L.P. Wang
,
B. Y Tang
,
X.B. Tian
,
YX.Leng
,
Q. YZhang
,
P.K.Chu
材料科学技术（英文）
Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films'on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample
关键词:
X.B. Tian
,
L.P. Wang
,
D. T.K.Kwok
,
B. Y Tang
,
P.K.Chu
材料科学技术（英文）
Plasma immersion ion implantation (PIII) is an excellent technique for the surf see modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the process and cannot be ignored. In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable.
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