{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"对高温超导限流器(HTSFCL)的国内外发展及研究现状进行了评述.高温超导限流器作为一种理想的故障限流器,它的研制涉及物理、材料学、电力电子、低温工程等多领域学科的知识与技术,是一项多学科技术的综合.目前在世界范围内有18个国家参与了高温超导限流器的研制,已完成挂网试运行和正在运行的高温超导限流器有19台,分布在7个国家.在中国现有3台处于试运行中,其中1台运行于世界上第一个超导变电站——甘肃白银超导变电站内.世界各国的研究现状显示,高温超导限流器的技术趋于成熟,然而大规模的商业化应用还面临着几个制约因素:超导线材的高昂价格,维持低温运行的成本,技术标准的制定,市场对高品质电力的需求等.只有降低超导材料的成本和高温超导限流器的运营成本,才会出现超导限流器的大规模应用,使之成为保障电力网络稳定安全运行的一个理想选择.","authors":[{"authorName":"张翠萍","id":"4d33f6e8-b750-44bc-b3d7-6d72abf40ae6","originalAuthorName":"张翠萍"}],"doi":"10.7502/j.issn.1674-3962.2017.05.03","fpage":"335","id":"a069ea94-2bff-4510-8b00-99a08d630937","issue":"5","journal":{"abbrevTitle":"ZGCLJZ","coverImgSrc":"journal/img/cover/中国材料进展.jpg","id":"80","issnPpub":"1674-3962","publisherId":"ZGCLJZ","title":"中国材料进展"},"keywords":[{"id":"c9d57f19-6145-41c3-97e3-9a0e0ca283cf","keyword":"高温超导故障限流器","originalKeyword":"高温超导故障限流器"},{"id":"efc558b0-4323-45dc-a56b-59508d49893f","keyword":"Bi2212超导带材","originalKeyword":"Bi2212超导带材"},{"id":"9832899a-0acf-465d-a3be-235fcff762f8","keyword":"YBCO涂层导体","originalKeyword":"YBCO涂层导体"},{"id":"dea41d04-13d2-413f-9c82-34089447d26a","keyword":"短路电流","originalKeyword":"短路电流"},{"id":"dcd0bc3f-0026-4768-b4ff-e991dd2b818c","keyword":"变电站","originalKeyword":"变电站"}],"language":"zh","publisherId":"zgcljz201705003","title":"高温超导限流器的研究进展","volume":"36","year":"2017"},{"abstractinfo":"我们成功制备了由高温超导Bi2212相和铁磁LCMO相两相复合的系列陶瓷样品.复合陶瓷样品的相分析表明无杂相生成,电阻温度曲线显示出铁磁性LCMO相对Bi2212相超导电性有显著抑制作用,随LCMO相含量增加,复合样品的超导转变温度逐渐降低,进而失去超导电性.在分析实验数据基础上,我们对铁磁性LCMO相对Bi2212相超导电性的影响进行了研究,并简要探讨了铁磁复合对Bi2212相超导电性抑制机理.","authors":[{"authorName":"张建武","id":"17ef7ffe-a71d-448f-9508-068fa8b6f02e","originalAuthorName":"张建武"},{"authorName":"贾旭","id":"d4a4fa22-a2d9-477b-a1f4-13996c2fd7e4","originalAuthorName":"贾旭"},{"authorName":"张权","id":"20d9025a-7a76-4609-9bc8-78dd5f72ac66","originalAuthorName":"张权"},{"authorName":"郑保忠","id":"6c4018cd-39dd-4250-87c0-604a2ecb078a","originalAuthorName":"郑保忠"},{"authorName":"王关生","id":"212ec2ee-db64-4222-a96b-0e75461c57f8","originalAuthorName":"王关生"},{"authorName":"浦其荣","id":"e3dc9214-51e9-410f-b728-7c5c795be9b1","originalAuthorName":"浦其荣"},{"authorName":"丁泽军","id":"72d3e490-cd0e-40d0-8ebb-e549c5ae954c","originalAuthorName":"丁泽军"}],"doi":"10.3969/j.issn.1000-3258.2005.z1.025","fpage":"519","id":"83364651-612f-4bc4-b9fc-d9a941384ae3","issue":"z1","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报 "},"keywords":[{"id":"6c26b8be-e111-4181-83f0-c567d5440a47","keyword":"超导电性","originalKeyword":"超导电性"},{"id":"23e3dd9f-5d7e-4b2e-8ae1-eb014276d653","keyword":"Bi2212","originalKeyword":"Bi2212"},{"id":"171c0758-d28b-450a-8d10-4d2d69b7b387","keyword":"复合物","originalKeyword":"复合物"}],"language":"zh","publisherId":"dwwlxb2005z1025","title":"铁磁复合对Bi2212相超导电性的抑制","volume":"27","year":"2005"},{"abstractinfo":"Bi-2212超导材料是最具高场应用前景的超导材料之一.经过近20年的研究,多芯Bi-2212超导线(带)材的临界电流密度(Jc)和临界工程电流密度(JE)已达到工程应用要求,并已在国外实现了产业化生产.综述了近年来Bi-2212超导材料在成材技术、载流性能、应用方面的研究进展,分析了该类材料成材技术中的关键问题,并探讨了进一步提高Bi-2212超导材料实用性能的途径.","authors":[{"authorName":"江林","id":"250b90db-a149-4dd5-9570-f13d804f1712","originalAuthorName":"江林"},{"authorName":"李成山","id":"2b653863-87e9-46c6-94d3-67d42d03a92d","originalAuthorName":"李成山"}],"doi":"","fpage":"80","id":"0fd0a17d-75f7-47e5-bef0-e00ccfe63e7d","issue":"11","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"7dfcd0ca-4955-4683-abfe-474a21a7c004","keyword":"Bi-2212超导材料","originalKeyword":"Bi-2212超导材料"},{"id":"e201d055-277a-4b75-9507-8e6fc5d9899d","keyword":"临界电流密度","originalKeyword":"临界电流密度"},{"id":"829d55d7-ea46-4d06-af8c-6ce6697e8548","keyword":"成材技术","originalKeyword":"成材技术"},{"id":"a3b3b5d4-4455-45c1-91eb-072c19893c8f","keyword":"研究进展","originalKeyword":"研究进展"}],"language":"zh","publisherId":"cldb200711020","title":"Bi-2212高温超导线(带)材研究进展","volume":"21","year":"2007"},{"abstractinfo":"在干净的Bi2212超导单晶样品中,使用四引线法进行输运性质的研究(电流方向沿CuO2层),发现当外磁场(⊥ab面)小于0.09T时电阻在正常态电阻的1‰时发生突变,电阻陡降了2到3个量级,对应着一级融化的发生;当外磁场超过临界点(CP)时,电阻随温度的变化曲线出现展宽,磁通液体到磁通固态的相变为二级相变. 我们认为临界点(CP)是晶体中缺陷的函数, 缺陷驱动Bi2212超导单晶的相变由一级向二级转变.","authors":[{"authorName":"王文虎","id":"4cd5bf2d-58fa-42f1-bf4e-45d39e5a9413","originalAuthorName":"王文虎"},{"authorName":"周玉琴","id":"a3f1ed52-73ae-4754-8e79-fd656aa3ac25","originalAuthorName":"周玉琴"},{"authorName":"郑萍","id":"2adbd442-e6f2-4be2-b5da-dd5732a027f5","originalAuthorName":"郑萍"},{"authorName":"陈兆甲","id":"aa7cdbcc-8c4f-4e65-83a3-a37059fc1ac1","originalAuthorName":"陈兆甲"}],"doi":"10.3969/j.issn.1000-3258.1999.06.007","fpage":"427","id":"d357568b-d863-42a2-9a66-e6f25f3860da","issue":"6","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报 "},"keywords":[{"id":"e1bcd2df-6132-4390-8f03-7a90ca0278c8","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"dwwlxb199906007","title":"Bi2212超导单晶中的一级融化相变的研究","volume":"21","year":"1999"},{"abstractinfo":"我们用高灵敏度的交流磁强计研究了Bi2212高温超导单晶的超导转变行为,发现对过搀杂的单晶样品,高温退火处理后立即测量,磁化表现为陡峭的超导转变.但是放置一段时间(数周)后,磁化曲线出现多个转变,并且再次高温退火能将其恢复为单一转变.说明即使是很均匀的单相,随着时间的推移,也会出现相分离现象.这一结果表明,在室温下,单晶中的氧原子仍然能够移动,而且倾向于重新排布形成不同的相.新形成的相的的磁化曲线有约瑟夫森弱联的特征,暗示新相是以小的团簇形势存在,团簇之间以约瑟夫森弱联耦合起来.另一方面,对最佳搀杂的单晶样品,没有观察到相分离现象.","authors":[{"authorName":"吴孝松","id":"fe5b5e05-0519-4e4c-a4bf-3904ff041312","originalAuthorName":"吴孝松"},{"authorName":"吕力","id":"74ffd05c-8a75-4ae8-b7b9-c206788e7f4b","originalAuthorName":"吕力"},{"authorName":"张殿林","id":"579ab972-69c3-41fd-836d-9e6e65e04633","originalAuthorName":"张殿林"},{"authorName":"宣毅","id":"99de5f82-3129-478d-8e12-76e9316b0341","originalAuthorName":"宣毅"},{"authorName":"陶宏杰","id":"9390194d-f1ff-4326-bc75-dd09c4257cec","originalAuthorName":"陶宏杰"}],"doi":"10.3969/j.issn.1000-3258.2003.z2.037","fpage":"486","id":"0352e0f0-fbe2-4acb-8c11-3ca2409f1217","issue":"z2","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报 "},"keywords":[{"id":"afd9694b-12b4-446f-b318-f788250f67dd","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"dwwlxb2003z2037","title":"室温下过搀杂Bi2212高温超导单晶的化学相分离","volume":"25","year":"2003"},{"abstractinfo":"我们通过气相输运插层化合反应成功制备了高温超导Bi2212相的碘插层化合物IxBi2212,进而制备出碘化汞插层化合物(HgI2)xBi2212.在此基础上,对碘化汞插层化合物(HgI2)xBi2212在丙酮溶液中进行超声剥落,成功制备出了高温超导Bi2212相的纳米粉体.我们对样品进行了表征,并就样品制备技术过程和纳米Bi2212相粉体的应用作了讨论.","authors":[{"authorName":"张建武","id":"bea31d49-f447-42bd-98c6-96e90790a0a4","originalAuthorName":"张建武"},{"authorName":"贾旭","id":"7214a56f-4a02-4906-97b8-1564fd75223c","originalAuthorName":"贾旭"},{"authorName":"张权","id":"2b54b80a-0f94-4d98-8512-b677d2d0a45d","originalAuthorName":"张权"},{"authorName":"郑保中","id":"60fd1cb1-daf3-4210-b5f8-418caf589327","originalAuthorName":"郑保中"},{"authorName":"浦其荣","id":"fc662f24-206d-4021-bb32-dd352079c8ea","originalAuthorName":"浦其荣"},{"authorName":"王忆","id":"cdf4bd94-8116-4552-a638-388d9e399a35","originalAuthorName":"王忆"},{"authorName":"张增明","id":"06c3a173-fbf4-497c-b518-a350549e2bdf","originalAuthorName":"张增明"},{"authorName":"丁泽军","id":"f8f0a387-0085-46ab-bebf-3234c859fce6","originalAuthorName":"丁泽军"}],"doi":"10.3969/j.issn.1000-3258.2005.z1.007","fpage":"417","id":"f09044ae-69d7-4886-8a16-aa48a72f6945","issue":"z1","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报 "},"keywords":[{"id":"b224df4f-f741-404a-ae61-55d428a2b499","keyword":"Bi2212","originalKeyword":"Bi2212"},{"id":"829ef6a0-962d-442d-a795-abfb66b1c7c1","keyword":"插层化合物","originalKeyword":"插层化合物"},{"id":"6344942c-202d-4a76-a3ae-abb63e3d2c18","keyword":"纳米粉体","originalKeyword":"纳米粉体"}],"language":"zh","publisherId":"dwwlxb2005z1007","title":"Bi2212相插层化合物的制备及其应用","volume":"27","year":"2005"},{"abstractinfo":"为了简化实验,达到节能、节材及节时的目的,利用灰色理论系统地研究了Bi-2212带材鼓泡的影响因素.根据灰色预测理论对原始实验数据处理,以熔化温度为基本量建立了Bi-2212带材鼓泡率的灰色预测模型(GM(1,1)),用残差模型修正后预测了不同熔化温度下带材的鼓泡率.同时定性分析了影响带材鼓泡的因素,发现带材鼓泡率随着碳含量、升温速率和熔化温度增加而增加,而随带厚增加而减少,并给出了鼓泡的控制方法.进一步利用灰色关联分析,定量分析了各因素对带材鼓泡的影响程度,得到了各因素影响鼓泡率的大小顺序为碳含量、带厚、升温速率、熔化温度.本文得到的定量分析结果与定性分析结果基本一致.","authors":[{"authorName":"江林","id":"176c35ff-1ee3-41da-a0cd-0e6b772a21ea","originalAuthorName":"江林"},{"authorName":"李成山","id":"6a0b748a-c734-4401-8eb6-aa1890380b4d","originalAuthorName":"李成山"},{"authorName":"赵军","id":"524e5e7d-754e-4104-814c-3e71d1c02b43","originalAuthorName":"赵军"},{"authorName":"郑会玲","id":"3b85bdaf-3c31-4912-baaf-3e5546c0393b","originalAuthorName":"郑会玲"}],"doi":"","fpage":"1728","id":"5e445c38-0ae9-4562-acf2-a314d48be22c","issue":"10","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"789cccd2-ee08-4077-acf9-e4900ab70d04","keyword":"Bi-2212带材","originalKeyword":"Bi-2212带材"},{"id":"06ed3cb9-42ac-469c-bb4e-f20bcf6de195","keyword":"鼓泡","originalKeyword":"鼓泡"},{"id":"e9400dbc-d7cd-4840-bc61-0e249764caa1","keyword":"灰色预测","originalKeyword":"灰色预测"},{"id":"3b67e6a3-804d-46e3-925a-d2865e772ad0","keyword":"灰色关联","originalKeyword":"灰色关联"}],"language":"zh","publisherId":"xyjsclygc200810009","title":"基于灰色理论的Bi-2212/Ag带材鼓泡","volume":"37","year":"2008"},{"abstractinfo":"将经常规热处理制备而成的Bi-2223/Ag超导带材在某一温度区间再进行后退火处理,以改善带材中的Bi-2223晶粒之间的连接状况,提高带材的超导性能.然后用四引线法测量样品的临界电流及其在磁场中的角度依赖性,用XRD和SEM分析样品的微观结构.实验结果表明,后退火处理提高了Bi-2223/Ag超导带材的临界电流,改善了带材在磁场中的性能.","authors":[{"authorName":"李明亚","id":"a1af1ab0-500a-4717-b75b-5ea5c766b0e1","originalAuthorName":"李明亚"},{"authorName":"韩征和","id":"10553fc3-cbb8-4d20-af39-f13022790b41","originalAuthorName":"韩征和"}],"doi":"","fpage":"288","id":"593ba9a8-b7bd-4244-ad6d-220729d6665c","issue":"z1","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"44bc4744-ac5f-45bc-a0b1-67121e816282","keyword":"Bi-2223/Ag超导带材","originalKeyword":"Bi-2223/Ag超导带材"},{"id":"7d50cc9e-ba57-470e-9a6f-1bb84d98b11d","keyword":"后退火处理","originalKeyword":"后退火处理"},{"id":"10348ca1-7b0b-4804-8d20-37e906de41aa","keyword":"临界电流","originalKeyword":"临界电流"}],"language":"zh","publisherId":"xyjsclygc2008z1074","title":"退火处理Bi-2223/Ag超导带材","volume":"37","year":"2008"},{"abstractinfo":"通过对少量Zn掺杂Bi2212单晶样品不同温度下的磁滞回线的测量,根据Bean临界态模型得到了样品在不同温度和磁场下的临界电流密度.发现不同温度下的临界电流密度与磁场的关系可以用Jc(H,T)=Jc(0,T)exp(-Hα)进行拟合,并且拟合参量α随温度的上升而增大,而在Pb掺杂和纯Bi2212单晶中α值基本上是不随温度变化的.将得到的Jc与Pb掺杂和纯Bi2212单晶的结果进行比较,发现在相同的温度和磁场下Zn掺杂样品具有最高的临界电流密度,表明少量Zn掺杂使得样品的临界电流密度得到提高.Zn掺杂对Bi2212体系临界电流密度的提高主要来源于在材料中引入了有效的涡旋钉扎中心,而Pb掺杂体系中Jc的提高是体系的层间耦合增强导致的结果.","authors":[{"authorName":"冯双久","id":"17ee612c-2879-4de3-a075-94571b79dd09","originalAuthorName":"冯双久"},{"authorName":"马杰","id":"3da9a79d-8f1e-4275-94f5-4c92ad187414","originalAuthorName":"马杰"},{"authorName":"李广","id":"c7ca5044-3b09-44ab-9f51-9edba0a2b647","originalAuthorName":"李广"},{"authorName":"时亮","id":"e2b2cc18-b9f3-4482-b134-d31f3dc2b0c9","originalAuthorName":"时亮"},{"authorName":"李毕友","id":"458e4610-71b7-4ea2-bfa7-68b041013d92","originalAuthorName":"李毕友"},{"authorName":"李晓光","id":"d224fd7e-f3ac-4391-9e04-be89af10c6d1","originalAuthorName":"李晓光"}],"doi":"10.3969/j.issn.1000-3258.2003.z1.010","fpage":"46","id":"189e6e47-b5fb-4e60-a83d-24fb4ea1bdc6","issue":"z1","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报 "},"keywords":[{"id":"bdf1f838-7534-4ece-a4ed-9aad57ee457f","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"dwwlxb2003z1010","title":"Zn掺杂对Bi2212单晶临界电流密度的影响","volume":"25","year":"2003"},{"abstractinfo":"通过输运测量得到了磁场垂直于晶体c轴时Bi2212单晶的不可逆线,发现在2 T附近发生变化趋势的改变,表明Josephson涡旋物质在此处可能存在相变或渡越行为.采用涡旋弯折扩展模型,分别讨论了低场/高温和高场/低温区域的不可逆线的表达式,并采用这些表达式很好拟合了实验得到的对应区域的不可逆线.","authors":[{"authorName":"冯双久","id":"1586cd4e-23d7-4a03-a65c-c61ab1431747","originalAuthorName":"冯双久"},{"authorName":"李广","id":"de5c3f87-12fc-4bea-87c8-9410f6ed6828","originalAuthorName":"李广"},{"authorName":"李晓光","id":"f899e120-d5a5-431d-b1b8-20967b50b6b9","originalAuthorName":"李晓光"}],"doi":"10.3969/j.issn.1000-3258.2005.04.013","fpage":"360","id":"437caa7e-dc76-4f97-82a0-7c70dbd0de05","issue":"4","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报 "},"keywords":[{"id":"09c9ce04-91d7-4767-a1c8-8d18062bb10b","keyword":"磁通钉扎","originalKeyword":"磁通钉扎"},{"id":"0c3fa872-9941-4335-bbd1-d1b1d6bdf560","keyword":"不可逆线","originalKeyword":"不可逆线"},{"id":"cad6789a-225f-4c01-8b36-5f4f29fbbad9","keyword":"Josephson涡旋","originalKeyword":"Josephson涡旋"}],"language":"zh","publisherId":"dwwlxb200504013","title":"Bi2212单晶本征钉扎的不可逆线","volume":"27","year":"2005"}],"totalpage":1268,"totalrecord":12672}