温度对PZT铁电薄膜结构的影响.实验表明,在不同的溅射气氛和衬底温度条件下,薄膜会经历不同的相变过程.用RT66A标准铁电测试设备测量了薄膜的铁电性能,在外加电压为5V时,Pr=14.6uC/cm2,Ec=82.9kV/cm.","authors":[{"authorName":"曾晟","id":"a51fc9ef-f2a8-44eb-9e23-449e936d1837","originalAuthorName":"曾晟"},{"authorName":"丁爱丽","id":"bc71477c-13b7-4ee4-81aa-5de083e6d513","originalAuthorName":"丁爱丽"},{"authorName":"仇萍荪","id":"a994e40d-d898-47fe-9063-2fd2e92d0c53","originalAuthorName":"仇萍荪"},{"authorName":"<span style=\"color:red\">何</span><span style=\"color:red\">夕</span><span style=\"color:red\">云</span>","id":"0bdf7129-0ea0-442a-b4e3-87889de6b86b","originalAuthorName":"何夕云"},{"authorName":"罗维根","id":"da3ecc24-b171-437b-97a2-3dbb6fb81611","originalAuthorName":"罗维根"}],"doi":"10.3321/j.issn:1000-324X.1999.01.018","fpage":"107","id":"b32a3641-820a-4df4-a968-fc172fdf2f07","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"1a9a77b6-7327-4eb1-8047-317e6398e242","keyword":"射频磁控溅射","originalKeyword":"射频磁控溅射"},{"id":"8d936170-b026-437e-89c4-855ba5a14968","keyword":"铁电薄膜","originalKeyword":"铁电薄膜"},{"id":"bb67f354-7b59-41fb-8370-0a8734a36ed0","keyword":"烧绿石相","originalKeyword":"烧绿石相"},{"id":"6957bc45-5d27-40c9-a7fa-92f4546866ee","keyword":"钙钛矿相","originalKeyword":"钙钛矿相"}],"language":"zh","publisherId":"wjclxb199901018","title":"溅射工艺参数对PZT铁电薄膜相变过程的影响","volume":"14","year":"1999"},{"abstractinfo":"为研究氧化铱(IrO2)对PZT铁电薄膜疲劳性能的影响，利用直流(DC)磁控反应溅射(sputtering)工艺成功地在SiO2/Si(100)衬底上制得了高度取向的IrO2薄膜. 并在其上制成PZT铁电薄膜. 讨论了溅射参数(溅射功率、Ar/O2比、衬底温度)以及退火条件对氧化铱薄膜的结晶、取向和形态的影响.","authors":[{"authorName":"王世军","id":"fcba5ce7-3661-4e58-a2e2-12a12098446d","originalAuthorName":"王世军"},{"authorName":"丁爱丽","id":"8fed4c4d-d511-408a-8ace-ae76e8f31b83","originalAuthorName":"丁爱丽"},{"authorName":"仇萍荪","id":"b5550247-2c04-44d7-ae59-fd845541221f","originalAuthorName":"仇萍荪"},{"authorName":"<span style=\"color:red\">何</span><span style=\"color:red\">夕</span><span style=\"color:red\">云</span>","id":"64da4aa4-dfa7-48f3-9de6-389c5505a2e4","originalAuthorName":"何夕云"},{"authorName":"罗维根","id":"80883b2b-13be-4ee0-a0bc-ff1b423b0903","originalAuthorName":"罗维根"}],"doi":"10.3321/j.issn:1000-324X.2000.04.027","fpage":"733","id":"7a321770-1578-4d25-8469-8e7923f337b3","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"ac0ba0e9-666d-479a-a830-72300a7c6060","keyword":"氧化铱薄膜","originalKeyword":"氧化铱薄膜"},{"id":"73c132eb-392f-469f-9507-abec979764fe","keyword":"直流磁控反应溅射","originalKeyword":"直流磁控反应溅射"},{"id":"e559a89c-6fc5-4f03-bfe7-6ecce4d6c9de","keyword":"热退火","originalKeyword":"热退火"}],"language":"zh","publisherId":"wjclxb200004027","title":"直流磁控反应溅射制备IrO2薄膜","volume":"15","year":"2000"},{"abstractinfo":"研究用溶胶-凝胶方法制备PMNT(铌镁酸铅)薄膜的工艺过程.通过XRD和SPM系统地分析了热处理条件(热解温度和退火条件)与PMNT薄膜的形态.结晶和取向的对应关系,已建立起制备高度取向PMNT薄膜的工艺.并成功地在Pt/Ti/SiO2/Si衬底上制备成(111)取向的PMNT薄膜.\n","authors":[{"authorName":"邸利锋","id":"c8540d36-9f95-4687-9e03-b1b81cf05fec","originalAuthorName":"邸利锋"},{"authorName":"丁爱丽","id":"91e072d2-f898-49b3-9017-a848758159ba","originalAuthorName":"丁爱丽"},{"authorName":"<span style=\"color:red\">何</span><span style=\"color:red\">夕</span><span style=\"color:red\">云</span>","id":"5d8cf102-3ad8-4544-bcba-5859569426e2","originalAuthorName":"何夕云"},{"authorName":"罗维根","id":"8e99aaa2-09b0-472e-8791-630c51f86ce7","originalAuthorName":"罗维根"}],"doi":"10.3321/j.issn:1000-324X.2002.02.019","fpage":"299","id":"62fb220b-546d-4a08-9883-5ababbd25b50","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"b83af43a-e978-48b0-a04f-8b7f70f9d2ac","keyword":"弛豫铁电体","originalKeyword":"弛豫铁电体"},{"id":"9d92ea9a-1186-463e-9d74-f4e693364432","keyword":"溶胶-凝胶","originalKeyword":"溶胶-凝胶"},{"id":"2b135c9f-4aea-482f-bb5d-0f32e0cc1ff1","keyword":"热解","originalKeyword":"热解"},{"id":"fa22848f-b6fd-4acf-b16a-819951252d45","keyword":"退火","originalKeyword":"退火"}],"language":"zh","publisherId":"wjclxb200202019","title":"溶胶-凝胶法中热处理对PMNT薄膜结构的影响","volume":"17","year":"2002"},{"abstractinfo":"采用常压烧结方法制备了Mn掺杂的(K0.5Na0.5)0.96Sr0.02Nb1-xMnxO3无铅压电陶瓷.研究了Mn含量对该体系材料的相组成、微观结构、介电、压电和热稳定性能的影响.XRD表明随着Mn含量的增加,体系由正交相过渡到赝四方相;而且,富Na的第二相消失,得到纯净的钙钛矿相结构.在Mn含量为x=0.03和0.04时,观察到了两个温度(200和390℃)处的介电反常,这和晶格畸变引起的复晶胞结构有关.Mn含量为x=0.02时,得到综合性能优良的压电超声换能器用材料:介电常数εT33/ε0=479,压电常数d33=121pC/N,机电耦合系数Kp=41%,机械品质因子Qm=298,介电损耗tanδ=1.6%,居里温度Tc=391℃,谐振频率fr和机电耦合系数Kp随温度的变化率αfr(80℃)和αKp(80℃)分别为-1.85%和1.19%.","authors":[{"authorName":"刘涛","id":"779e9635-80bb-4819-adf5-120401bce599","originalAuthorName":"刘涛"},{"authorName":"丁爱丽","id":"29513544-e6ba-41aa-830f-1b1b8718e34e","originalAuthorName":"丁爱丽"},{"authorName":"<span style=\"color:red\">何</span><span style=\"color:red\">夕</span><span style=\"color:red\">云</span>","id":"d06935fa-7e6b-40b5-b97e-d2c00175bc39","originalAuthorName":"何夕云"},{"authorName":"郑鑫森","id":"3a1dab2f-e0c1-4567-9b86-ac39aa468d70","originalAuthorName":"郑鑫森"},{"authorName":"仇萍荪","id":"73235ab2-288e-4722-9c86-184d16986444","originalAuthorName":"仇萍荪"},{"authorName":"程文秀","id":"b0ccbd12-9a05-47bc-9e9b-1f613bcb571c","originalAuthorName":"程文秀"}],"doi":"10.3321/j.issn:1000-324X.2007.03.019","fpage":"469","id":"8058b7d4-38e5-43aa-833a-dbcb9de55641","issue":"3","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"4e817739-5d84-41a6-be7c-04b88403b216","keyword":"无铅","originalKeyword":"无铅"},{"id":"256a6335-1435-4c43-b681-c0f4914b2620","keyword":"压电陶瓷","originalKeyword":"压电陶瓷"},{"id":"6d1adf59-ac64-40e4-9fd2-6c33b6de41c7","keyword":"介电","originalKeyword":"介电"},{"id":"c1cf1df9-8371-45f6-bc2c-2a8a8a42008e","keyword":"换能器","originalKeyword":"换能器"}],"language":"zh","publisherId":"wjclxb200703019","title":"Mn掺杂(K0.5Na0.5)0.96Sr0.02NbO3无铅压电陶瓷的研究","volume":"22","year":"2007"}],"totalpage":19,"totalrecord":189}