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Zhang Xu , Rao Feng , Liu Bo , Peng Cheng , Zhou Xilin , Yao Dongning , Guo Xiaohui , Song Sannian , Wang Liangyong , Cheng Yan , Wu Liangcai , Song Zhitang , Feng Songlin

半导体学报（英文版） doi:10.1088/1674-4926/33/10/102003

关键词:

Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications

Applied Physics a-Materials Science & Processing

Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.

关键词: hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2