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WAN Farong XIAO Jimei YUAN Yi University of Science and Technology Beijing , Beijing , China Lecturer Department of Material Physics , University of Science and Technology Beijing , Beijing 100083 , China
金属学报(英文版)
A method together with a new formula were developed for measuring the vacancy migration energy on HVEM considering the effect of surface sink of specimen on point defects.The va- cancy migration energy may be calculated through the loop growth rate under electron irradiation at various temperatures.
关键词: electron irradiation damage , null , null