Taohua HUANG
,
Shengming ZHOU
,
Hao TENG
,
Hui LIN
,
Jun ZOU
,
Jianhua ZHOU
,
Jun WANG
材料科学技术（英文）
γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by highresolution X-ray diffraction and chemical etching. The results show that the as-grow...
关键词:
γ-LiAlO2 crystal
,
提拉法
,
化学腐蚀
,
透过光谱
Jun ZOU
,
Shengming ZHOU
,
Xia ZHANG
,
Fenglian SU
,
Xiaomin LI
,
Jun XU
材料科学技术（英文）
ZnO thin films were deposited on the substrates of (100) γ-LiAlO2 at 400, 550 and 700℃ using pulsed laser deposition (PLD) with the fixed oxygen pressure of 20 Pa, respectively. When the substrate temperature is 400℃, the grain size of the film is less than 1~$\mu$m observed by Leitz microscope and ...
关键词:
γ-LiAlO2
,
null
,
null
,
null
Jun ZOU
,
Shengming ZHOU
材料科学技术（英文）
About Φ45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films ...
关键词:
Crystal structure
,
null
,
null
,
null
