W Jager
金属学报(英文版)
The present understanding of diamond heteroepitaxy by bias-enhanced chemicalvapour deposition on technologically relevant substrate materials is briefly re vi(wed.First the early stages of diamond nucleation and the diamond film growth as wellas influences of various deposition conditions are described. Then the results of mi-croscopic investigations of the structure of interfaces and of grain boundaries aresummarized.
关键词:
diamond heteroepitaxy
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