Haiwu ZHENG
,
Junjie ZHU
,
Zhuxi FU
,
Bixia LIN
,
Xiaoguang LI
材料科学技术（英文）
3C-SiC films have been deposited on Si (111) substrates by the low-pressure vertical chemical vapor deposition (LPVCVD) with gas mixtures of SiH4, C3H8 and H2. The growth mechanism of SiC films can be obtained through the observations using field emission scanning electron microscope (FESEM). It is found that the growth process varies from surface control to diffusion control when the deposition temperature increases from 1270 to 1350℃. The X-ray diffraction (XRD) patterns show that the SiC films have good crystallinity and strong preferred orientation. The results of the high resolution transmission electron microscopy (HRTEM) image and the transmission electron diffraction (TED) pattern indicate a peculiar superlattice structure of the film. The values of the binding energy in the high resolution X-ray photoelectron spectra (XPS) further confirm the formation of SiC.
关键词:
3C-SiC films
,
null
,
null
Lijun HAN
,
Junjie ZHU
,
Lihong HAN
材料科学技术（英文）
The hysteresis unit system was introduced to mechanical structure behavior of the TiNi SMA joint based on the structure characteristics of the martensite variants in the joints, and some functions reflecting its inner structure characteristics and micro-behavior such as density function, phase transformation function were set up from micropoints. Finally, the structure behavior relationship and corresponding mathematic model reflecting the relationship among hysteresis strain, stress and phase transformation strain were provided, which could predict the stress-strain behavior of the TiNi SMA joint to large extent.
关键词:
TiNi shape memory alloy
,
null
,
null
