{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"通过116Cd(14N,5n), Ebeam=65 MeV的核反应布居了125Cs的高自旋态. 利用在束γ谱学实验方法,进行了γ-γ符合测量, 使已知的125Cs核能级纲图得到了扩展, 并且修正了某些组态的带头激发能.","authors":[{"authorName":"马英君","id":"fbe4b52b-2206-4cbb-9ed9-ce488919a908","originalAuthorName":"马英君"},{"authorName":"小松原哲郎","id":"fdd34e40-6122-4fcb-a4dc-290639c3ec03","originalAuthorName":"小松原哲郎"},{"authorName":"王守宇","id":"81411edd-cabf-4d94-b713-4491b6197502","originalAuthorName":"王守宇"},{"authorName":"Cederwall B","id":"80fa5606-a055-4829-aef4-bc5ecde5f4c5","originalAuthorName":"Cederwall B"},{"authorName":"Nyberg J","id":"18b17a07-b5f1-43c7-a8b1-86b25dd3d14d","originalAuthorName":"Nyberg J"},{"authorName":"张玉虎","id":"b8dc8a22-032a-4c56-8f2e-596f985fdd88","originalAuthorName":"张玉虎"},{"authorName":"古野兴平","id":"e19009dc-1682-44f5-aa0c-481ba503bcb1","originalAuthorName":"古野兴平"},{"authorName":"李容俊","id":"e731039a-18fe-4b5c-b3b7-40fea1db6325","originalAuthorName":"李容俊"},{"authorName":"Sletten G","id":"704e0512-f729-428a-8156-08060ca29688","originalAuthorName":"Sletten G"},{"authorName":"Hagemann G","id":"36514152-c2af-4a2a-85eb-18528756b69a","originalAuthorName":"Hagemann G"},{"authorName":"Jensen H","id":"d4f26261-1b2e-44a0-b182-766dbb7de8ef","originalAuthorName":"Jensen H"},{"authorName":"Gjorup N","id":"12648309-38a5-45a8-a90f-653405e2674b","originalAuthorName":"Gjorup N"},{"authorName":"刘运祚","id":"7f1aee4c-b082-456c-9d3c-de19e7ec4eee","originalAuthorName":"刘运祚"}],"doi":"10.3969/j.issn.1007-4627.2004.04.018","fpage":"331","id":"6781fbff-9aa3-4678-bbd4-1fc91becc1df","issue":"4","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"245289ab-6fa1-4b28-84f3-ae5d6d0aafe4","keyword":"高自旋态","originalKeyword":"高自旋态"},{"id":"89fa61b6-8231-4d30-884f-23defcd914f4","keyword":"能级纲图","originalKeyword":"能级纲图"},{"id":"0c31998f-5038-4d4c-9aed-4c0652fb3047","keyword":"转动带","originalKeyword":"转动带"},{"id":"1b9f951c-2058-463e-b488-fefcb3aef1bd","keyword":"Nilsson单粒子组态","originalKeyword":"Nilsson单粒子组态"}],"language":"zh","publisherId":"yzhwlpl200404018","title":"125Cs的能级结构","volume":"21","year":"2004"},{"abstractinfo":"再次研究了丰中子核91Y 的高自旋能级结构通过82Se(13C, p3n)91Y 反应。新建立的包含几条关键能级的能级纲图澄清了以前研究中的几点不确定的地方。这几条能级具有Z=38和N=56子闭壳打破的特征,这涉及到张量力和自旋-同位旋依赖的中心力。","authors":[{"authorName":"何小风","id":"0dfb35ac-2d2c-4315-bec8-4c225ab6fbaa","originalAuthorName":"何小风"},{"authorName":"周小红","id":"2b601c14-5602-4d97-97a8-ccce02f5193f","originalAuthorName":"周小红"},{"authorName":"方永得","id":"1f2e92d7-2e93-4cf5-9e4f-f5f864b199a7","originalAuthorName":"方永得"},{"authorName":"柳敏良","id":"609c9044-33fc-4de6-a380-acede1bd6428","originalAuthorName":"柳敏良"},{"authorName":"张玉虎","id":"98874dbc-2677-4b15-b7b3-0f8c6dda38b7","originalAuthorName":"张玉虎"},{"authorName":"王凯龙","id":"757f7479-9e27-4dc5-83ab-2dbce5700f27","originalAuthorName":"王凯龙"},{"authorName":"王建国","id":"1daebdc5-c4ce-4037-adb1-533f712dcff3","originalAuthorName":"王建国"},{"authorName":"郭松","id":"60416cb1-55c2-4ce4-9871-ac2f086bb4d9","originalAuthorName":"郭松"},{"authorName":"强华","id":"2c8b86a8-330a-4a29-8570-391bb259f7c1","originalAuthorName":"强华"},{"authorName":"郑勇","id":"4fa642dc-f371-4dae-8775-53c7e93371b6","originalAuthorName":"郑勇"},{"authorName":"张宁涛","id":"29f7869f-cb09-4c6f-9cc8-ad3884429968","originalAuthorName":"张宁涛"},{"authorName":"李广顺","id":"59b28642-7589-49a5-86a8-b7509a519895","originalAuthorName":"李广顺"},{"authorName":"高丙水","id":"05de7eec-03ae-4f7f-ab52-a0632916056c","originalAuthorName":"高丙水"},{"authorName":"吴晓光","id":"f1075900-cc5b-487b-80ff-f13df3e04b0e","originalAuthorName":"吴晓光"},{"authorName":"贺创业","id":"21ced7f2-11cd-427a-aaa8-8a9a0e5fac92","originalAuthorName":"贺创业"},{"authorName":"郑云","id":"ff3cb536-8020-48f0-92a8-60767684108d","originalAuthorName":"郑云"}],"doi":"10.11804/NuclPhysRev.32.04.375","fpage":"375","id":"94ef18a1-b00f-4b2b-9c0e-af7316fd367f","issue":"4","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"f73ccbf8-b57e-4171-958a-78148b084f3a","keyword":"丰中子核","originalKeyword":"丰中子核"},{"id":"e5129c07-88ad-4b74-a2f8-9b8c1e468788","keyword":"能级纲图","originalKeyword":"能级纲图"},{"id":"03628902-d634-4a8e-80af-954afdbae795","keyword":"张量力","originalKeyword":"张量力"},{"id":"bd93463e-1fdc-44bd-9f20-bfe92b10075e","keyword":"自旋-同位旋依赖的中心力","originalKeyword":"自旋-同位旋依赖的中心力"}],"language":"zh","publisherId":"yzhwlpl201504001","title":"丰中子核91 Y的高自旋能级结构","volume":"32","year":"2015"},{"abstractinfo":"用能量为80 MeV的19F束通过反应76Ge(19F, 5n)90Nb布居了90Nb的高自旋态. 通过在束γ测量分析90Nb退激γ射线的符合级联关系, 发现了19条新的属于90Nb 的γ跃迁, 建立了90Nb的高自旋态能级纲图. 通过经验壳模型计算指定了部分能级的组态, 并结合实验DCO比值和与相邻N=49核素的系统比较, 确认了新能级的自旋和宇称.","authors":[{"authorName":"崔兴柱","id":"0124cac3-c22e-487e-ac25-26eaf2f862c2","originalAuthorName":"崔兴柱"},{"authorName":"竺礼华","id":"212ac72d-ffd5-4251-ac20-0b349fdee3ff","originalAuthorName":"竺礼华"},{"authorName":"吴晓光","id":"3c93bb78-68b6-467d-92f4-8532d92283c7","originalAuthorName":"吴晓光"},{"authorName":"李广生","id":"5e554416-0f5c-4dad-831b-8ff417182801","originalAuthorName":"李广生"},{"authorName":"温书贤","id":"e7d46d2d-5c35-4403-93f8-c32bc373c38b","originalAuthorName":"温书贤"},{"authorName":"王治民","id":"2ed3a971-a008-4087-97db-7e78f11d04bd","originalAuthorName":"王治民"},{"authorName":"贺创业","id":"5b2eb652-2c5a-4cf3-979a-0ce68a983892","originalAuthorName":"贺创业"},{"authorName":"张振龙","id":"1a2c7bae-795b-4dee-95f9-21ec74d37034","originalAuthorName":"张振龙"},{"authorName":"孟锐","id":"a6864f21-7f3c-41c0-8f25-584b4e2e5530","originalAuthorName":"孟锐"},{"authorName":"马瑞刚","id":"568db749-c93c-4e1a-85ca-4cd6eee7bb54","originalAuthorName":"马瑞刚"},{"authorName":"骆鹏","id":"cbf2e103-5e89-4489-862b-b4b9e93f7d33","originalAuthorName":"骆鹏"},{"authorName":"郑勇","id":"52a7fa1d-a19c-4ab1-a4f6-26aef183a4fc","originalAuthorName":"郑勇"},{"authorName":"霍俊德","id":"2266d9c1-8905-4b59-8030-d66c1f106314","originalAuthorName":"霍俊德"},{"authorName":"M.M.Ndontchueng","id":"fdba41ca-dadc-4810-830a-5f2cca6fc7c9","originalAuthorName":"M.M.Ndontchueng"}],"doi":"10.3969/j.issn.1007-4627.2004.04.021","fpage":"339","id":"4a8841b7-8dca-4bf9-930b-f0c76354ed87","issue":"4","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"33ab8cbc-95ca-446e-a8bc-a549f105a4f3","keyword":"高自旋态","originalKeyword":"高自旋态"},{"id":"c6b9d3b7-f98c-475d-9ef2-1f3f66e7427d","keyword":"在束γ","originalKeyword":"在束γ"},{"id":"6a690b51-fc63-4418-8d3a-6b0f8caabf63","keyword":"能级纲图","originalKeyword":"能级纲图"},{"id":"361d03a7-7386-48cb-9f00-6f7dcb402f90","keyword":"原子核壳模型","originalKeyword":"原子核壳模型"},{"id":"eb4cea4e-f18c-40e0-9fa1-b5b5e42c42fb","keyword":"组态","originalKeyword":"组态"}],"language":"zh","publisherId":"yzhwlpl200404021","title":"奇奇核90Nb的高自旋态研究","volume":"21","year":"2004"},{"abstractinfo":"对由160Tb的β-衰变而产生的γ射线利用GeLi和HpGe探测器进行了单谱和γ-γ符合谱的测量. 根据单谱和γ-γ符合谱的测量结果给出了160Tb的β-衰变纲图. 并用绝热对称转动模型对160Dy 中转动带与振动带的耦合参数Zγ值进行了计算,得出从振动带到转动带的γ跃迁几率B(E2)值之比不能通过唯一的Zγ值来描述.","authors":[{"authorName":"孙普男","id":"700ec6e5-7650-49e5-90cb-06b8b58cf109","originalAuthorName":"孙普男"}],"doi":"10.3969/j.issn.1007-4627.2003.01.005","fpage":"30","id":"4b4ae449-bf2a-4370-8828-6c738029fc4f","issue":"1","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"497a7fc5-2029-4def-a6d4-1a938378a068","keyword":"160Tb/β-衰变","originalKeyword":"160Tb/β-衰变"},{"id":"be4d52c7-f4ac-4cf7-a4cd-f8f3244e5102","keyword":"衰变纲图","originalKeyword":"衰变纲图"},{"id":"e379ea23-92c7-44e7-ab2d-9cd96c83ab70","keyword":"带耦合参数","originalKeyword":"带耦合参数"}],"language":"zh","publisherId":"yzhwlpl200301005","title":"160Tb β-衰变纲图研究","volume":"20","year":"2003"},{"abstractinfo":"本文提出的简捷构建完整极图的定量计算法以一张实测部分极图为约束,根据矢量法之基本方程,确定未测部分的极图。并可定量预测其它晶面的极图。整个构建过程快速、准确。本法的实施,不仅简化了X射线衍射实验,且较大幅度地降低了极图测试工作量,提高了织构分析的效率。","authors":[{"authorName":"左良","id":"77152605-68fd-42f1-a8d5-c386b051094b","originalAuthorName":"左良"},{"authorName":"徐家桢","id":"063992f2-2246-4767-aad0-34a175319f96","originalAuthorName":"徐家桢"},{"authorName":"梁志德","id":"9558a81a-099c-4f37-ad67-2c3c805e9e5e","originalAuthorName":"梁志德"}],"categoryName":"|","doi":"","fpage":"149","id":"4d547032-e0a2-47c8-b56d-5bc8fb4945f1","issue":"3","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"f5f54940-4e9c-40d7-ad2a-4a5f6483ac9e","keyword":"极图","originalKeyword":"极图"},{"id":"ae414d0c-97a0-457c-9a72-572367112c4f","keyword":"vector method","originalKeyword":"vector method"}],"language":"zh","publisherId":"0412-1961_1989_3_20","title":"用部分极图数据构建完整极图","volume":"25","year":"1989"},{"abstractinfo":"通过测试富Cd原料无籽晶垂直布里奇曼法生长出的高阻Cd0.8Zn0.2Te (CZT)单晶体的I-T特性曲线,利用热激活能原理来分析单晶体内的缺陷,结果得到晶体中有一个由镉空位引起的电子陷阱,其深度为0.539eV.由于俘获能级有较高的激活能,在常温下,价带上的载流子不会被激发,所以该晶体适用于制作室温核辐射探测器.另外还研究了CZT晶体在室温下的I-V特性,测得采用该方法生长的CZT单晶体电阻率高达5.0×1010Ω*cm,制作的核辐射探测器在室温下获得了比较好的241Am 59.5keV能谱.","authors":[{"authorName":"韦永林","id":"6ce28fbb-cbab-42a1-b9c4-81479277418b","originalAuthorName":"韦永林"},{"authorName":"朱世富","id":"eafead57-6f82-48e2-9a74-a0b153dafb57","originalAuthorName":"朱世富"},{"authorName":"赵北君","id":"460c31d7-5f17-4dcb-a995-41f357ecd736","originalAuthorName":"赵北君"},{"authorName":"王瑞林","id":"f69afb79-fe0f-4468-95f4-dcafe09bcae4","originalAuthorName":"王瑞林"},{"authorName":"高德友","id":"d8eee510-0e5a-4108-9ca5-edabea6721d1","originalAuthorName":"高德友"},{"authorName":"魏昭荣","id":"f9dc88df-0af0-4682-b3c6-56cb5d8acc99","originalAuthorName":"魏昭荣"},{"authorName":"李含东","id":"041bb548-3f3d-440b-8bb0-2abbb338162e","originalAuthorName":"李含东"},{"authorName":"唐世红","id":"7d1ea279-7283-4701-90c4-c8219bf8453f","originalAuthorName":"唐世红"}],"doi":"10.3969/j.issn.1000-985X.2004.02.014","fpage":"189","id":"1cbe536e-10d3-4b78-9613-c3af7a9e3aa5","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"35ccf89e-cf35-430d-8b6c-63f702718d53","keyword":"CZT单晶体","originalKeyword":"CZT单晶体"},{"id":"5db9b198-cb83-4684-a7f4-669d7d1a4663","keyword":"I-T特性曲线","originalKeyword":"I-T特性曲线"},{"id":"1c1483b5-d69a-438e-9d05-d39d4384caeb","keyword":"激活能","originalKeyword":"激活能"},{"id":"e334ae55-686e-44d9-818f-0ba1d4b1fda1","keyword":"探测器","originalKeyword":"探测器"},{"id":"256dcea0-5672-43af-af31-1d613e4755ce","keyword":"缺陷能级","originalKeyword":"缺陷能级"}],"language":"zh","publisherId":"rgjtxb98200402014","title":"CdZnTe晶体的缺陷能级分析","volume":"33","year":"2004"},{"abstractinfo":"利用低压垂直布里奇曼法制备了不同In掺杂量的CdZnTe晶体样品, 采用低温光致发光谱(PL)、深能级瞬态谱(DLTS)以及霍尔测试等手段研究了In掺杂CdZnTe晶体中的主要缺陷能级及其可能存在的补偿机制. PL测试结果表明, 在In掺杂样品中, In原子占据了晶体中原有的Cd空位, 形成了能级位于Ec-18meV的替代浅施主缺陷[InCd+], 同时 [InCd+]还与[VCd2-]形成了能级位于Ev+163meV的复合缺陷[(InCd+-VCd2-)-]. DLTS分析表明, 掺In样品中存在导带以下约0.74eV的深能级电子陷阱能级, 这个能级很可能是Te反位[TeCd]施主缺陷造成的.
由此, In掺杂CdZnTe晶体的电学性质是In掺杂施主缺陷、Te反位深能级施主缺陷与本征受主缺陷Cd空位和残余受主杂质缺陷补偿的综合结果.","authors":[{"authorName":"李刚","id":"ab304d90-1139-44f3-b53b-931d1e237772","originalAuthorName":"李刚"},{"authorName":"桑文斌","id":"4f3fc7c6-d42a-4d6f-9471-95f9a97dd117","originalAuthorName":"桑文斌"},{"authorName":"闵嘉华1","id":"1d6c09c1-10db-4577-8983-feeb0ee8d195","originalAuthorName":"闵嘉华1"},{"authorName":"钱永彪施朱斌1","id":"ffa29a8f-d16c-4e4d-a5b5-d859f2a8227c","originalAuthorName":"钱永彪施朱斌1"},{"authorName":"戴灵恩","id":"6065ad48-f138-4428-8180-9d8877cf6ed8","originalAuthorName":"戴灵恩"},{"authorName":"赵岳","id":"98f4cdd8-e044-4af9-af3e-9c5e2c75fab1","originalAuthorName":"赵岳"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2008.01049","fpage":"1049","id":"e94a8eb7-38ae-44f4-a743-663b7cbd5b5b","issue":"5","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"45108c2d-2661-4423-bb10-44608a6edcda","keyword":"碲锌镉","originalKeyword":"碲锌镉"},{"id":"9dc5e039-2d9e-4b73-a2d5-21b9a2929035","keyword":" low temperature PL","originalKeyword":" low temperature PL"},{"id":"c40e6278-3792-4be2-bd17-a7137d364fa5","keyword":" deep level transient spectroscopy","originalKeyword":" deep level transient spectroscopy"},{"id":"6bd64254-83a8-4caa-87ae-bbf405bd5a95","keyword":" defect levels","originalKeyword":" defect levels"}],"language":"zh","publisherId":"1000-324X_2008_5_27","title":"高阻In掺杂CdZnTe晶体缺陷能级的研究","volume":"23","year":"2008"},{"abstractinfo":"利用半经典理论方法,描述处于圆偏振光场中的运动两原子纠缠体系的波函数和能级,通过对体系波函数的分析,得到了运动纠缠原子能级分裂现象.","authors":[{"authorName":"王长春","id":"6ffc9270-26f8-4a4f-8626-94f0ea956231","originalAuthorName":"王长春"},{"authorName":"汪贤才","id":"8a3d051d-8d7b-4ef5-b412-634eb2f0b2be","originalAuthorName":"汪贤才"},{"authorName":"方曙东","id":"1f2de29f-29ef-4cf5-9f8f-8e46b305adff","originalAuthorName":"方曙东"}],"doi":"10.3969/j.issn.1007-5461.2005.02.015","fpage":"200","id":"5b67a9ef-31fa-4dab-a7b2-8b2506fac84e","issue":"2","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报 "},"keywords":[{"id":"0bbf81df-47cd-41d4-a53d-7703d999b974","keyword":"非线性光学","originalKeyword":"非线性光学"},{"id":"7c0e7a51-7dd0-4df8-b10d-3a9f88846e87","keyword":"运动纠缠原子","originalKeyword":"运动纠缠原子"},{"id":"2d17e76a-b615-4e33-9a9c-2cf0b3231ec1","keyword":"能级分裂","originalKeyword":"能级分裂"},{"id":"aae40340-408b-46ae-976f-ba2fb2c39ffd","keyword":"圆偏振光场","originalKeyword":"圆偏振光场"}],"language":"zh","publisherId":"lzdzxb200502015","title":"光场中运动纠缠态原子的能级分裂","volume":"22","year":"2005"},{"abstractinfo":"利用低压垂直布里奇曼法制备了不同In掺杂量的CdZnTe晶体样品,采用低温光致发光谱(PL)、深能级瞬态谱(DLTS)以及霍尔测试等手段研究了In掺杂CdZnTe晶体中的主要缺陷能级及其可能存在的补偿机制.PL测试结果表明,在In掺杂样品中,In原子占据了晶体中原有的Cd空位,形成了能级位于Ec-18meV的替代浅施主缺陷[In+Cd],同时[In+Cd]还与[v2-Cd]形成了能级位于Ev+163meV的复合缺陷[(In+Cd-V2-Cd)-].DLTS 分析表明,掺In样品中存在导带以下约0.74eV的深能级电子陷阱能级,这个能级很可能是Te反位[Tecd]施主缺陷造成的.由此,In掺杂CdZnTe晶体的电学性质是In掺杂施主缺陷、Te反位深能级施主缺陷与本征受主缺陷Cd空位和残余受主杂质缺陷补偿的综合结果.","authors":[{"authorName":"李刚","id":"172dac05-c231-4e6b-94d2-f5aa2e5719e3","originalAuthorName":"李刚"},{"authorName":"桑文斌","id":"933c9fc8-ede4-42ce-9ca7-d9d262cce8d2","originalAuthorName":"桑文斌"},{"authorName":"闵嘉华","id":"15163712-bb51-4327-8ee4-8e0c9f20a199","originalAuthorName":"闵嘉华"},{"authorName":"钱永彪","id":"749bf429-ce4c-4cc1-a1c6-6f039d1c5b53","originalAuthorName":"钱永彪"},{"authorName":"施朱斌","id":"8934c3b5-8cc3-46b5-81b5-6da5d16e285c","originalAuthorName":"施朱斌"},{"authorName":"戴灵恩","id":"b3ce24e3-948e-410e-84b7-27b8acd11e40","originalAuthorName":"戴灵恩"},{"authorName":"赵岳","id":"2a3a73f9-6498-445e-907a-14a087e19aa9","originalAuthorName":"赵岳"}],"doi":"10.3321/j.issn:1000-324X.2008.05.037","fpage":"1049","id":"47071bd1-adc7-4e30-9327-88047d123293","issue":"5","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"8617c74a-a382-474f-bd38-9e876f1acb1e","keyword":"碲锌镉","originalKeyword":"碲锌镉"},{"id":"d68dc1c4-d557-453b-bd73-83695b431da9","keyword":"低温PL","originalKeyword":"低温PL"},{"id":"2be02024-d9fa-41ef-981d-48b61c0767ca","keyword":"深能级瞬态谱","originalKeyword":"深能级瞬态谱"},{"id":"556f22fa-63f5-4e52-8ce0-e94b8f7dd22b","keyword":"缺陷能级","originalKeyword":"缺陷能级"}],"language":"zh","publisherId":"wjclxb200805037","title":"高阻In掺杂CdZnTe晶体缺陷能级的研究","volume":"23","year":"2008"},{"abstractinfo":"报道了在室温下用荧光光谱仪和飞秒脉冲激光激发诱导光致发光,获得氧化锌纳米颗粒(平均直径约为10 nm)缺陷发光光谱的实验,验证了氧化锌纳米颗粒缺陷能级的位置.锌填隙缺陷在距离导带底0.4 eV处产生浅施主能级,锌空位缺陷在价带顶0.3 eV处产生浅受主能级,氧锌替位缺陷在价带顶1.08 eV处产生深受主能级,在导带底1.56 eV处有氧空位缺陷引起的深杂质能级产生,氧填隙缺陷在价带顶1.35 eV处产生深受主能级.","authors":[{"authorName":"李成斌","id":"1db57454-912a-4894-b28a-5eb0300c4b45","originalAuthorName":"李成斌"},{"authorName":"徐至展","id":"d24d268c-ddb7-45f9-b3bb-c9b5e885ffd3","originalAuthorName":"徐至展"},{"authorName":"贾天卿","id":"56a608fa-5220-4c01-9e82-fe9c019e7328","originalAuthorName":"贾天卿"},{"authorName":"冯东海","id":"c053f8b3-905a-4b07-a6e7-fc183d1fde9f","originalAuthorName":"冯东海"},{"authorName":"孙海轶","id":"9e895fb5-476c-4b0e-8fb7-3b200cbca7d0","originalAuthorName":"孙海轶"},{"authorName":"李晓溪","id":"56a0f046-93e7-4cb4-b43f-d82f0537ff3a","originalAuthorName":"李晓溪"},{"authorName":"徐世珍","id":"58131ccf-80cd-4763-82a2-a762e7f20426","originalAuthorName":"徐世珍"}],"doi":"10.3969/j.issn.1007-2780.2004.06.005","fpage":"431","id":"a436d8d1-a035-40b4-b45a-de2861764622","issue":"6","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"f4bc4525-41ab-48f6-b46e-7d0e7654c9af","keyword":"光致发光","originalKeyword":"光致发光"},{"id":"6c14d254-632d-45c7-b6e5-6d583e2ae9a4","keyword":"飞秒激光","originalKeyword":"飞秒激光"},{"id":"c3439338-0249-45cc-8501-0b9f0e2bada5","keyword":"氧化锌纳米颗粒","originalKeyword":"氧化锌纳米颗粒"},{"id":"50db9417-5100-4ec5-b0de-2a945d2c0994","keyword":"缺陷","originalKeyword":"缺陷"}],"language":"zh","publisherId":"yjyxs200406005","title":"氧化锌纳米颗粒缺陷能级发光特性研究","volume":"19","year":"2004"}],"totalpage":363,"totalrecord":3627}