D.L. Ma and X.L. Mu Departmentof Physics
,
Liaoning University
,
Shenyang 110036
,
China
金属学报(英文版)
The propertiesof As+ implantedsilicon with anenergy160kev, differentdosesand anneal ing temperatures (500 700℃) were studied by means of x ray double crystaldiffraction( DCD) and ellipometricspectra ( ES) . Therockingcurvesof DCDweresimulated by multi layer modelof Dynamicaltheory,toobtainstrain distributionsasafunctionof depths. The1×1016 cm 2 annealed at600℃wasfoundthataepitaxiallayer wasformed . The ESresult provedtheseconclusions.
关键词:
