{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"利用脉冲激光淀积(PLD)技术在6H-SiC单晶衬底上制备了ZnO薄膜. 利用X射线衍射(XRD), 反射式高能电子衍射(RHEED)和同步辐射掠入射X射线衍射(SRGID)φ扫描等实验技术研究了ZnO薄膜的结构. 结果表明:在单晶6H-SiC衬底上制备的ZnO薄膜已经达到单晶水平, 不同入射角的SRGID结果, 显示了ZnO薄膜内部不同深度处a方向的晶格弛豫是不一致的, 从接近衬底界面处到薄膜的中间部分再到薄膜的表面处, a方向的晶格常数分别为0.3264、0.3272和0.3223nm. 通过计算得到ZnO薄膜的泊松比为0.504, ZnO薄膜与单晶6H-SiC衬底在平行于衬底表面a轴方向的实际晶格失配度为5.84%. <BR>","authors":[{"authorName":"孙柏","id":"9e3ea026-847d-46ba-aadc-c9f8de36cba9","originalAuthorName":"孙柏"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">锐</span><span style=\"color:red\">鹏</span>","id":"d78a7732-207a-42cd-b561-234bf4106827","originalAuthorName":"李锐鹏"},{"authorName":"赵朝阳","id":"cc178afb-87a6-45c2-8a64-3a2fcb351833","originalAuthorName":"赵朝阳"},{"authorName":"徐彭寿","id":"8809cc59-2b3a-4da9-abc3-3fc89bcc33ce","originalAuthorName":"徐彭寿"},{"authorName":"张国斌","id":"26e0a1e3-8ed9-4de5-ba65-361e9ec899db","originalAuthorName":"张国斌"},{"authorName":"潘国强","id":"eeebf0a9-2fc7-4807-9157-b7398f1aec9e","originalAuthorName":"潘国强"},{"authorName":"陈秀芳","id":"a9d64959-a4eb-4c77-ab64-19e962f081c9","originalAuthorName":"陈秀芳"},{"authorName":"徐现刚","id":"a26c6709-41d0-445f-9721-b66aa3e51fe8","originalAuthorName":"徐现刚"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2008.00753","fpage":"753","id":"ee5794f3-7f54-4051-9fe0-ff9f6200f76b","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"a68fef1a-35a1-4a21-a5ad-02f69c7013fc","keyword":"脉冲激光淀积","originalKeyword":"脉冲激光淀积"},{"id":"60eb0afc-0b1a-4292-a2bb-a03eef3d010d","keyword":" ZnO","originalKeyword":" ZnO"},{"id":"6e02aa8d-d7c7-49e5-9c36-ff3009e3bc83","keyword":" SiC","originalKeyword":" SiC"},{"id":"442bf460-fe65-440e-821f-77cb35817c51","keyword":" X-ray grazing incidence diffraction","originalKeyword":" X-ray grazing incidence diffraction"}],"language":"zh","publisherId":"1000-324X_2008_4_28","title":"6H-SiC单晶表面ZnO薄膜的制备及其结构表征","volume":"23","year":"2008"},{"abstractinfo":"利用脉冲激光淀积(PLD)技术在6H-SiC单晶衬底上制备了ZnO薄膜.利用X射线衍射(XRD),反射式高能电子衍射(RHEED)和同步辐射掠入射X射线衍射(SRGID)φ扫描等实验技术研究了ZnO薄膜的结构.结果表明:在单晶6H-SiC衬底上制备的ZnO薄膜已经达到单晶水平,不同入射角的SRGID结果,显示了ZnO薄膜内部不同深度处α方向的晶格弛豫是不一致的,从接近衬底界面处到薄膜的中间部分再到薄膜的表面处,α方向的晶格常数分别为0.3264、0.3272和0.3223nm.通过计算得到ZnO薄膜的泊松比为0.504,ZnO薄膜与单晶6H-SiC衬底在平行丁衬底表面α轴方向的实际晶格失配度为5.84%.","authors":[{"authorName":"孙柏","id":"318549a1-f260-493c-a45b-ecaee15f30f9","originalAuthorName":"孙柏"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">锐</span><span style=\"color:red\">鹏</span>","id":"a8f8d7d4-9588-4041-9a3c-7114ece1aeec","originalAuthorName":"李锐鹏"},{"authorName":"赵朝阳","id":"b9038cb2-d126-4de6-b1b8-4bdbaa5a3009","originalAuthorName":"赵朝阳"},{"authorName":"徐彭寿","id":"01ab8d46-0ad3-413f-952c-4ce0620e5b1f","originalAuthorName":"徐彭寿"},{"authorName":"张国斌","id":"ea205574-c7e5-4dcf-977a-93706f45bc14","originalAuthorName":"张国斌"},{"authorName":"潘国强","id":"a740eb02-1aea-4f22-891c-e1cd42e5a19c","originalAuthorName":"潘国强"},{"authorName":"陈秀芳","id":"bf844081-88e8-495f-96e7-b7db710337d3","originalAuthorName":"陈秀芳"},{"authorName":"徐现刚","id":"7b455f69-d66e-4b60-b673-b867b9a78cf6","originalAuthorName":"徐现刚"}],"doi":"10.3321/j.issn:1000-324X.2008.04.024","fpage":"753","id":"d8cc864f-a487-4abb-92e3-e6b6c08d3d3c","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"c5ccaed1-2244-46cf-b653-ad09ac1279ca","keyword":"脉冲激光淀积","originalKeyword":"脉冲激光淀积"},{"id":"38743487-aa3f-47d8-9fd1-eb1baa5c74dd","keyword":"氧化锌","originalKeyword":"氧化锌"},{"id":"1b4be0b0-46c0-4583-a2bc-ba2c106447a1","keyword":"碳化硅","originalKeyword":"碳化硅"},{"id":"df623abf-9570-4e77-84d9-67541f358918","keyword":"掠入射X射线衍射","originalKeyword":"掠入射X射线衍射"}],"language":"zh","publisherId":"wjclxb200804024","title":"6H-SiC单晶表面ZnO薄膜的制备及其结构表征","volume":"23","year":"2008"},{"abstractinfo":"介绍了通过测量暂态地电压来检测10 kV高压开关柜内部局部放电的基本原理及目前常用的检测仪器，分析了应用中存在的主要问题，并提出了改进方法。依据改进方法组建了便携式检测系统，包括双通道探头、高速采集卡及上位机处理软件等，实现了地电波波形的采集、显示、波形分析及信号时间差的确定。应用该系统进行局部放电源的定位，验证了该改进方法的有效性。","authors":[{"authorName":"邓雨荣","id":"5b0cdf92-0cb0-4edd-b387-23b280d5895b","originalAuthorName":"邓雨荣"},{"authorName":"田树军","id":"924b5631-34d1-47eb-bd2b-985aa4e8a06f","originalAuthorName":"田树军"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">锐</span><span style=\"color:red\">鹏</span>","id":"6d0b9dfb-1b4f-4bd3-882d-d1296e56b59b","originalAuthorName":"李锐鹏"},{"authorName":"胡华","id":"6c1a4d33-f467-46d6-bfdf-9acaebc750f5","originalAuthorName":"胡华"},{"authorName":"邢雅","id":"88ec4a61-1d0a-4095-8bf6-4bb138a8915c","originalAuthorName":"邢雅"},{"authorName":"<span style=\"color:red\">李</span>洪杰","id":"e26b6148-c801-471d-a322-80a93a1af187","originalAuthorName":"李洪杰"}],"doi":"","fpage":"93","id":"267a48ed-0f9a-49b4-85e8-39356c806d36","issue":"2","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"e0b970d4-f0a0-4422-8cc7-6f955c33abd2","keyword":"10kV开关柜","originalKeyword":"10kV开关柜"},{"id":"2f64ebb0-6626-4d32-b833-61b82fdfab78","keyword":"局部放电","originalKeyword":"局部放电"},{"id":"471e2243-ba62-4a4a-a41e-9398c68cb0e7","keyword":"地电波","originalKeyword":"地电波"}],"language":"zh","publisherId":"jycltx201402022","title":"一种改进的10kV开关柜局部放电TEV检测及定位技术","volume":"","year":"2014"},{"abstractinfo":"基于时谐电场的理论知识，以ANSYS为有限元求解工具，建立工频电压下的XLPE电缆终端数值计算模型。分析了介质介电常数和电阻率对电场分布的影响，分别计算了电缆终端无应力管、有空气隙、有金属微粒、钢针扎入这4种缺陷内部电场的分布情况，并研究了电场畸变与缺陷位置的对应关系。通过使用工频电压对4种电缆终端缺陷的局部放电进行测试，结果表明该电场模型能够对实际电缆终端进行仿真分析。","authors":[{"authorName":"张龙","id":"70b67cff-5b07-4627-b00b-1fdfb1ec9e52","originalAuthorName":"张龙"},{"authorName":"张伟","id":"bc7fb90f-f494-4e4f-a9a1-a9d7a755ae9e","originalAuthorName":"张伟"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">锐</span><span style=\"color:red\">鹏</span>","id":"8d55ff6b-67e6-412b-8d9f-c98732cb91a8","originalAuthorName":"李锐鹏"},{"authorName":"<span style=\"color:red\">李</span>洪杰","id":"fcc3bbca-7968-41a0-a073-3c3fd691178e","originalAuthorName":"李洪杰"}],"doi":"","fpage":"83","id":"3e3655cf-a87d-4bae-85e3-7f6f9db0bbbd","issue":"4","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"bd025f51-94e7-4971-a1bf-4016d0772f71","keyword":"电缆终端","originalKeyword":"电缆终端"},{"id":"7ed56fa7-38b9-40bf-b79d-dc5708efb1d4","keyword":"时谐电场","originalKeyword":"时谐电场"},{"id":"e65b4e80-ec4f-4781-81d8-b0424b494ff6","keyword":"典型缺陷","originalKeyword":"典型缺陷"},{"id":"e8d03499-4778-4e51-a2e6-470966d192da","keyword":"有限元方法","originalKeyword":"有限元方法"},{"id":"4ee162e0-cfff-48a9-9690-d406e57d8249","keyword":"局部放电","originalKeyword":"局部放电"}],"language":"zh","publisherId":"jycltx201404021","title":"10 kV XLPE电缆终端缺陷仿真与电场分析","volume":"","year":"2014"},{"abstractinfo":"介绍了通过测量暂态地电压(TEV)检测10 kV高压开关柜局部放电的基本原理.利用短时傅里叶变换(STFT)分析开关柜不同类型放电下局放TEV信号的时间频率特性,通过试验证明不同放电TEV信号在时频特性上存在明显差异.对信号STFT时频分析结果提取信号的时间中心tc、频率中心fc以及中心矩μc3个特征参数用以多源放电信号分离.结果表明:开关柜多源局部放电TEV信号能够在tc-fc-μc三维空间内实现信号聚类与分离,比基于傅里叶变换的传统分离方法具有更优的信号分离效果.","authors":[{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">锐</span><span style=\"color:red\">鹏</span>","id":"038c5edc-5b0e-4f49-90a3-0f3b3ad08881","originalAuthorName":"李锐鹏"},{"authorName":"余英","id":"b4b77e05-365c-41ad-a7c9-a597f9599e14","originalAuthorName":"余英"},{"authorName":"黄超","id":"f941d2d6-a5c9-4701-941f-d747fcb151eb","originalAuthorName":"黄超"},{"authorName":"朱正国","id":"8ee51019-eeba-4eb9-b5fa-ea0094a82ecb","originalAuthorName":"朱正国"},{"authorName":"张龙","id":"98090ae7-2ecb-41f2-a5b6-aa945d83573d","originalAuthorName":"张龙"},{"authorName":"<span style=\"color:red\">李</span>洪杰","id":"0833500f-9a2a-415a-97e3-561594d5505b","originalAuthorName":"李洪杰"}],"doi":"","fpage":"97","id":"ace34253-5e19-4d19-ab56-8fa48bae7a13","issue":"6","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"615bfe40-00df-4c78-8aba-e6adead76b1e","keyword":"10 kV开关柜","originalKeyword":"10 kV开关柜"},{"id":"efe347de-04d9-4ec1-a4fa-f4fd362e4dd6","keyword":"暂态对地电压","originalKeyword":"暂态对地电压"},{"id":"bfefb39e-100f-4709-be5a-e9d5415766d5","keyword":"多源局部放电","originalKeyword":"多源局部放电"},{"id":"76722852-8f36-44e3-b796-486f45e6602e","keyword":"时频分析","originalKeyword":"时频分析"},{"id":"7a252879-30a4-47f6-b2dd-46d47c8fd61c","keyword":"信号分离","originalKeyword":"信号分离"}],"language":"zh","publisherId":"jycltx201406024","title":"10kV开关柜多源局部放电信号分离方法","volume":"47","year":"2014"},{"abstractinfo":"采用时域有限差分法（FDTD），建立了与实际高压开关柜尺寸比例为1∶1的精确模型，以场分布图的形式表现局部放电电磁波在开关柜复杂内部结构条件下的传播过程，并通过对比内部电气组件前后的信号特征，分析组件对电磁信号的衰减和畸变作用，从而实现对典型开关柜外表面测量点的TEV分布特性的仿真研究。结果表明：测量点靠近开关柜表面的缝隙处时可以获得较大的TEV幅值，TEV幅值随测量点与局部放电源之间距离的增大而减小。该精确仿真模型比传统的简化仿真模型更能体现出开关柜表面TEV信号的分布特性。","authors":[{"authorName":"余英","id":"a50fce1a-c34f-46ce-bf66-2ff9cfc6c5d3","originalAuthorName":"余英"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">锐</span><span style=\"color:red\">鹏</span>","id":"2dd718df-62f8-42b8-a2f8-2ca9916aee70","originalAuthorName":"李锐鹏"},{"authorName":"黄超","id":"0e27dbb0-d7ef-4e44-bf0b-53ca2764db8e","originalAuthorName":"黄超"},{"authorName":"张炜","id":"a98f98e3-ef0a-403e-b8c0-ceb55bdcaf61","originalAuthorName":"张炜"},{"authorName":"张龙","id":"7c8e4050-1325-42f1-ad0e-539250679919","originalAuthorName":"张龙"},{"authorName":"杨宇琦","id":"04891af6-e481-452c-919d-2015cf169e82","originalAuthorName":"杨宇琦"}],"doi":"","fpage":"45","id":"dfe5e02a-d20f-42b1-9c63-d32d95154dd5","issue":"4","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"db3a6b28-1184-4e53-8742-0c74f593ea22","keyword":"高压开关柜","originalKeyword":"高压开关柜"},{"id":"cac1f7a4-7fee-47f3-8007-dd9d26b9b988","keyword":"暂态对地电压","originalKeyword":"暂态对地电压"},{"id":"1c8e9047-efbf-4dd4-af08-fa9c15ebca53","keyword":"局部放电","originalKeyword":"局部放电"},{"id":"01c43da9-21c3-4ee9-8d09-490d7e1f15ff","keyword":"时域有限差分法","originalKeyword":"时域有限差分法"}],"language":"zh","publisherId":"jycltx201504010","title":"基于时域有限差分法的开关柜表面TEV分布特性的研究","volume":"","year":"2015"},{"abstractinfo":"在衬底温度为1000℃条件下, 利用固源分子束外延(SSMBE)技术在Si衬底上生长3C-SiC单晶薄膜. RHEED结果显示在Si(111)上所生长的SiC薄膜为3C-SiC, 并与衬底的取向基本一致. 采用同步辐射掠入射X射线衍射(GID)技术并结合常规X射线衍射(XRD)研究了SiC薄膜内的应变和晶体质量. 常规衍射的联动扫描曲线得到薄膜处于双轴张应变状态. 3C-SiC薄膜和Si衬底的晶格失配和热膨胀系数失配是导致双轴张应变的原因. 根据不同角度的掠入射衍射Phi扫描的摇摆曲线结果, 发现薄膜晶体质量在远离SiC/Si界面区变好. 这是由于SiC薄膜中的缺陷随着远离界面逐渐减少的原因. GID和XRD的摇摆曲线结果表明薄膜中镶嵌块的倾斜大于扭转, 表明SiC薄膜在面内的晶格排列要比垂直方向更加有序. <BR>","authors":[{"authorName":"刘忠良","id":"13352119-500b-4533-98dc-1a7ac316bd34","originalAuthorName":"刘忠良"},{"authorName":"刘金锋","id":"ddbf8c00-9e75-4efc-a48a-a1c07a1998fd","originalAuthorName":"刘金锋"},{"authorName":"任<span style=\"color:red\">鹏</span>","id":"77d4a80d-bbe9-453b-8c98-a8fab35e36f0","originalAuthorName":"任鹏"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">锐</span><span style=\"color:red\">鹏</span>","id":"6c6e52f4-a1bb-4cfd-90a0-1d6fc10772b3","originalAuthorName":"李锐鹏"},{"authorName":"徐彭寿","id":"2b4726ae-cf4a-4ca9-9d7a-6d60e6ba3586","originalAuthorName":"徐彭寿"},{"authorName":"潘国强","id":"f0b03108-5181-4f18-8665-dc17a194ab00","originalAuthorName":"潘国强"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2008.00928","fpage":"928","id":"f5d7bea2-a51f-4691-9bd6-a5ff6ea467a4","issue":"5","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"11ba4e76-1567-44b6-badf-23bfe496c0b2","keyword":"X射线衍射","originalKeyword":"X射线衍射"},{"id":"90f02df0-5073-4a00-b40f-1d3efb424a02","keyword":" GID","originalKeyword":" GID"},{"id":"cf31b747-49a9-4d78-9250-d9de58ae4b9f","keyword":" Si","originalKeyword":" Si"},{"id":"1db135ea-493c-4d2f-a79d-385173784c31","keyword":" SiC","originalKeyword":" SiC"},{"id":"0ffcb340-8890-4fbb-8c3b-cbed975d22ca","keyword":" SSMBE","originalKeyword":" SSMBE"}],"language":"zh","publisherId":"1000-324X_2008_5_40","title":"3C-SiC/Si(111)的掠入射X射线衍射研究","volume":"23","year":"2008"},{"abstractinfo":"在衬底温度为1000℃条件下,利用固源分子束外延(SSMBE)技术在Si衬底上生长3C-SiC单晶薄膜.RHEED结果显示在Si(111)上所生长的SiC薄膜为3C-SiC,并与衬底的取向基本一致.采用同步辐射掠入射X射线衍射(GID)技术并结合常规X射线衍射(XRD)研究了SiC薄膜内的应变和晶体质量.常规衍射的联动扫描曲线得到薄膜处于双轴张应变状态.3C-SiC薄膜和Si衬底的晶格失配和热膨胀系数失配是导致双轴张应变的原因.根据不同角度的掠入射衍射Phi扫描的摇摆曲线结果,发现薄膜晶体质量在远离SiC/Si界面区变好.这是由于SiC薄膜中的缺陷随着远离界面逐渐减少的原因.GID和XRD的摇摆曲线结果表明薄膜中镶嵌块的倾斜大于扭转,表明SiC薄膜在面内的晶格排列要比垂直方向更加有序.","authors":[{"authorName":"刘忠良","id":"041e622b-0d29-4e67-827f-deda9f9df9a5","originalAuthorName":"刘忠良"},{"authorName":"刘金锋","id":"bdbada31-caa8-4cb2-9fd6-86de9e4a9f5d","originalAuthorName":"刘金锋"},{"authorName":"任<span style=\"color:red\">鹏</span>","id":"1b6597fa-4b42-4e33-a01c-8e2cc876b6db","originalAuthorName":"任鹏"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">锐</span><span style=\"color:red\">鹏</span>","id":"9343f4b8-2e04-45a0-b4ca-ea906f5e2375","originalAuthorName":"李锐鹏"},{"authorName":"徐彭寿","id":"a0046e03-53e8-46ab-8a57-d0de3f6c825b","originalAuthorName":"徐彭寿"},{"authorName":"潘国强","id":"bac665c9-55c7-4259-a2fd-787c1722cf83","originalAuthorName":"潘国强"}],"doi":"10.3321/j.issn:1000-324X.2008.05.013","fpage":"928","id":"275fca62-991f-43ed-940e-71cd3a2eeacd","issue":"5","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"64beea67-a5a7-4ab3-b232-5b9a3e8bf823","keyword":"X射线衍射","originalKeyword":"X射线衍射"},{"id":"e49b5d43-5070-4f53-9fa4-b4697ea203b8","keyword":"掠入射衍射","originalKeyword":"掠入射衍射"},{"id":"8b10571e-d44d-4d2e-bf41-ef6598ae7c70","keyword":"硅","originalKeyword":"硅"},{"id":"a5f9d402-04d9-412b-a8d1-320dc8414506","keyword":"碳化硅","originalKeyword":"碳化硅"},{"id":"b68e3b50-441d-4731-b186-f6abfd0f4b33","keyword":"固源分子束外延","originalKeyword":"固源分子束外延"}],"language":"zh","publisherId":"wjclxb200805013","title":"3C-SiC/Si(111)的掠入射X射线衍射研究","volume":"23","year":"2008"},{"abstractinfo":"<正> 一、为纪念<span style=\"color:red\">李</span>薰创办和主编《金属学报》,继承并发扬他毕生致力于科技进步的业绩,特设立《金属学报》纪念<span style=\"color:red\">李</span>薰奖金基金.二、基金来源是乐于赞助的科研单位、高等院校、企业、团体的捐赠.基金属于专款,全部存入银行,每年支取利息,直接用于奖励.","authors":[],"categoryName":"|","doi":"","fpage":"2","id":"53b5b4af-4a26-4ab3-9944-a079f1cdb6c6","issue":"2","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[],"language":"zh","publisherId":"0412-1961_1985_2_2","title":"《金属学报》纪念<span style=\"color:red\">李</span>薰奖金基金简章","volume":"21","year":"1985"},{"abstractinfo":"<正> 1983年3月20日凌晨,《金属学报》的创刊人、主编<span style=\"color:red\">李</span>薰同志和我们永别了。 <span style=\"color:red\">李</span>薰同志1913年11月20日出生于湖南省邵阳县。1937年以优异成绩通过湖南省试,留学英国Sheffield大学,先后获得哲学博士和冶金学的科学博士学位。1950年受中国科学院郭沫若院长聘,翌年毅然回归祖国。历任中国科学院金属研究所所长,中国科学院","authors":[],"categoryName":"|","doi":"","fpage":"1","id":"e58ce4aa-af81-477f-8509-f13a621fe343","issue":"2","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[],"language":"zh","publisherId":"0412-1961_1983_2_14","title":"深切悼念本刊创刊人、主编<span style=\"color:red\">李</span>薰同志","volume":"19","year":"1983"}],"totalpage":164,"totalrecord":1635}