材料期刊网

Beryllium Surface Modified by B Ion Implantation

HU Renyuan YANG Yushi Institute of Low Energy Physics , Beijing Normal University , China. Beijing Research Institute of Materials and Technology , China.

材料科学技术（英文）

Beryllium is implanted with 100 keV, 2×10~(17) B/cm~2 and post-implanted sample is annealed at 650℃ for 1 h.Hardness measurement indicates that the hardness increases with implantation and can further be modified by post-implantation heat treatment. Profile measurement shows that implantation causes...

关键词: ion implantation , null , null