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Effect of Bi₂O₃ Additive on the Microstructure and Dielectric Properties of BaTiO₃-Based Ceramics Sintered at Lower Temperature

Shunhua Wu Xuesong Wei Xiaoyong Wang Hongxing Yang Shunqi Gao

材料科学技术（英文）

High performance X8R dielectric ceramics were prepared by doping Bi₂O₃ to BaTiO₃-based ceramics. The effect of small amounts (≤1.2 mol%) of Bi₂O₃ additive on the microstructure and dielectric properties of BaTiO₃-based ceramics have been investigated. The Bi₂O₃, acting as a sintering additive, can effectively lower the sintering temperature of BaTiO₃-based ceramics from 1300 to 1130°C. The bulk density of BaTiO₃-based ceramics increased and reached the maximum value with increasing Bi₂O₃ content. The dielectric constant increased with increasing Bi₂O₃ until it reached the maximum value with 0.8 mol% Bi₂O₃ additive, and the dielectric loss decreased with increasing Bi₂O₃ content. Optimal dielectric properties of ε=2470, tanδ=0.011 and Δε/ε₂₅≤±9% (-55-150°C) were obtained for the BaTiO₃-based ceramics doped with 0.8 mol% Bi₂O₃ sintered at 1130°C for 6 h.

关键词: BaTiO₃-based ceramics , Bi2O3 , Dielectric properties , X8R