杨卫桥
,
干福熹
,
邓佩珍
,
徐军
,
李杼智
,
蒋成勇
人工晶体学报
doi:10.3969/j.issn.1000-985X.2002.06.011
γ-LiAlO2晶体是一种非常有前途的GaN衬底材料,本文利用化学腐蚀光学显微术和同步辐射X射线形貌术研究了LiAlO2晶体的缺陷.结果表明,提拉法生长的γ-LiAlO2晶体中的缺陷主要为位错、包裹物和亚晶界.并发现在其(100)晶片上的腐蚀形貌两面有较大差异.
关键词:
γ-LiAlO2晶体
,
缺陷
,
位错
,
同步辐射X射线形貌术
,
GaN衬底
Taohua HUANG
,
Shengming ZHOU
,
Hao TENG
,
Hui LIN
,
Jun ZOU
,
Jianhua ZHOU
,
Jun WANG
材料科学技术（英文）
γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by highresolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum (FWHM) of 17.7–22.6 arcsec and etch pits density of (0.3–2.2)×104 cm-2 throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5 μm and becomes completely absorbing around 6.7 μm wavelength. The optical absorption edge in near UV region is about 191 nm.
关键词:
γ-LiAlO2 crystal
,
提拉法
,
化学腐蚀
,
透过光谱
