X.F.Rong and Z.Y.Qin College of Mechanical Engineering
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Taiyuan University of Technology
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Taiyuan 030024
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China
金属学报(英文版)
In this paper, a deposition feature of a SiC:H films deposited by a RF sputtering system and a effect on the hardness of the films with various deposition conditions are investigated, and the effects of the silicon on a C:H are studied. It follows from the results that the properties of hardness can be changed with the depositing conditions. An increase of silane in the gas phase allows to deposit a SiC:H having tetrahedral structure. The sets of deposition conditions by which the different types of a SiC:H films can be deposited are obtained.
关键词:
a SiC:H film
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