Chenguang GONG+
,
Fuchu SHEN
,
Biguang YE
,
Jian CHEN
,
Zhenjiang University
,
Hangzhou
,
310027
,
China
材料科学技术(英文)
This article discusses the silicon lattice damage induced during H-plasma in-situ cleaning and finds that the substrate temperature, plasma power, processing time, all affect the extent of the distortion of the surface and its curability.
关键词:
H-plasma cleaning
,
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