LI Hiaogang
,
MENG Qinghai
,
CHEN Hua
,
CHEN Jinwei
,
YAO Zhiming
,
KE Wei(State Key Laboratory of Corrosion Science
,
Institute of Corrosion and Protection of Metals
,
Chinese Academy of Sciences
,
Shenyang 110015
,
China)(Fushun Petroleum Institute
,
Fushun 113001
,
China)
金属学报(英文版)
Hydrogen attack occurred in low carbon steel and steel 25CrMo which had been exposed in hydrogen under 18MPa at 450 and 500℃ for 240,480 and 720 h.The methane bubbles and microcracks grow along grain boundaries.The degree of hydrogen attack increases with increasing exposure time and temperature.Magnetic acoustic emission(MAE) was used to detect the degree of hydrogen attack.The results show that the characteristics of MAE for samples of low carbon steel and steel 15CrMo with hydrogen attack have changed obviously comparing to the samples without hydrogen attack,and the MAE signals was sensitive to the degree of hydrogen attack at the last stage of hydrogen attack.The magnetic detection way,as a new method of nonrestrictive testing of hydrogen attack,can be used to detect the hydrogen attack in practice.
关键词:
:magnetic acoustic emission
,
null
,
null
,
null
Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
