X.B. Tian
,
X.F. Wang
,
A.G. Liu
,
L.P. Wang
,
S. Y. Wang
,
B. Y. Tang and P. K. Chu 1)Advanced Welding Production & Technology National Key Laboratory
,
Harbin Institute of Technology
,
Harbin 150001
,
China 2)Department of Physics & Materials Science
,
City University of Hong Kong
,
China
金属学报(英文版)
The research on plasma immersion ion implantation has been conducted for a little over ten years. Much is needed to investigate including processing technlogy, plasma sheath dynamics, interaction of plasma and surface, etc. Of the processing methods elavated temperature technique is usually used in PIII to produce a thick modified layer by means of the thermal diffusion. Meanwhile plasma ion heating is more recently developed by Ronghua Wei et al[1]. Therefore the temeperature is a critical parameter in plasma ion processing. In this paper we present the theoretical model and analysize the effect of imlantation voltage, plasma density, ion mass,etc on the temperature rise.
关键词:
plasma immersion ion implantation
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