{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"提出了部分耗尽<span style=\"color:red\">SOI</span> <span style=\"color:red\">MOSFET</span>物理模型,<span style=\"color:red\">SOI</span> <span style=\"color:red\">MOSFET</span>可以看作体硅<span style=\"color:red\">MOSFET</span>和双极晶体管的结合,模型通过详细地分析<span style=\"color:red\">SOI</span>器件在各工作区域的工作机理得出,并提取出了相应的模型参数.用本模型得出的模拟数据与器件模拟数据进行了对比,取得了很好的一致性.","authors":[{"authorName":"李瑞贞","id":"8ae99d37-0d6b-40cd-837a-b3cb3758d439","originalAuthorName":"李瑞贞"},{"authorName":"韩郑生","id":"0dd1619b-0cd5-46da-a8b2-05229653e463","originalAuthorName":"韩郑生"}],"doi":"10.3969/j.issn.1007-4252.2006.01.016","fpage":"67","id":"f64f0a40-50bb-48b2-be53-b8666ecdeff4","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"1a8c7786-e006-43fa-8330-a110105dfa31","keyword":"<span style=\"color:red\">SOI</span> <span style=\"color:red\">MOSFET</span>","originalKeyword":"SOI MOSFET"},{"id":"f1e69396-54e6-41bb-b4eb-b9ca2e080e2c","keyword":"物理模型","originalKeyword":"物理模型"},{"id":"3501fe90-20f1-45fb-8437-3c00fc5d8542","keyword":"参数提取","originalKeyword":"参数提取"}],"language":"zh","publisherId":"gnclyqjxb200601016","title":"基于BSIM3V3的部分耗尽<span style=\"color:red\">SOI</span> <span style=\"color:red\">MOSFET</span>解析模型","volume":"12","year":"2006"},{"abstractinfo":"重点介绍器件进入纳米尺度后出现的 <span style=\"color:red\">MOSFET</span>/<span style=\"color:red\">SOI</span>器件的新结构,如超薄 <span style=\"color:red\">SOI</span>器件、双栅 <span style=\"color:red\">MOSFET</span>、 FinFET和应变沟道等 <span style=\"color:red\">SOI</span>器件,并对它们的性能进行了分析.","authors":[{"authorName":"张正选","id":"52df4262-ba6f-4b46-a40e-1acf7d9da110","originalAuthorName":"张正选"},{"authorName":"林成鲁","id":"985f3fdd-95d0-46b4-8f08-c853aea317c9","originalAuthorName":"林成鲁"}],"doi":"10.3969/j.issn.1007-4252.2003.02.024","fpage":"222","id":"5aab5ccb-8d08-4b9f-a5aa-4816cc855038","issue":"2","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"77b4c97e-cf58-4062-8936-c898ca771813","keyword":"纳米 <span style=\"color:red\">MOSFET</span>","originalKeyword":"纳米 MOSFET"},{"id":"aed28ebb-ac97-4af3-810c-9444bdc6fbd9","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"69456927-3329-49c7-9a27-9d095c10038a","keyword":"双栅 <span style=\"color:red\">MOSFET</span>","originalKeyword":"双栅 MOSFET"},{"id":"0c625703-8111-416b-9ac0-d2f82c8de3c2","keyword":"FinFET","originalKeyword":"FinFET"},{"id":"80660f86-d0d6-40f9-98a9-cb53bbcea3b1","keyword":"SiGe/Si","originalKeyword":"SiGe/Si"}],"language":"zh","publisherId":"gnclyqjxb200302024","title":"纳米 <span style=\"color:red\">MOSFET</span>/<span style=\"color:red\">SOI</span>器件新结构","volume":"9","year":"2003"},{"abstractinfo":"本文简单介绍了<span style=\"color:red\">SOI</span>和DSOI半导体器件制造技术,并提出了单管体硅,<span style=\"color:red\">SOI</span>及DSOI <span style=\"color:red\">MOSFET</span>的热阻模型.进而对体硅,<span style=\"color:red\">SOI</span> <span style=\"color:red\">MOSFET</span>器件,特别是DSOI <span style=\"color:red\">MOSFET</span>的热学特性进行数值计算,比较并分析了其数值计算结果.","authors":[{"authorName":"刘宏伟","id":"b527537c-8851-4bda-826e-e984118122f9","originalAuthorName":"刘宏伟"},{"authorName":"梁新刚","id":"c3cfefef-12f6-43bf-8fb9-d88ca51942a4","originalAuthorName":"梁新刚"}],"doi":"","fpage":"461","id":"5903eda1-b36d-475f-8a56-811d0826e49d","issue":"4","journal":{"abbrevTitle":"GCRWLXB","coverImgSrc":"journal/img/cover/GCRWLXB.jpg","id":"32","issnPpub":"0253-231X","publisherId":"GCRWLXB","title":"工程热物理学报   "},"keywords":[{"id":"c18fd9d0-4b63-4c36-96d9-5a1d15d97710","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"101b49ef-a22c-4668-9225-f9ad30391be6","keyword":"DSOI","originalKeyword":"DSOI"},{"id":"257026d8-115c-47aa-85fb-37c93f466b27","keyword":"<span style=\"color:red\">MOSFET</span>","originalKeyword":"MOSFET"},{"id":"0f632917-b01b-4b23-b030-2a590275122a","keyword":"热阻模型","originalKeyword":"热阻模型"}],"language":"zh","publisherId":"gcrwlxb200204018","title":"单管体硅,<span style=\"color:red\">SOI</span>及DSOI <span style=\"color:red\">MOSFET</span>热分析","volume":"23","year":"2002"},{"abstractinfo":"提出了一种简化的全耗尽<span style=\"color:red\">SOI</span> <span style=\"color:red\">MOSFET</span>阈值电压解析模型.该模型物理意义明确,形式简单,不需要非常复杂的计算.通过在不同条件下将本文的模拟结果和MEDICI模拟结果进行对比,验证了本模型的精确性.因此本模型对于器件物理特性的研究和工艺设计有很好的指导意义.","authors":[{"authorName":"李瑞贞","id":"eed79626-bf78-4694-81c1-a26dd0e69149","originalAuthorName":"李瑞贞"},{"authorName":"李多力","id":"bfe6e56b-fd59-4db9-a065-d994865e2519","originalAuthorName":"李多力"},{"authorName":"杜寰","id":"acba69fc-9fc0-4e32-b2df-77502d8ce53d","originalAuthorName":"杜寰"},{"authorName":"海潮和","id":"d4ddf27a-b961-4059-a1ad-a1432f414bd6","originalAuthorName":"海潮和"},{"authorName":"韩郑生","id":"f0e4bd26-6dfb-4c9d-84cd-e92dd99e8a5e","originalAuthorName":"韩郑生"}],"doi":"10.3969/j.issn.1007-4252.2007.01.015","fpage":"73","id":"42242502-eb21-438b-8c1c-d2fc24a8e0e4","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"e937bef3-433b-4e75-8b38-351f185fb5f9","keyword":"全耗尽<span style=\"color:red\">SOI</span> <span style=\"color:red\">MOSFET</span>","originalKeyword":"全耗尽SOI MOSFET"},{"id":"232a7cf0-4f3e-4562-8e9f-517a56e14b74","keyword":"阈值电压","originalKeyword":"阈值电压"},{"id":"20d98c91-19a1-47eb-a399-fbecf4ca2d06","keyword":"模型","originalKeyword":"模型"}],"language":"zh","publisherId":"gnclyqjxb200701015","title":"全耗尽<span style=\"color:red\">SOI</span> <span style=\"color:red\">MOSFET</span>阈值电压解析模型","volume":"13","year":"2007"},{"abstractinfo":"利用简化的半导体电学方程,数值模拟获得了各种电学参数的分布,并结合简化电阻模型,模拟了体硅、<span style=\"color:red\">SOI</span>及DSOI的<span style=\"color:red\">MOSFET</span>器件的温度场.结果表明<span style=\"color:red\">MOSFET</span>器件的沟道,特别是靠近漏的区域电场强度及电流密度等各项电、热特性参数在该区域变化剧烈,是最主要的热源区.","authors":[{"authorName":"梁新刚","id":"564f75e7-388c-4747-abcf-514e5f44e691","originalAuthorName":"梁新刚"},{"authorName":"刘宏伟","id":"8728c0e4-7492-4847-aaa5-289141cbd246","originalAuthorName":"刘宏伟"}],"doi":"","fpage":"487","id":"fee88281-c3b0-4a4c-95b6-c40a26d95950","issue":"3","journal":{"abbrevTitle":"GCRWLXB","coverImgSrc":"journal/img/cover/GCRWLXB.jpg","id":"32","issnPpub":"0253-231X","publisherId":"GCRWLXB","title":"工程热物理学报   "},"keywords":[{"id":"69f6f870-3cd7-4d66-8fce-21c360c60b43","keyword":"<span style=\"color:red\">MOSFET</span>","originalKeyword":"MOSFET"},{"id":"ff9a3de5-a22b-4dad-982a-419e067e4106","keyword":"热模拟","originalKeyword":"热模拟"},{"id":"5c845b6d-50f3-4329-8ecb-400d163af787","keyword":"电模拟","originalKeyword":"电模拟"}],"language":"zh","publisherId":"gcrwlxb200303037","title":"体硅、<span style=\"color:red\">SOI</span>及DSOI <span style=\"color:red\">MOSFET</span>器件级电、热分析","volume":"24","year":"2003"},{"abstractinfo":"通过实验研究了部分耗尽<span style=\"color:red\">SOI</span> NMOSFET总剂量辐射效应与辐射时的偏置状态的关系,实验结果表明TG(Transition Gate)是最恶劣的偏置状态.随后分别用MEDICI模拟软件和数值模型模拟掩埋氧化层中的电场强度与空穴俘获率.模拟结果合理地解释了实验结果,掩埋氧化层中的高电场和高空穴俘获率是TG为最恶劣偏置状态的主要原因.","authors":[{"authorName":"俞文杰","id":"066f42ba-dc49-43ec-a2f1-c2bf0cceabde","originalAuthorName":"俞文杰"},{"authorName":"张正选","id":"fed337db-64c3-4a54-bda0-368cdbfda2c5","originalAuthorName":"张正选"},{"authorName":"张恩霞","id":"501a503f-ef63-4ec2-b845-582dd34da97d","originalAuthorName":"张恩霞"},{"authorName":"钱聪","id":"9dbae423-1657-423a-b562-6de6e7a3b6e4","originalAuthorName":"钱聪"},{"authorName":"贺威","id":"73b236a8-708b-4fd9-b121-a474ca41992d","originalAuthorName":"贺威"},{"authorName":"田浩","id":"59157c65-4d00-4189-aacb-2b484747949a","originalAuthorName":"田浩"},{"authorName":"陈明","id":"2d8102e6-21ea-4aba-9f2e-933e199ef0f7","originalAuthorName":"陈明"},{"authorName":"王茹","id":"98ce7221-78d1-4261-84a2-9638e5b42c44","originalAuthorName":"王茹"}],"doi":"10.3969/j.issn.1007-4252.2007.06.008","fpage":"549","id":"09918a3f-775d-4c5f-8723-adf2b5642044","issue":"6","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"383b5020-85b7-4bcf-a7f5-3ec5eac65788","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"63b96ca2-1661-4493-b29f-4589e46651e6","keyword":"总剂量辐射","originalKeyword":"总剂量辐射"},{"id":"2cd42a4f-e27c-4848-8da2-c17a73e0f38f","keyword":"背沟道","originalKeyword":"背沟道"},{"id":"401c3a1b-56d3-42ac-b198-169d9159ffc5","keyword":"掩埋氧化层","originalKeyword":"掩埋氧化层"}],"language":"zh","publisherId":"gnclyqjxb200706008","title":"部分耗尽<span style=\"color:red\">SOI</span> <span style=\"color:red\">MOSFET</span>总剂量辐射效应的最恶劣偏置状态","volume":"13","year":"2007"},{"abstractinfo":"<span style=\"color:red\">SOI</span>(绝缘体上硅)器件在总剂量辐照下的主要性能退化是由于<span style=\"color:red\">SOI</span>器件的背栅阈值电压漂移引起的背沟道漏电.本文首先采用二维有限元方法,对辐射在<span style=\"color:red\">SOI</span>器件的埋氧层中的感生氧化物电荷进行模拟,然后分析此氧化物电荷对器件的外部电学特性的影响,建立了器件在最劣偏置下辐射引起的背栅<span style=\"color:red\">MOSFET</span>的阈值电压漂移模型,提取背栅<span style=\"color:red\">MOSFET</span>受辐射影响参数,以用于在<span style=\"color:red\">SOI</span>电路设计中准确的评估辐射对<span style=\"color:red\">SOI</span>电路的影响.模拟数据和试验数据具有很好的一致性.","authors":[{"authorName":"贺威","id":"fc86a3e4-b95a-4e18-b0a1-793b6d7d289c","originalAuthorName":"贺威"},{"authorName":"张正选","id":"a7d7d561-1cdf-4aaf-b782-cf0a0b4c9c79","originalAuthorName":"张正选"}],"doi":"10.3969/j.issn.1007-4252.2010.04.020","fpage":"403","id":"f7364e4a-e629-4510-b3df-8a6a1c084293","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"d201c62e-f27a-4f43-af19-a5107a5a7956","keyword":"埋氧层","originalKeyword":"埋氧层"},{"id":"6d069187-0de7-45e7-9d72-0a8d971806cc","keyword":"绝缘体上硅","originalKeyword":"绝缘体上硅"},{"id":"9905223f-c734-4797-8d37-c46f8cc4b8e7","keyword":"总剂量辐射效应","originalKeyword":"总剂量辐射效应"},{"id":"b78362aa-76e3-4b70-a035-89b8bca3e104","keyword":"模型","originalKeyword":"模型"},{"id":"e66f3f16-7dcd-4f6e-aa9d-4a3556fc82f4","keyword":"背栅","originalKeyword":"背栅"}],"language":"zh","publisherId":"gnclyqjxb201004020","title":"总剂量辐射下的NMOS/<span style=\"color:red\">SOI</span>器件背栅阈值电压漂移模型","volume":"16","year":"2010"},{"abstractinfo":"介绍了一种表征<span style=\"color:red\">SOI</span>材料电学性质的手段,并对三种不同顶层硅厚度的SIMOX材料进行测试、提取参数,分析材料制备工艺对性能产生的影响.研究结果表明,标准SIMOX材料通过顶层硅膜氧化、腐蚀等减薄工艺制得的顶层硅厚度小于1200nm的超薄SIMOX材料,其顶层硅与BOX层界面有更多的缺陷,会影响到在顶层硅膜上制得的器件的性能,引起NMOSFET的阈值电压升高、载流子迁移率降低.Pseudo-<span style=\"color:red\">MOSFET</span>方法能够在晶圆水平上快捷有效地表征超薄SIMOX材料的电学性质.","authors":[{"authorName":"张帅","id":"5c62a910-68e3-421c-b0d7-e49f95f9701b","originalAuthorName":"张帅"},{"authorName":"张正选","id":"ab243cfa-5061-4140-acb8-bbdb52b418d5","originalAuthorName":"张正选"},{"authorName":"毕大炜","id":"73316d12-0933-4551-9cfe-674f84c2f413","originalAuthorName":"毕大炜"},{"authorName":"陈明","id":"3eaea8f1-ad73-4af2-a70a-0405e8f68e1d","originalAuthorName":"陈明"}],"doi":"10.3969/j.issn.1007-4252.2010.01.009","fpage":"47","id":"1a216e97-42e7-4874-b677-c233381982fb","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"f9883c72-8c2f-4906-bc55-ccb3f5aae048","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"0d835b5e-1dde-452a-a237-eb84e5a15a14","keyword":"SIMOX","originalKeyword":"SIMOX"},{"id":"e470253a-49b2-4c37-8691-758ae055e285","keyword":"Pseudo-<span style=\"color:red\">MOSFET</span>","originalKeyword":"Pseudo-MOSFET"},{"id":"5a7904d4-b2f7-4684-8a61-208b05bc0325","keyword":"隐埋氧化层","originalKeyword":"隐埋氧化层"}],"language":"zh","publisherId":"gnclyqjxb201001009","title":"超薄SIMOX材料的Pseudo-<span style=\"color:red\">MOSFET</span>电学表征","volume":"16","year":"2010"},{"abstractinfo":"为了缩短<span style=\"color:red\">SOI</span>材料的改性研究周期,利用pseudo-MOS方法研究了SIMOX <span style=\"color:red\">SOI</span>材料的总剂量辐照效应.试验采用硅注入绝缘埋层后退火得到改性的SIMOX <span style=\"color:red\">SOI</span>材料,通过对比改性前后样品在辐照前后的pseudo-<span style=\"color:red\">MOSFET</span> ID-VG特性曲线,分析改性工艺的影响.研究结果表明,合适的改性工艺能有效提高材料抗总剂量辐照效应的能力,pseudo-MOS方法在大大缩短<span style=\"color:red\">SOI</span>材料改性周期的基础上,能准确、快捷地对材料的总剂量辐照效应进行表征.","authors":[{"authorName":"杨慧","id":"59a8c0fd-efe0-406a-9fc5-26a16c7d76a5","originalAuthorName":"杨慧"},{"authorName":"张正选","id":"544ff99a-9a9f-470d-89bd-c7cd2af48c7e","originalAuthorName":"张正选"},{"authorName":"张恩霞","id":"7aaa9b02-f682-4558-ba68-bc8bacdfc2b8","originalAuthorName":"张恩霞"}],"doi":"10.3969/j.issn.1007-4252.2007.03.008","fpage":"233","id":"e608931b-ddf0-4fed-95b1-e17ec611ad9b","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"e00f140a-f1d7-44e6-9644-b63c00b6125d","keyword":"SIMOX","originalKeyword":"SIMOX"},{"id":"8569fbef-2740-4d7d-baff-d208793a7d5f","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"266a66a7-6b4f-42ef-afba-44fbb9c1d268","keyword":"总剂量辐照效应","originalKeyword":"总剂量辐照效应"},{"id":"e1bf51b5-09ae-421b-b9e5-dfcbe509ab0b","keyword":"Pseudo-MOS","originalKeyword":"Pseudo-MOS"}],"language":"zh","publisherId":"gnclyqjxb200703008","title":"Pseudo-MOS方法表征SIMOX <span style=\"color:red\">SOI</span>材料总剂量辐照效应","volume":"13","year":"2007"},{"abstractinfo":"","authors":[{"authorName":"梅博","id":"e2981ec1-23ad-4786-a822-a91635929171","originalAuthorName":"梅博"},{"authorName":"毕津顺","id":"cc60380a-69b2-4982-a26b-f44ac74c996d","originalAuthorName":"毕津顺"},{"authorName":"李多力","id":"649bdb1f-47e0-44b0-a359-d8016bef04b2","originalAuthorName":"李多力"},{"authorName":"刘思南","id":"0be0f36d-7901-4d7f-bd23-3a1baf035038","originalAuthorName":"刘思南"},{"authorName":"韩郑生","id":"904d9566-3e2c-4811-b8fa-f786923d6286","originalAuthorName":"韩郑生"}],"doi":"10.1088/1674-4926/33/2/024002","fpage":"36","id":"e58686f3-b61e-46a9-b9d8-17637209d411","issue":"2","journal":{"abbrevTitle":"BDTXBYWB","coverImgSrc":"journal/img/cover/BDTXBEN.jpg","id":"2","issnPpub":"1674-4926","publisherId":"BDTXBYWB","title":"半导体学报（英文版）"},"keywords":[{"id":"96da3846-01ca-49ec-9e4c-cf5bf63b8dad","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"bdtxb201202007","title":"Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated <span style=\"color:red\">SOI</span> <span style=\"color:red\">MOSFET</span>","volume":"33","year":"2012"}],"totalpage":11,"totalrecord":107}