Hao DU
,
Jun GONG
,
Chao SUN
,
Rongfang HUANG
,
Lishi WEN
,
W.Y.Cheung
,
S.P.Wong
材料科学技术（英）
In this work, the prerequisite and mode of electromagnetic response of Al nanofilms to electromagnetic wave field was suggested. Reflectance, transmittance in infrared region and carrier density of the films was measured. With the carrier density of the films, the dependence of their plasma frequencies on the film thickness was obtained. On the other hand, the dependence of absorptance on the frequency of electromagnetic wave field was set up by using the measured reflectance and transmittance, which provided plasma frequency---film thickness relation as well. Similarity of both plasma frequency---film thickness relations proved plasma resonance as a mode of electromagnetic response in Al nanofilms.
关键词:
Aluminum nanofilm
,
null
,
null
Aiying WANG
,
Chao SUN
,
Rongfang HUANG
,
Lishi WEN
材料科学技术（英）
A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temperature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapor deposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filaments number, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filaments arrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate temperature region of 76mm×76mm with the temperature fluctuation no more than 5% could be obtained by a 80mm×80mm hot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100mm×100mm under the condition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for specially optimizing the hot filaments parameters to deposit uniform diamond film over large area by HFCVD.
关键词:
HFCVD
,
null
,
null
,
null
Meng CHEN
,
Xuedong BAI
,
Jun GONG
,
Chao SUN
,
Rongfang HUANG
,
Lishi WEN
材料科学技术（英）
Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that ail 110 films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10(-4) R cm and average transmittance of similar to 78% at wavelength of 400 similar to 700 nm have been achieved for the films on polyester at room temperature.
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