{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用基于密度泛函理论的第一性原理的方法,对[100]方向镍间隙掺杂硅纳米线结构的稳定性和电子性质进行了计算。计算结果表明Ni原子更喜欢占据硅纳米线内部六角形间隙位置;掺杂体系费米能级附近的电子态密度来源于Ni3d态电子的贡献;同时发现不同构型的Ni掺杂硅纳米线,其带隙不同,且与未掺杂硅纳米线相比,带隙普遍减小。","authors":[{"authorName":"梁伟华","id":"3e73b67f-2a62-4bfc-9f03-7ab122231d98","originalAuthorName":"梁伟华"},{"authorName":"王秀丽","id":"2c036c7c-9527-45dc-aa98-797b1715c6b9","originalAuthorName":"王秀丽"},{"authorName":"丁学成","id":"00b2af48-ec81-4043-9cdf-8a1eb60e120e","originalAuthorName":"丁学成"},{"authorName":"褚立志","id":"edb6fe0e-ee15-433c-826e-f08c72e4c9dd","originalAuthorName":"褚立志"},{"authorName":"邓泽超","id":"19151cbe-ee71-4578-ab32-13fb94463bf8","originalAuthorName":"邓泽超"},{"authorName":"<span style=\"color:red\">郭</span><span style=\"color:red\">建</span><span style=\"color:red\">新</span>","id":"089f8a70-4538-4c0d-9ee5-b1ba986e83be","originalAuthorName":"郭建新"},{"authorName":"傅广生","id":"d5be071c-13a8-424c-9b14-daf6ef39886e","originalAuthorName":"傅广生"},{"authorName":"王英龙","id":"2a396473-08f9-417c-b2a1-f9c155472029","originalAuthorName":"王英龙"}],"doi":"","fpage":"1207","id":"4323ce73-6753-4f45-ac5f-d8beb0bed25c","issue":"7","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"54903b66-7ab1-41a8-9f76-ab5ee99977b3","keyword":"硅纳米线","originalKeyword":"硅纳米线"},{"id":"2613f740-f2eb-4b5d-94b2-3553b5dbceee","keyword":"掺杂","originalKeyword":"掺杂"},{"id":"694eef66-9963-4bb1-bf27-9648bb0a9f84","keyword":"电子性质","originalKeyword":"电子性质"},{"id":"a9fd9c5d-e99e-46dc-af56-0114f53c9aa6","keyword":"第一性原理","originalKeyword":"第一性原理"}],"language":"zh","publisherId":"gncl201107013","title":"镍间隙掺杂硅纳米线电子结构的研究","volume":"42","year":"2011"},{"abstractinfo":"应用磁控溅射法制备Ni-Al和Pt薄膜,溶胶-凝胶法制备P(VDF-TrFE)铁电共聚物薄膜,在SiO2/Si(001)衬底上首次构架了Pt/P( VDF-TrFE )/Ni-Al异质结电容器.X射线衍射(XRD)结果表明:Ni-Al薄膜为非晶结构,P(VDF-TrFE)薄膜具有较好的结晶质量.研究发现,在20 Hz测试频率下,Pt/P(VDF-TrFE)/Ni-Al电容器具有饱和的电滞回线,在90 V驱动电压下,剩余极化强度与矫顽场分别为7.6 μC/cm2和45.7 V.在外加电压为40 V时,薄膜的漏电流密度约为5.37×10-6A/cm2.漏电机制研究表明,Pt/P( VDF-TrFE )/Ni-Al电容器满足欧姆导电机制.铁电电容器经过109极化反转后没有发现明显的疲劳现象.","authors":[{"authorName":"闫会芳","id":"73ab0026-c134-4a0a-8e2a-a84a81b5df2d","originalAuthorName":"闫会芳"},{"authorName":"赵庆勋","id":"e4177d35-b3f3-421e-9042-d51c8d9dd955","originalAuthorName":"赵庆勋"},{"authorName":"付跃举","id":"06ccb0f1-90fe-4332-b140-d320be1a6288","originalAuthorName":"付跃举"},{"authorName":"刘卓佳","id":"848da14b-8b4e-41f1-960e-4f45e5da89ad","originalAuthorName":"刘卓佳"},{"authorName":"张婷","id":"c722ec69-53ae-49b6-9f4b-227a12e4aa2c","originalAuthorName":"张婷"},{"authorName":"<span style=\"color:red\">郭</span><span style=\"color:red\">建</span><span style=\"color:red\">新</span>","id":"b7eb814d-59ab-4120-9191-b4bf322d516e","originalAuthorName":"郭建新"},{"authorName":"任国强","id":"c66a7d93-d164-46ec-87d6-5db0f5bdef6f","originalAuthorName":"任国强"},{"authorName":"刘保亭","id":"9f13f940-b866-4baa-90d3-8dd69f85b14b","originalAuthorName":"刘保亭"}],"doi":"10.3969/j.issn.1007-4252.2012.01.015","fpage":"82","id":"653a667f-b0c1-42e3-b608-4b6a585aa725","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"73941a0a-dca0-4180-a5d6-4bf5ee72aa7e","keyword":"P(VDF-TrFE)","originalKeyword":"P(VDF-TrFE)"},{"id":"1d283566-529c-47d9-8581-276dfd1a8f27","keyword":"铁电薄膜","originalKeyword":"铁电薄膜"},{"id":"6ca1d1e4-ef95-43f9-98a3-cbcd306a8ed5","keyword":"非晶Ni-Al","originalKeyword":"非晶Ni-Al"},{"id":"a4f26bd5-78ae-4709-b751-fea4af9ef251","keyword":"溶胶-凝胶","originalKeyword":"溶胶-凝胶"}],"language":"zh","publisherId":"gnclyqjxb201201015","title":"以Ni-Al为底电极的P(VDF-TrFE)铁电电容器的结构与性能","volume":"18","year":"2012"},{"abstractinfo":"应用射频磁控溅射法在（001）Si衬底上制备了Cu（120nm）/Ta（5nm）/Ti-Al（5nm）/Si异质结,借助原子力显微镜（AFM）、X射线衍射（XRD）和四探针测试仪（FPP）等方法研究了Ta（5nm）/Ti-Al（5nm）集成薄膜用作Cu和Si之间阻挡层的结构和性能。研究发现,Cu/Ta/Ti-Al/Si异质结即使经受850℃高温退火后,样品的XRD图中也没有出现杂峰,表明样品各层之间没有发生明显的化学反应。相对于800℃退火的样品,850℃退火样品的表面均方根粗糙度急剧增大,同时方块电阻也增加了一个数量级,表明Ta（5nm）/Ti-Al（5nm）集成薄膜在850℃时,阻挡性能完全失效。由于Ta和Cu之间存在良好粘附性以及Ti-Al强的化学稳定性,Ta（5nm）/Ti-Al（5nm）集成薄膜在800℃以下具有良好的阻挡性能。","authors":[{"authorName":"任国强","id":"edb5e0e2-e5bb-4c08-b062-4048124b88d2","originalAuthorName":"任国强"},{"authorName":"邢金柱","id":"8e64be0f-2a42-4311-8f99-56f394d75e65","originalAuthorName":"邢金柱"},{"authorName":"李晓红","id":"886646f6-0fca-40db-a983-0432b2ec106a","originalAuthorName":"李晓红"},{"authorName":"<span style=\"color:red\">郭</span><span style=\"color:red\">建</span><span style=\"color:red\">新</span>","id":"620e6f57-2534-48db-a3fe-d57e32c90d9f","originalAuthorName":"郭建新"},{"authorName":"代秀红","id":"e7e2343c-1be2-43ef-99a5-c491ef87ef1e","originalAuthorName":"代秀红"},{"authorName":"杨保柱","id":"29b03ea2-f5d1-49ea-ba1f-1dbbb765cdc3","originalAuthorName":"杨保柱"},{"authorName":"赵庆勋","id":"22c1081f-6a4b-454f-85c2-2ee951e5fdad","originalAuthorName":"赵庆勋"}],"doi":"","fpage":"462","id":"3918b0b0-9fe1-4012-93f5-4c4fb724e63a","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"d4180e63-f7ca-4d98-98f5-4894596c5200","keyword":"Cu互连","originalKeyword":"Cu互连"},{"id":"a2b0afe1-d110-461f-a0e2-990656452d05","keyword":"阻挡层","originalKeyword":"阻挡层"},{"id":"d16874d2-6696-4186-b730-c2a771d029b5","keyword":"Ta/Ti-Al","originalKeyword":"Ta/Ti-Al"},{"id":"5aa35f0f-23ce-47a1-a51e-aa8901bd0ae2","keyword":"射频磁控溅射","originalKeyword":"射频磁控溅射"}],"language":"zh","publisherId":"gncl201204015","title":"用于Cu互连的Ta/Ti-Al集成薄膜的结构和阻挡性能","volume":"43","year":"2012"},{"abstractinfo":"本文以He-Ne 632.8nm激光为写入光,在非同时读出条件下,实验研究了e偏振光写入Cr:KNSBN晶体两波耦合过程中信号光和泵浦光的透射光强随时间的变化,以及单束泵浦光的透射光强随时间的变化,实验结果表明,泵浦光损失的能量几乎全部转移到了信号光方向,基本不存在散射光;并以二值化图像作为物在晶体内进行了图像存储实验,其再现图像清晰,信噪比高,没有观察到扇形光的影响.","authors":[{"authorName":"<span style=\"color:red\">郭</span>庆林","id":"1992f58e-db4e-431d-91d0-d63afb84c5eb","originalAuthorName":"郭庆林"},{"authorName":"魏丽静","id":"6eeffe1d-0648-4d66-a565-e2d5d0de960f","originalAuthorName":"魏丽静"},{"authorName":"苏红<span style=\"color:red\">新</span>","id":"62e99ce3-3dcf-4ffe-b197-ccc719792a54","originalAuthorName":"苏红新"},{"authorName":"<span style=\"color:red\">郭</span><span style=\"color:red\">建</span><span style=\"color:red\">新</span>","id":"9f6995ff-7e3a-4d8c-b605-727b682e950e","originalAuthorName":"郭建新"},{"authorName":"张金平","id":"0f906067-0851-45d9-9da2-b4d4c220fee4","originalAuthorName":"张金平"},{"authorName":"怀素芳","id":"47a10a9c-4131-44f4-9cf7-256b8cecfa2f","originalAuthorName":"怀素芳"},{"authorName":"傅广生","id":"a9d0f8ce-f27a-4e94-a28a-840d58938578","originalAuthorName":"傅广生"}],"doi":"10.3969/j.issn.1000-985X.2006.04.032","fpage":"812","id":"8644f512-c79b-4a73-b320-2fe25b57be47","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"f8809dce-fd0a-4b2e-954d-70147f37226b","keyword":"Cr:KNSBN晶体","originalKeyword":"Cr:KNSBN晶体"},{"id":"98f40a81-bf4d-4baf-8541-ba2b378088dd","keyword":"两波耦合","originalKeyword":"两波耦合"},{"id":"10aa46c4-0264-481c-9b60-243ed2d23336","keyword":"光扇效应","originalKeyword":"光扇效应"},{"id":"17d3e0ea-b24e-4869-a19c-52bb1c3f108b","keyword":"图像存储","originalKeyword":"图像存储"}],"language":"zh","publisherId":"rgjtxb98200604032","title":"Cr:KNSBN晶体两波耦合及其图像存储","volume":"35","year":"2006"},{"abstractinfo":"采用Ni-Nb薄膜作为导电阻挡层,以La0.5 Sr0.5 CoO3 (LSCO)为底电极,构建了LSCO/Pb(Zr0.4,Ti0.6)O3(PZT)/LSCO异质结电容器.使用X射线衍射仪和铁电测试仪对其进行结构表征和性能测试.实验发现:Ni-Nb薄膜为非晶结构,PZT薄膜结晶状况良好.LSCO/PZT/LSCO电容器在5V外加电压测试下,电滞回线具有良好的饱和趋势,剩余极化强度Pr为35.5 μC/cm2,矫顽电压Vc为1.42V,电容器具有良好的抗疲劳特性和保持特性.","authors":[{"authorName":"赵庆勋","id":"45e96020-c625-45cc-92b4-f5bdb70c502c","originalAuthorName":"赵庆勋"},{"authorName":"齐晨光","id":"7768847a-912a-4834-91ac-dbb2443a43b8","originalAuthorName":"齐晨光"},{"authorName":"贾冬梅","id":"536c0eb1-1c83-4909-b676-003439f0fa22","originalAuthorName":"贾冬梅"},{"authorName":"付跃举","id":"cec18f30-2c2a-4b86-84c6-dc6a30f7d0cd","originalAuthorName":"付跃举"},{"authorName":"<span style=\"color:red\">郭</span><span style=\"color:red\">建</span><span style=\"color:red\">新</span>","id":"1a0f6927-c226-4bf8-a5cd-9c4372745a50","originalAuthorName":"郭建新"},{"authorName":"刘保亭","id":"ec1245dc-9cd5-4f18-a410-c7b378caf1be","originalAuthorName":"刘保亭"}],"doi":"","fpage":"282","id":"7817868f-be3f-44d3-9eab-7631d0f75b26","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"fb9a8b55-de2b-475a-bd59-ca598398bc77","keyword":"Ni-Nb阻挡层","originalKeyword":"Ni-Nb阻挡层"},{"id":"ad1be79e-7df8-4713-a2aa-4caeab033ecf","keyword":"Pb(Zr0.4,Ti0.6)O3","originalKeyword":"Pb(Zr0.4,Ti0.6)O3"},{"id":"caffe3e8-5b3f-4fe1-92ce-3864ae60122a","keyword":"La0.5Sr0.5CoO3","originalKeyword":"La0.5Sr0.5CoO3"}],"language":"zh","publisherId":"rgjtxb98201302018","title":"含Ni-Nb阻挡层的硅基Pb(Zr0.4,Ti0.6)O3电容器的制备及铁电性能研究","volume":"42","year":"2013"},{"abstractinfo":"传统的方法很难直接在硅衬底上制备外延的氧化物铁电电容器,本实验采用生长在硅衬底上的外延SrTiO3为模板,直接生长了SrRuO3/PbZr0.5Ti0.5O3/SrRuO3电容器异质结,并对其结构及性能进行了研究.X射线衍射表明所制备的SrRuO3/PbZr0.5Ti0.5O3/SrRuO3异质结实现了在硅衬底上的外延生长.在5V测试电压下,铁电电容器的剩余极化强度和矫顽电压分别为19.6μC/cm2和0.8V.当极化翻转次数达到1010时,铁电电容器的极化强度没有明显的衰减,表明SrRuO3/PbZr0.5Ti0.5O3/SrRuO3电容器具有良好的抗疲劳性能.","authors":[{"authorName":"朱慧娟","id":"a2502ed1-6dc9-4a81-8163-529f91fa86d6","originalAuthorName":"朱慧娟"},{"authorName":"刘保亭","id":"5cceb833-ef52-44e1-a948-3437a5995ebb","originalAuthorName":"刘保亭"},{"authorName":"代秀红","id":"469b0197-97c2-4061-9e48-c3dc04954753","originalAuthorName":"代秀红"},{"authorName":"<span style=\"color:red\">郭</span><span style=\"color:red\">建</span><span style=\"color:red\">新</span>","id":"445b472c-c8f9-4901-afcd-805b4e938234","originalAuthorName":"郭建新"},{"authorName":"周阳","id":"088a9a93-6578-4151-8ef9-3c88ead9fd1c","originalAuthorName":"周阳"}],"doi":"","fpage":"428","id":"a2afb500-e564-48be-b5ac-8c7fcda421a3","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"8b764e10-2f9a-4ea3-a605-f47754316000","keyword":"硅衬底","originalKeyword":"硅衬底"},{"id":"6fde684f-8490-4841-afef-8afde39ae75d","keyword":"外延生长","originalKeyword":"外延生长"},{"id":"92c10a68-126f-4a8b-9e82-7e6f6b494c36","keyword":"SrRuO3/PbZr0.5Ti0.5O3/SrRuO3异质结","originalKeyword":"SrRuO3/PbZr0.5Ti0.5O3/SrRuO3异质结"}],"language":"zh","publisherId":"rgjtxb98201303010","title":"硅基外延SrRuO3/PbZr0.5Ti0.5O3/SrRuO3电容器的结构和性能研究","volume":"42","year":"2013"},{"abstractinfo":"利用基于密度泛函理论的第一性原理,对不同直径和浓度Au掺杂Si纳米线的态密度和磁性进行了计算.结果表明:杂质Au的形成能随Si纳米线直径的增大和掺杂浓度的降低而下降,这说明直径越小的Si纳米线掺杂越困难,杂质浓度越高的Si纳米线越不稳定.其磁性是由于Au d轨道和Si p轨道的p-d耦合而产生的；改变Au的掺杂浓度可改变Si纳米线的带隙,也改变了其磁矩的大小.","authors":[{"authorName":"梁伟华","id":"4425b987-f974-49bb-9729-0d5b0d73046e","originalAuthorName":"梁伟华"},{"authorName":"赵亚军","id":"f269ea28-a191-49d5-8142-e5bdfd5d570c","originalAuthorName":"赵亚军"},{"authorName":"王秀丽","id":"ac8bcf80-24b5-4bb6-8aa2-241ffaf14013","originalAuthorName":"王秀丽"},{"authorName":"<span style=\"color:red\">郭</span><span style=\"color:red\">建</span><span style=\"color:red\">新</span>","id":"377dcaa3-f43b-485d-bdeb-a8f79eccf5ee","originalAuthorName":"郭建新"},{"authorName":"傅广生","id":"efe3ac8f-d314-467d-aa11-a07d864ba207","originalAuthorName":"傅广生"},{"authorName":"王英龙","id":"9f5d43e9-acdd-4e0b-aa5b-a029c36a0ad7","originalAuthorName":"王英龙"}],"doi":"","fpage":"390","id":"cf17791c-c4b2-4901-8c3b-e7a28f98d410","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"5395bc3c-7ddf-4f1c-9336-8f5844505c79","keyword":"Si纳米线","originalKeyword":"Si纳米线"},{"id":"891f2ec3-de7f-47be-bc15-ec4a4d6100ae","keyword":"掺杂浓度","originalKeyword":"掺杂浓度"},{"id":"f2858aca-fb34-4bcf-a42c-ff87e0489971","keyword":"磁性","originalKeyword":"磁性"},{"id":"59483ec0-43d1-4e69-bd73-3f3de5ea5ab5","keyword":"电子结构","originalKeyword":"电子结构"}],"language":"zh","publisherId":"rgjtxb98201202026","title":"Au掺杂浓度对Si纳米线电子结构和磁性的影响","volume":"41","year":"2012"},{"abstractinfo":"研究了一种新型含硼低碳高锰合金并讨论了热处理对其组织的影响。研究表明,合金铸态组织由铁素体基体（少量残留奥氏体）、M2B硼化物、M23（C,B）6以及Ti（C,N）相组成,且硼化物呈断续网状分布;高温淬火后基体并没有发生马氏体相变,基体中残留奥氏体的含量增加,硼化物因部分溶解体积分数减少,且硼化物的分布更加弥散。从热力学角度分析了热处理对合金组织的影响。","authors":[{"authorName":"刘俊友","id":"3e52b48e-31bf-4c11-b03b-f40046d50d8f","originalAuthorName":"刘俊友"},{"authorName":"<span style=\"color:red\">郭</span><span style=\"color:red\">建</span><span style=\"color:red\">新</span>","id":"d8e2206c-38b0-47a1-9d31-123f43c93589","originalAuthorName":"郭建新"},{"authorName":"刘杰","id":"9ebb06a4-9be3-48d7-8ebf-16de9f211549","originalAuthorName":"刘杰"}],"doi":"","fpage":"78","id":"c1f53747-e3ec-4069-8e04-a0730646651b","issue":"12","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"61653a5b-1961-4413-9ef6-81658270782e","keyword":"含硼低碳高锰合金","originalKeyword":"含硼低碳高锰合金"},{"id":"2e00153e-681c-4943-9ffd-1f62890bc4b7","keyword":"热处理","originalKeyword":"热处理"},{"id":"e81d5899-1755-4790-8f02-8682b8969806","keyword":"组织","originalKeyword":"组织"},{"id":"c5668e49-2d50-451b-ad78-e604fdfcb56e","keyword":"热力学","originalKeyword":"热力学"}],"language":"zh","publisherId":"jsrclxb201112016","title":"热处理对新型含硼低碳高锰合金组织影响的热力学分析","volume":"32","year":"2011"},{"abstractinfo":"本文通过求解物理空间中的层流扩散火焰面方程,建立火焰面数据库.相比于求解混合物分数空间的层流火焰面模型,该模型不仅简单,且易于耦合详细组分输运模型、Soret效应和气相辐射等影响因素.同时,求出的温度及组分浓.度分布可以整理成各种不同参数的函数,提高了数据库使用的灵活性.本文对这种<span style=\"color:red\">新</span>的层流扩散火焰面模型进行详细的分析,并考察组分输运模型、Soret效应、气相辐射以及化学反应机理等因素对计算结果的影响.","authors":[{"authorName":"赵平辉","id":"6ced2d30-7c86-46c4-841a-e4a59eaa9259","originalAuthorName":"赵平辉"},{"authorName":"叶桃红","id":"054b5337-2365-4bfe-8e63-2349cfe8c4db","originalAuthorName":"叶桃红"},{"authorName":"陆阳","id":"654cf953-7440-4d05-a5cb-c1aff357bfdc","originalAuthorName":"陆阳"},{"authorName":"陈义良","id":"68d3a7c3-1e37-4bdc-afea-65195bf3bb79","originalAuthorName":"陈义良"}],"doi":"","fpage":"1069","id":"cdc1651d-045e-4e8e-b2e5-807f343351e6","issue":"6","journal":{"abbrevTitle":"GCRWLXB","coverImgSrc":"journal/img/cover/GCRWLXB.jpg","id":"32","issnPpub":"0253-231X","publisherId":"GCRWLXB","title":"工程热物理学报   "},"keywords":[{"id":"a273d440-10c5-4f4d-8085-4d62849f635f","keyword":"层流火焰面模型","originalKeyword":"层流火焰面模型"},{"id":"69d8e936-6fa5-4318-9807-65a9d46362d2","keyword":"扩散火焰","originalKeyword":"扩散火焰"},{"id":"1ede6821-cb51-43be-a3c5-acb923c38058","keyword":"组分输运","originalKeyword":"组分输运"},{"id":"68b00efd-d2fd-4284-bf41-74ea6ecd31fd","keyword":"Soret效应","originalKeyword":"Soret效应"},{"id":"46274521-15e7-40eb-8ddf-91587ae2dd15","keyword":"化学反应机理","originalKeyword":"化学反应机理"}],"language":"zh","publisherId":"gcrwlxb201006044","title":"一种<span style=\"color:red\">新</span>的层流扩散火焰面<span style=\"color:red\">建</span>库模型的研究","volume":"31","year":"2010"},{"abstractinfo":"笔者根据几年来的阴极电泳涂装线<span style=\"color:red\">建</span>线经验,介绍了新建阴极电泳涂装线的清洗、<span style=\"color:red\">建</span>槽、试生产运行调试及日常管理的关键问题及注意事项.","authors":[{"authorName":"金荣刚","id":"f6f64836-f4c3-49b6-8785-d2532d9fc868","originalAuthorName":"金荣刚"}],"doi":"10.3969/j.issn.0253-4312.2003.01.009","fpage":"23","id":"ee884b3d-3ddb-44a8-8f4c-25da97c5e7e2","issue":"1","journal":{"abbrevTitle":"TLGY","coverImgSrc":"journal/img/cover/TLGY.jpg","id":"61","issnPpub":"0253-4312","publisherId":"TLGY","title":"涂料工业   "},"keywords":[{"id":"b64ef97a-ed4c-478e-bb1d-f86e946d4f72","keyword":"阴极电泳涂装线","originalKeyword":"阴极电泳涂装线"},{"id":"64e2ebc2-8483-4f22-8b18-c51548fee0d9","keyword":"清洗","originalKeyword":"清洗"},{"id":"50438fd5-ec56-42ee-ba02-5fecd4b115aa","keyword":"<span style=\"color:red\">建</span>槽","originalKeyword":"建槽"},{"id":"944199e4-aa81-4af5-a3f0-5651ad6905e8","keyword":"运行调度","originalKeyword":"运行调度"},{"id":"0d6f45ce-50c4-4751-a9e0-b66611f4ff8c","keyword":"日常管理","originalKeyword":"日常管理"}],"language":"zh","publisherId":"tlgy200301009","title":"阴极电泳涂装线<span style=\"color:red\">建</span>线方案","volume":"33","year":"2003"}],"totalpage":668,"totalrecord":6675}