材料期刊网

Performance evaluation of BPM system in SSRF using PCA method

CHEN Zhi-Chu , LENG Yong-Bin , YAN Ying-Bing , YUAN Ren-Xian , LAI Long-Wei

中国物理C doi:10.1088/1674-1137/38/7/077004

关键词:

Experimental study using Touschek lifetime as machine status flag in SSRF

CHEN Zhi-Chu , LENG Yong-Bin , YUAN Ren-Xian , YAN Ying-Bing , YU Lu-Yang

中国物理C doi:10.1088/1674-1137/38/7/077005

关键词:

Cu-Zr/ZrN薄膜体系的电阻率和纳米压入研究

白宣羽 , 汪渊 , 徐可为

稀有金属材料与工程

采用磁控溅射方法在Si(111)基片上沉积Cu-Zr/ZrN薄膜体系作为扩散阻挡层.通过比较Cu-Zr/ZrN薄膜体系和三元非晶(Mo,Ta,W)-Si-N的电阻率,同时比较Cu-Zr/ZrN薄膜体系和Ta,YaN的硬度,说明作为扩散阻挡层的材料的选取,应从整体性能上考虑,而不能仅仅考虑热稳定性等单一指标.

关键词: 非晶 , 电阻率 , 纳米压入 , 硬度

Studies of the g factors and the local structure for Ni3+in LaAl0.9Ni0.1O3, La0.75Y0.25Al0.99Ni0.01O3 and YAl0.9Ni0.1O3

Radiation Effects and Defects in Solids

The electron paramagnetic resonance g factors and the local structure for Ni3+ in LaAl0.9Ni0.1O3 (LAN), La0.75Y0.25Al0.99Ni0.01O3 (LYAN) and YAl0.9Ni0.1O3 (YAN) are theoretically studied from the perturbation formulas of the g factors for a 3d7 ion of low spin (S = 1/2) in tetragonally elongated octahedra. In these formulas, the contributions to the g factors from the tetragonal distortion, characterized by the tetragonal field parameters Ds and Dt are taken into account. According to the calculations, the ligand octahedra around Ni3+ are suggested to suffer 2% relative elongation along the [001] (or C4) axis due to the Jahn-Teller effect.

关键词: defect structures;electron paramagnetic resonance;crystal-fields and;spin Hamiltonians;Ni3+;LaAlO3;LaYAlO3;YAlO3;atomic screening constants;optical-spectra;paramagnetic-resonance;superconducting tapes;lattice-distortions;superposition model;scf;functions;cr3+ ions;crystals;epr

非微扰QCD和核遮蔽效应对K因子的影响

智海素 , 侯召宇

原子核物理评论 doi:10.3969/j.issn.1007-4627.2006.01.002

考虑非微扰量子色动力学物理真空夸克凝聚效应,计算了碳核与碳核在质心系能量分别为630和200 GeV时碰撞Drell-Yan过程的K因子,以及加入核遮蔽因子后非微扰效应对K因子的影响,并把计算结果与没有考虑夸克凝聚非微扰效应的K值进行了对比.结果表明,非微扰效应和核遮蔽效应对K因子影响很小.

关键词: K因子 , Drell-Yan过程 , 夸克凝聚 , 非微扰量子色动力学 , 核遮蔽效应

高PPI ADS产品白Mura不良产生原理及改善研究

桑胜光 , 车晓盼 , 王嘉黎 , 郭红光 , 井杨坤 , 李泽 , 游伟

液晶与显示 doi:10.3788/YJYXS20163105.0435

现有传统TFT-LCD生产工艺中,Rubbing工艺在生产高PPI ADS产品的过程中,在改善Rubbing Mura不良时会使用H Cloth,但使用H Cloth Glass在经过Rubbing后ODF Rubbing Cleaner清洗时会出现白Mura不良.经过对白Mura不良Panel的微观解析,并结合H Cloth性质分析出白Mura不良是由于H Cloth自身的聚醋酸脂颗粒经过Rub-bing Cleaner聚集造成的.从Rubbing Cleaner清洗时改变Glass表面性质(醇类可以有效改变界面性质)入手,通过使用IPA对Glass进行清洗以改变聚醋酸脂疏水性,使得聚醋酸脂颗粒更易被Rubbing Cleaner清洗掉来改善白Mura不良,并结合生产实际定期对IPA进行更换以保持IPA浓度处于一个稳定的区间,使得高PPI ADS产品白Mura不良发生率由改善前的3.42％降低至改善后的0.11％,白Mura不良得到非常有效的改善.

关键词: 高PPI , 白Mura不良 , 聚醋酸脂 , 疏水性