{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"本文利用牛血清白蛋白(BSA)作为表面活性剂,在水相中成功合成了具有复合结构的<span style=\"color:red\">Ag2Se-Se</span>纳米粒子.该复合纳米粒子具有较好的分散性.整个实验过程均在室温下进行,合成方法简单、可控且重复性好.结合傅立叶变换红外光谱(FTIR)和紫外吸收光谱(UV-vis)的结果,分析了纳米粒子复合结构的形成过程;采用高分辨透射电子显微镜(HRTEM)结合选区电子衍射(SAED)和能谱分析(EDS),对制备的复合粒子形貌和成份组成进行了分析测定;利用X射线粉末衍射(XRD)分析了复合粒子的晶体结构和相组成.采用BSA修饰制备得到的纳米粒子生物相容性好,可以在生物医学领域中得到广泛应用.","authors":[{"authorName":"孔毅飞","id":"02b90ee7-6e95-47e4-9d8e-ad2a69eecdb4","originalAuthorName":"孔毅飞"},{"authorName":"高峰","id":"e9815e04-36a8-4110-b2ad-9512cb99675a","originalAuthorName":"高峰"},{"authorName":"崔大祥","id":"04feb0db-9e65-409f-8389-adaadd73f647","originalAuthorName":"崔大祥"},{"authorName":"黄鹏","id":"84713ed7-c356-4024-a4ed-5eaa661feadf","originalAuthorName":"黄鹏"},{"authorName":"贺蓉","id":"8489b57d-2425-4846-b574-07bfa0a660f9","originalAuthorName":"贺蓉"},{"authorName":"李娜","id":"89008b4e-fde9-4ef0-b84c-3f75a13124a0","originalAuthorName":"李娜"}],"doi":"","fpage":"641","id":"a2b5a80e-e40e-4981-befb-946602376007","issue":"5","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"661da723-f862-486b-b131-e45cea4e87dc","keyword":"牛血清白蛋白","originalKeyword":"牛血清白蛋白"},{"id":"1e432a1d-104f-450c-84c4-1df912075b99","keyword":"<span style=\"color:red\">Se</span>","originalKeyword":"Se"},{"id":"f515a779-2b07-45c6-9741-cbad9d116f65","keyword":"<span style=\"color:red\">Ag2Se</span>","originalKeyword":"Ag2Se"},{"id":"335483af-23f4-470e-93ee-eba21d719c2f","keyword":"复合纳米粒子","originalKeyword":"复合纳米粒子"}],"language":"zh","publisherId":"clkxygc201005002","title":"牛血清白蛋白辅助合成<span style=\"color:red\">Ag2Se-Se</span>复合纳米粒子","volume":"28","year":"2010"},{"abstractinfo":"A number of X-ray patterns and electrical conductivities of five different samples of <span style=\"color:red\">Ag-Cu-Se</span> system have been measured. These samples of <span style=\"color:red\">Ag-Cu-Se</span> system: (<span style=\"color:red\">Ag</span>1.188, Cu0.812)<span style=\"color:red\">Se</span>, (<span style=\"color:red\">Ag</span>,Cu)<span style=\"color:red\">Se</span>; (<span style=\"color:red\">Ag</span>0.9, Cu1.1 )<span style=\"color:red\">Se</span>, (<span style=\"color:red\">Ag</span>0.8, Cu1.2)<span style=\"color:red\">Se</span> and (<span style=\"color:red\">Ag</span>0.6, Cu1.4)<span style=\"color:red\">Se</span> were prepared under controlled conditions. Analysis of the experimental data shows that Frenkel defects are predominated in (<span style=\"color:red\">Ag</span>1.188, Cu0.812)<span style=\"color:red\">Se</span> and Schottky defects prevailing in the other samples. The activation energy values △E calculated from the linear behaviour of electrical conductivity a with temperature (0-90℃) reveal that the impurity content increases in the direction of (<span style=\"color:red\">Ag</span>,Cu)<span style=\"color:red\">Se</span>→(<span style=\"color:red\">Ag</span>0.8,Cu1.2 )<span style=\"color:red\">Se</span>","authors":[{"authorName":"S.N.Motafa and S.R.Selim(Chemistry Department","id":"60765499-307e-4f8e-825c-6d4d060d0663","originalAuthorName":"S.N.Motafa and S.R.Selim(Chemistry Department"},{"authorName":" Al-Azhar University","id":"4cc72be8-e6fa-4b10-9391-94730f150298","originalAuthorName":" Al-Azhar University"},{"authorName":" Nasr City. Cairo. Egypt)F.M.Ismail(Inorganic Chemistry Department","id":"34dc5b23-c3ed-43b4-adef-73e294e45492","originalAuthorName":" Nasr City. Cairo. Egypt)F.M.Ismail(Inorganic Chemistry Department"},{"authorName":" National Research Center. Dokki. Cairo. Egypt)","id":"743e7bf6-86bb-4b34-92ed-828762c58654","originalAuthorName":" National Research Center. Dokki. Cairo. Egypt)"}],"categoryName":"|","doi":"","fpage":"53","id":"c17c5e2d-5b59-4781-b1f9-fda535d86c19","issue":"1","journal":{"abbrevTitle":"CLKXJSY","coverImgSrc":"journal/img/cover/JMST.jpg","id":"11","issnPpub":"1005-0302 ","publisherId":"CLKXJSY","title":"材料科学技术（英文）"},"keywords":[],"language":"en","publisherId":"1005-0302_1995_1_8","title":"X-ray Diffraction and Electrical Conductivity Studies on <span style=\"color:red\">Ag-Cu-Se</span> System","volume":"11","year":"1995"},{"abstractinfo":"采用放电等离子烧结(SPS)方法制备<span style=\"color:red\">Ag</span>掺杂四元<span style=\"color:red\">Ag-Bi-Se</span>-Te合金,并分析研究其热电性能.结果表明:掺杂<span style=\"color:red\">Ag</span>后,合金AgxBi(<span style=\"color:red\">2</span>-x)<span style=\"color:red\">Se</span>0.3Te2.7(x=0.005～0.04)的Seebeck系数均为负值,说明材料属于n-型半导体;当温度大约在428.0K时,x=0.04合金的Seebeck系数绝对值(|a|)出现最大值,其值为1.80×10-4V·K-1,比三元合金Bi<span style=\"color:red\">2Se</span>0.3Te2.7的最大值增大约16%;材料电导率随<span style=\"color:red\">Ag</span>含量的增加而下降.如果采用相同方法制备且成分按(Bi<span style=\"color:red\">2</span>Te3)0.9-(Bi<span style=\"color:red\">2</span>-xAgxSe3)0.1(x=0～0.4)设计的材料热扩散系数进行估算,当温度在477.0 K时,合金AgxBi(<span style=\"color:red\">2</span>-x)<span style=\"color:red\">Se</span>0.3Te2.7(x=0.04)的ZT值出现最大值,其值为0.75,比典型三元合金Bi<span style=\"color:red\">2Se</span>0.3Te2.7的最大值增大约0.09.","authors":[{"authorName":"修伟杰","id":"49ed1e05-754d-497b-8ebe-b7d8d0bb2d62","originalAuthorName":"修伟杰"},{"authorName":"应鹏展","id":"de34da66-a981-45bf-a207-434baa8bb2e2","originalAuthorName":"应鹏展"},{"authorName":"崔教林","id":"f11e5a7e-c667-4d47-90e4-1b1829a0fb23","originalAuthorName":"崔教林"},{"authorName":"薛海峰","id":"27446ecd-8f44-47ed-8c08-3171665fb9de","originalAuthorName":"薛海峰"}],"doi":"","fpage":"334","id":"8777118e-0283-42db-bda6-ba857195d2a2","issue":"2","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"08e344c7-ea6f-41de-9129-02efa1ba40f5","keyword":"四元n-型<span style=\"color:red\">Ag-Bi-Se</span>-Te合金","originalKeyword":"四元n-型Ag-Bi-Se-Te合金"},{"id":"72eaad92-4d7a-4e3e-b9a8-f041cfd83dfc","keyword":"<span style=\"color:red\">Ag</span>掺杂","originalKeyword":"Ag掺杂"},{"id":"dd169ce9-81e8-447e-a87d-a9e7f90fd16c","keyword":"放电等离子烧结(SPS)","originalKeyword":"放电等离子烧结(SPS)"},{"id":"cfd382a2-c0f5-4da7-a7ff-070dfb7aba87","keyword":"电学性能","originalKeyword":"电学性能"}],"language":"zh","publisherId":"xyjsclygc200802033","title":"SPS法制备n-型<span style=\"color:red\">Ag</span>掺杂四元<span style=\"color:red\">Ag-Bi-Se</span>-Te 合金及其热电性能","volume":"37","year":"2008"},{"abstractinfo":"采用熔融-淬火-放电等离子烧结方法制备了两种不同掺杂方式的Na单掺和Na/<span style=\"color:red\">Se</span>共掺p型AgSbTe<sub><span style=\"color:red\">2</span></sub>多晶块体材料(Ⅰ: 掺杂元素以过量形式添加AgNa<sub>0.01</sub>SbTe<sub><span style=\"color:red\">2</span></sub>, AgNa<sub>0.01</sub>SbTe<sub><span style=\"color:red\">2</span></sub><span style=\"color:red\">Se</span><sub>0.04</sub>; Ⅱ: 掺杂元素以置换对应元素形式添加<span style=\"color:red\">Ag</span><sub>0.99</sub>Na<sub>0.01</sub>SbTe<sub><span style=\"color:red\">2</span></sub>, <span style=\"color:red\">Ag</span><sub>0.99</sub>Na<sub>0.01</sub>SbTe<sub>1.96</sub><span style=\"color:red\">Se</span><sub>0.04</sub>). 研究了Na单掺、Na/<span style=\"color:red\">Se</span>共掺及不同掺杂方式对材料电、热输运性能的影响规律. 通过比较不同掺杂方式样品的电、热传输性能确定了最佳的Na/<span style=\"color:red\">Se</span> 掺杂方式: Na置换<span style=\"color:red\">Ag</span>, <span style=\"color:red\">Se</span>置换Te并结合适当的<span style=\"color:red\">Se</span>过量加入. 由于Na掺杂对Seebeck 系数的提高及<span style=\"color:red\">Se</span>掺杂对电导率和热导率的优化, <span style=\"color:red\">Ag</span><sub>0.99</sub>Na<sub>0.01</sub>SbTe<sub>1.96</sub><span style=\"color:red\">Se</span><sub>0.04 </sub>化合物<em>ZT</em>最大值在620 K达到1.4, 较未掺杂AgSbTe<sub><span style=\"color:red\">2</span></sub>化合物提高约17%.","authors":[{"authorName":"杜保立","id":"a1e847ec-4c39-43ba-a2d0-90c6e3b5661d","originalAuthorName":"杜保立"},{"authorName":"李涵","id":"fc6aa9bf-d475-461d-98df-e783b745c709","originalAuthorName":"李涵"},{"authorName":"唐新峰","id":"a2c24b9f-694e-4684-9816-1e257e4a5963","originalAuthorName":"唐新峰"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2011.00680","fpage":"680","id":"5a5791d6-71c4-495a-93c1-9613638c1a05","issue":"7","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"3b310656-9efd-4a6a-9090-c8e2020bfa3d","keyword":"AgSbTe<sub><span style=\"color:red\">2</span></sub>","originalKeyword":"AgSbTe<sub>2</sub>"},{"id":"4138bc67-73c3-48c8-bcf3-dbc2154d7782","keyword":" thermoelectric property","originalKeyword":" thermoelectric property"},{"id":"f1ac01b1-161e-4602-8410-c9c599d23b56","keyword":" <span style=\"color:red\">Se</span>","originalKeyword":" Se"},{"id":"b9a1f624-1dbc-4bca-b620-2a26590c3369","keyword":" Na","originalKeyword":" Na"},{"id":"95da7265-7f4a-410b-babc-2f8203527059","keyword":" doping","originalKeyword":" doping"}],"language":"zh","publisherId":"1000-324X_2011_7_20","title":"Na/<span style=\"color:red\">Se</span>掺杂p-型AgSbTe<sub><span style=\"color:red\">2</span></sub>化合物热电性能研究","volume":"26","year":"2011"},{"abstractinfo":"采用熔融-淬火-放电等离子烧结方法制备了两种不同掺杂方式的Na单掺和Na/<span style=\"color:red\">Se</span>共掺P型AgSbTe<span style=\"color:red\">2</span>多晶块体材料(I:掺杂元素以过量形式添加AgNa0.01SbTe<span style=\"color:red\">2</span>,AgNa0.01SbTe<span style=\"color:red\">2Se</span>0.04;II:掺杂元素以置换对应元素形式添加<span style=\"color:red\">Ag0.99Na0.01SbTe2</span>,<span style=\"color:red\">Ag0.99Na0.01SbTe1.96Se</span>0.04).研究了Na单掺、Na/<span style=\"color:red\">Se</span>共掺及不同掺杂方式对材料电、热输运性能的影响规律.通过比较不同掺杂方式样品的电、热传输性能确定了最佳的Na/<span style=\"color:red\">Se</span>掺杂方式:Na置换<span style=\"color:red\">Ag</span>,<span style=\"color:red\">Se</span>置换Te并结合适当的<span style=\"color:red\">Se</span>过量加入.由于Na掺杂对Seebeck系数的提高及<span style=\"color:red\">Se</span>掺杂对电导率和热导率的优化,<span style=\"color:red\">Ag0.99Na0.01SbTe1.96Se</span>0.04化合物ZT最大值在620 K达到1.4,较未掺杂AgSbTe<span style=\"color:red\">2</span>化合物提高约17%.","authors":[{"authorName":"杜保立","id":"c942893b-1b51-4085-8d2c-5e7d002f3cf9","originalAuthorName":"杜保立"},{"authorName":"李涵","id":"aba23b6e-7119-4fd9-a674-7d5108407cf5","originalAuthorName":"李涵"},{"authorName":"唐新峰","id":"f3a5f836-c2ee-4041-8bd6-2f926478981e","originalAuthorName":"唐新峰"}],"doi":"10.3724/SP.J.1077.2011.00680","fpage":"680","id":"8c6f5e07-333b-4997-866b-253ecc7c20cb","issue":"7","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"86a5a6e7-f212-47cf-9597-c45235354f66","keyword":"AgSbTe<span style=\"color:red\">2</span>","originalKeyword":"AgSbTe2"},{"id":"3e445b08-5880-496c-afbd-dc79ac9d0132","keyword":"热电性能","originalKeyword":"热电性能"},{"id":"6d7c9073-49d2-4b61-a723-a9ea722dfa44","keyword":"<span style=\"color:red\">Se</span>","originalKeyword":"Se"},{"id":"6c2d809b-c4fc-4c65-b0c5-68cb0a91fb7b","keyword":"Na","originalKeyword":"Na"},{"id":"26add186-8a05-4876-88cb-c7eb88ca5797","keyword":"掺杂","originalKeyword":"掺杂"}],"language":"zh","publisherId":"wjclxb201107002","title":"Na/<span style=\"color:red\">Se</span>掺杂P-型AgSbTe<span style=\"color:red\">2</span>化合物热电性能研究","volume":"26","year":"2011"},{"abstractinfo":"The heat treatment of AgGaSe<span style=\"color:red\">2</span> has been studied on the basis of the microphase diagram and differential thermal analysis results. The effect of heat treatment on the optical quality of the crystal has also been investigated. It is found that both quenching and annealing treatments could improve the optical quality of the crystal, but annealing of AgGaSe<span style=\"color:red\">2</span> in presence of <span style=\"color:red\">Ag2Se</span> at 800 degrees C is more effective. After the heat treatment, the IR absorption and frequency doubling efficiency are improved considerably. An energy conversion efficiency of 8.2% has been obtained in the frequency doubling of a CO<span style=\"color:red\">2</span> laser at 10.6 mu m with the annealed AgGaSe<span style=\"color:red\">2</span> crystal.","authors":[],"categoryName":"|","doi":"","fpage":"94","id":"abc00d7c-64e7-46a1-8950-6606b7f7e883","issue":"1","journal":{"abbrevTitle":"MCAP","id":"cab5d78b-7a98-41be-9fd0-2436587efd7f","issnPpub":"0254-0584","publisherId":"MCAP","title":"Materials Chemistry and Physics"},"keywords":[{"id":"83e0aafa-9605-4b8e-bde4-81e263902b85","keyword":"heat treatment;AgGaSe<span style=\"color:red\">2</span> single crystals;annealing;optical quality;growth","originalKeyword":"heat treatment;AgGaSe2 single crystals;annealing;optical quality;growth"}],"language":"en","publisherId":"0254-0584_1997_1_1","title":"Heat treatment and its effects on the optical quality of AgGaSe<span style=\"color:red\">2</span> single crystals","volume":"50","year":"1997"},{"abstractinfo":"对球磨时间不同的Cu<span style=\"color:red\">2Se</span>、In<span style=\"color:red\">2Se</span>,和Ga<span style=\"color:red\">2Se</span>3混合粉末进行热压烧结制备CIGS靶材,发现在球磨时间较短时靶材出现分层,随着球磨时间延长分层缺陷消失.由此考察了粉末在球磨过程中发生的物理化学变化及其对分层的影响.结果表明:Cu<span style=\"color:red\">2Se</span>、Jn<span style=\"color:red\">2Se</span>3和Ga<span style=\"color:red\">2Se</span>3三种硒化物粉末在球磨过程中发生机械合金化反应形成黄铜矿相Cu(In,Ga)<span style=\"color:red\">Se2</span>(CIGS).随着球磨时间的延长,黄铜矿相结构CuInSe<span style=\"color:red\">2</span>(CIS)首先在Cu-<span style=\"color:red\">Se</span>二元化合物表面产生,并随着Ga原子的扩散逐步形成CIGS四元相.当球磨时间达到48 h时,粉末由黄铜矿相CIGS和少量Ga<span style=\"color:red\">2Se</span>3组成.由于Cu<span style=\"color:red\">2</span>-xSe与CIGS晶体结构相近,因此通过外延反应的方式有效促进了CIGS的合成.球磨过程中Cu-<span style=\"color:red\">Se</span>二元相的消失和CIGS相的形成有助于抑制烧结过程中分层缺陷的产生.","authors":[{"authorName":"李晓龙","id":"8a868384-5efb-4727-8112-1af4d39caa11","originalAuthorName":"李晓龙"},{"authorName":"赵明","id":"b0c1d23a-ab86-49fb-b69e-a5d5ae2277ae","originalAuthorName":"赵明"},{"authorName":"庄大明","id":"5a07b1d1-4759-4f74-b46c-317286c5d495","originalAuthorName":"庄大明"},{"authorName":"巩前明","id":"048349c1-ed8d-448a-9e9a-d131d2a335f7","originalAuthorName":"巩前明"},{"authorName":"曹明杰","id":"d50553e1-8001-406c-9934-bfa7c8db2f09","originalAuthorName":"曹明杰"},{"authorName":"欧阳良琦","id":"a8ddf989-48f7-455e-bd1c-0fbc538211a8","originalAuthorName":"欧阳良琦"},{"authorName":"郭力","id":"85f6f2aa-8870-4823-be0d-9294891c984c","originalAuthorName":"郭力"},{"authorName":"孙汝军","id":"caa17555-d840-449a-a370-96f44a3abfc6","originalAuthorName":"孙汝军"},{"authorName":"高泽栋","id":"0a91bceb-4c83-40b5-8b4f-a801ac493838","originalAuthorName":"高泽栋"}],"doi":"10.11901/1005.3093.2015.090","fpage":"1","id":"abb3e4bc-ab7f-4a59-9efa-b0c4fa3b633e","issue":"1","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"1efb352c-41cb-45a1-a505-487272f37ef3","keyword":"无机非金属材料","originalKeyword":"无机非金属材料"},{"id":"ea00e372-ed44-4c45-9258-c62aad957747","keyword":"铜铟镓硒","originalKeyword":"铜铟镓硒"},{"id":"8b09c593-9ac8-4d09-a8f5-3df9a055b5ea","keyword":"机械合金化","originalKeyword":"机械合金化"},{"id":"e0775b5c-e93d-4cc3-8a7d-8f4dcf93cb9f","keyword":"热压烧结","originalKeyword":"热压烧结"},{"id":"49cfdf1d-5640-4135-bc84-07f0c35e23ba","keyword":"靶材","originalKeyword":"靶材"}],"language":"zh","publisherId":"clyjxb201601001","title":"Cu<span style=\"color:red\">2Se</span>、In<span style=\"color:red\">2Se</span>3、Ga<span style=\"color:red\">2Se</span>3混合球磨过程中的Cu(In,Ga)<span style=\"color:red\">Se2</span>形成机制研究","volume":"30","year":"2016"},{"abstractinfo":"在乙二胺溶液中室温下合成了三元化合物Cu0.8<span style=\"color:red\">Ag</span>1.2S和Cu0.5<span style=\"color:red\">Ag1.5Se</span>纳米晶. 将<span style=\"color:red\">Ag2</span>O和Cu<span style=\"color:red\">2</span>O用聚甲醛还原为<span style=\"color:red\">Ag</span>和Cu,与单质S和<span style=\"color:red\">Se</span>反应得到产物. 用X射线粉末衍射、透射电子显微镜、X射线光电子能谱测试技术进行了结构表征,同时对产物形成机理进行了探讨.","authors":[{"authorName":"叶世勇","id":"53f61666-67b6-4126-aef4-1e0203a5fa72","originalAuthorName":"叶世勇"},{"authorName":"班惠昭","id":"16c61899-19af-4d0f-9111-632b012c9be1","originalAuthorName":"班惠昭"},{"authorName":"李敏","id":"e1b2f9d5-7431-4844-aaca-a0688caff090","originalAuthorName":"李敏"},{"authorName":"邵名望","id":"66ebbc85-7cd4-46ff-b244-12490bab0d2f","originalAuthorName":"邵名望"},{"authorName":"叶寅","id":"d7920898-a004-412d-981d-eb44f5d56373","originalAuthorName":"叶寅"},{"authorName":"潘世炎","id":"9738f430-39fe-4615-a0e3-47b8b9d4ee3e","originalAuthorName":"潘世炎"}],"doi":"10.3969/j.issn.1000-0518.2008.09.022","fpage":"1101","id":"2da519d3-667d-44c3-9ef3-299991d0e034","issue":"9","journal":{"abbrevTitle":"YYHX","coverImgSrc":"journal/img/cover/YYHX.jpg","id":"73","issnPpub":"1000-0518","publisherId":"YYHX","title":"应用化学"},"keywords":[{"id":"aea1f8fd-8088-40bc-b129-6a172f513e62","keyword":"X射线光电子能谱","originalKeyword":"X射线光电子能谱"},{"id":"6fb37780-1d6b-41ff-ba9f-f02a4c0fee00","keyword":"银铜硫三元化合物","originalKeyword":"银铜硫三元化合物"},{"id":"a797d97d-6f12-4d63-bb85-404b6a190908","keyword":"银铜硒三元化合物","originalKeyword":"银铜硒三元化合物"}],"language":"zh","publisherId":"yyhx200809022","title":"室温合成Cu0.8<span style=\"color:red\">Ag</span>1.2S 和 Cu0.5<span style=\"color:red\">Ag1.5Se</span> 纳米晶及X射线光电子能谱表征","volume":"25","year":"2008"},{"abstractinfo":"采用连续离子层吸附反应(SILAR)法,分别用含有<span style=\"color:red\">Se2</span>-,Bi3+和Sb3+的离子溶液作为独立的阴、阳离子前驱溶液,以载玻片为衬底,在室温下沉积出致密且具有镜面金属光泽的Bi<span style=\"color:red\">2Se3-Sb2Se</span>3薄膜材料.为了改善薄膜样品的结晶状态,对其进行了退火处理.用AFM观察了薄膜样品的表面形貌,用XRD分析了退火前后薄膜样品的结晶状态.结果表明:薄膜样品经200℃较低温度下退火处理4 h以后,薄膜的结晶状态由无定形态转化为多晶态,其平均晶粒尺寸为30 nm～40 nm.","authors":[{"authorName":"陈多金","id":"2f9ad807-c52e-44b0-a1a0-3e3acd14fdcd","originalAuthorName":"陈多金"},{"authorName":"雷天民","id":"5dfdaab2-e69c-42bc-b64e-9f8c858083b4","originalAuthorName":"雷天民"},{"authorName":"卢刚","id":"fa51c882-b38a-4486-b9d7-023beba72c73","originalAuthorName":"卢刚"}],"doi":"","fpage":"343","id":"2f686ce9-dfbe-41b9-b54c-cfa7713517d6","issue":"z2","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"03127e7b-b41f-46a4-935e-8511b716e9f1","keyword":"SILAR法","originalKeyword":"SILAR法"},{"id":"d9f8feac-5064-4524-8f4d-920560af5f08","keyword":"Bi<span style=\"color:red\">2Se3-Sb2Se</span>3","originalKeyword":"Bi2Se3-Sb2Se3"},{"id":"f74d7459-9fb7-42cb-ac79-a4e8d6c5d006","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"8cbbd37b-58d3-427a-9002-281a32ea8f0e","keyword":"表征","originalKeyword":"表征"}],"language":"zh","publisherId":"xyjsclygc2006z2084","title":"纳米晶Bi<span style=\"color:red\">2Se3-Sb2Se</span>3薄膜的SILAR法制备及表征","volume":"35","year":"2006"},{"abstractinfo":"采用连续离子层吸附反应(SILAR)法,分别用含有<span style=\"color:red\">Se2</span>-,Bi3+和Sb3+的离子溶液作为独立的阴、阳离子前驱溶液,以载玻片为衬底,在室温下沉积出致密且具有镜面金属光泽的Bi<span style=\"color:red\">2Se3-Sb2Se</span>3薄膜材料.为了改善薄膜样品的结晶状态,对其进行了退火处理.用AFM观察了薄膜样品的表面形貌,用XRD分析了退火前后薄膜样品的结晶状态.结果表明:薄膜样品经200℃较低温度下退火处理4 h以后,薄膜的结晶状态由无定形态转化为多晶态,其平均晶粒尺寸为30 nm～40 nm.","authors":[{"authorName":"陈多金","id":"905f6f6a-4535-419b-bb69-204400f49aed","originalAuthorName":"陈多金"},{"authorName":"雷天民","id":"c2bd5a69-1d13-4130-bd7d-db2e42d39c6d","originalAuthorName":"雷天民"},{"authorName":"卢刚","id":"fbe04d37-1b01-4f3a-b06d-ca8766afb1e6","originalAuthorName":"卢刚"}],"doi":"","fpage":"343","id":"cea43dec-b8c3-4fdd-83fb-ac8fda56f3d4","issue":"z1","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"0046c372-5d4c-4b09-ae4c-d03fdb8bb743","keyword":"SILAR法","originalKeyword":"SILAR法"},{"id":"def30477-3ddd-4413-94da-974123c2cf99","keyword":"Bi<span style=\"color:red\">2Se3-Sb2Se</span>3","originalKeyword":"Bi2Se3-Sb2Se3"},{"id":"29b3ba36-f75d-4766-9969-a9cebb8e471f","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"df509eca-9be3-4dd8-8290-05becc0edbca","keyword":"表征","originalKeyword":"表征"}],"language":"zh","publisherId":"xyjsclygc2006z1084","title":"纳米晶Bi<span style=\"color:red\">2Se3-Sb2Se</span>3薄膜的SILAR法制备及表征","volume":"35","year":"2006"}],"totalpage":8162,"totalrecord":81611}