Christina Scheu
,
Min Gao
,
Manfred Rühle
材料科学技术（英文）
The bonding and electronic structure of Cu/(0001)Al2O3 and Cu/(1120)Al2O3 interfaces has been studied experimentally using spatially-resolved transmission electron energy loss spectroscopy. The specimen were prepared by depositing Cu on single-crystal a-Al2O3 substrates, which have been Ar+-ion sputter-cleaned prior to the growth of Cu. For both orientations of the a-Al2O3 substrate, atomically abrupt interfaces formed as determined by high-resolution transmission electron microscopy. The investigations of the interfacial Cu-L2,3, Al-L2,3 and O-K energy loss near-edge structures, which are proportional to the site- and angular-momentum-projected unoccupied density of states above the Fermi level, indicate the existence of metallic Cu-Al bonds at the Cu/Al2O3 interface independent of the substrate orientation.
关键词:
Electronic structure
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