Gang JI
,
Ze ZHANG1
,
Yanxue CHEN
,
Shishen YAN
,
Yihua LIU
,
Liangmo MEI
金属学报(英文版)
doi:10.1016/S1006-7191(08)60083-6
[FeNi(3~nm)/Zn1- xCoxO(3~nm)]2/ZnO(d nm)/[Zn1-xCoxO(3 nm)/Co(3 nm)]2 (d=3 and 10) semiconductor junctions were prepared by magnetron sputtering system and photolithography. The spin valve effect was observed in these junctions because the utility of the ferromagnetic composite layers acted as soft and hard magnetic layers. The electrical detection was performed by measuring the magnetoresistance of these junctions to investigate the current spin polarization αsc in the ZnO layer and the spin injection efficiency η of spin-polarized electrons. αsc was reduced from 11.7% (and 10.5%) at 90 K to 7.31 % (and 5.93 %) at room temperature for d=3 (and d=10). And η was reduced from 39.5 % (and 35.5 %) at 90 K to 24.7 % (and
20.0 %) at room temperature for d=3 (and d=10).
关键词:
Spin injection
,
null
,
null
,
null
,
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Yanxue CHEN
,
Shouguo WANG
,
Liangmo MEI
,
Kungwon Rhie
,
Sangjin Byeun
材料科学技术（英文）
A series of CoFe (4 nm)/ Cu(X nm) Al (Y nm)/ CoFe(6 nm) samples have been prepared at room temperature. An exponential decay of the GMR (Giant Magnetoresistance) with Y was observed for fixed X=2nm. The characteristic decay parameter of Al is obtained to be about 0.26nm, which is rather close to 1 monolayer for Al. A coexistant state of GMR and AMR (anisotropic magnetoresistance) was observed when Y=2 nm. As the Cu spacer is replaced by Al layer, only AMR effect dominates. The experimental data further underline the important role played by the nonmagnetic spacers.
关键词:
CoFe
,
null
,
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