A. G. Liu
,
X.F. Wang
,
L.P. Wang
,
S. Y. Wang
,
B. Y. Tang and P.K. Chu 1) Advanced Welding Production Technology National Key Laboratory
,
HIT
,
Harbin 150001
,
China 2) Department of Physics and Material Science
,
City University of Hong Kong
,
83 Tat Chee Avenue
,
Kowloon
,
Hong Kang
,
China
金属学报(英文版)
Plasma immersion ion implantation (PIII), unrestricted by sight-light process, is considered a proper method for inner surface strengthening. Two-dimensional simulation oj inner surface PIII process of cylindrical bores were carried out in this paper using cold plasma fluid model, and influence of the bore's dimension on impact energy, retained dose and uniformity of inner surface were investigated.
关键词:
plasma immersion ion implantation
,
null
,
null
,
null
Xinchun CHANG
,
Jianqiang WANG
,
Nanlin SHI and Zhuangqi HU (State Key Lab. of RSA
,
Institute of Metal Research
,
Chinese Academy of Sciences
,
Shenyang 110015
,
China)Yijun DU
,
(Manufacturing Engineering Dept.
,
City University of Hong Kong
,
Kowloon
,
Hong Kong)
材料科学技术（英文）
An electrochemical sudece-treatment method has been used for modifying surface condition of large diameter CVD SiC (W core) fibers. The average tensile strength of the fibers was increased obviously from 2270.1 to 3002.9 MPa. X-ray photoelectron spectroscopy (XPS) studies on the treated fiber sudece indicate that a silicon-oxide film (primarily α-SiO2) has formed,accompanying the precipitation of amorphous carbon as the products of an anode oxidation reaction. In addition, the substantial increase of fiber strength through the electrochemical treatment may be described to the formation of oxide films and elimination of defects on the fiber surface.
关键词:
X.B. Tian
,
X.F. Wang
,
A.G. Liu
,
L.P. Wang
,
S. Y. Wang
,
B. Y. Tang and P. K. Chu 1)Advanced Welding Production & Technology National Key Laboratory
,
Harbin Institute of Technology
,
Harbin 150001
,
China 2)Department of Physics & Materials Science
,
City University of Hong Kong
,
China
金属学报(英文版)
The research on plasma immersion ion implantation has been conducted for a little over ten years. Much is needed to investigate including processing technlogy, plasma sheath dynamics, interaction of plasma and surface, etc. Of the processing methods elavated temperature technique is usually used in PIII to produce a thick modified layer by means of the thermal diffusion. Meanwhile plasma ion heating is more recently developed by Ronghua Wei et al[1]. Therefore the temeperature is a critical parameter in plasma ion processing. In this paper we present the theoretical model and analysize the effect of imlantation voltage, plasma density, ion mass,etc on the temperature rise.
关键词:
plasma immersion ion implantation
,
null
,
null
