Xin Yang
材料科学技术（英文）
Oxidation protective MoSi2-Mo5Si3/SiC multi-coatings for carbon/carbon composites were prepared by chemical vapor reaction and slurry-sintering method. The influence of preparation technology on the structure and phase composition of the coating was investigated by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analyses, and then their relationship was discussed. The results indicate that the Si/Mo ratio of the slurry and sintering processing were two main factors that significantly affected the structure and phase composition of the multi-coating. Appropriate sintering process and relatively high Si/Mo ratio were essential for preparing the multi-coating with dense structure and favorable phase composition. After being sintered at 1723 K for 2 h and with the Si/Mo ratio of the slurry being 4.5 (weight ratio), a dense structure accompanied by favorable phase composition of the coating can be obtained. When heat treated at 2373 K for 1 h, this coating became more compact and continuous. Oxidation tests (performed at 1623 and 1823 K) demonstrated that both of these two obtained multi-coatings exhibited better anti-oxidation property than single layer SiC coating.
关键词:
Carbon/carbon composites
,
null
,
null
常永勤
,
介万奇
,
郭喜平
,
陈福义
,
安卫军
功能材料
研究了ACRT-B法生长的Mn0.1Cd0.9In2Te4晶体中界面的形状和各组元沿轴向的分布规律及其分凝因数.发现结晶界面为椭球形;采用理想配比生长MnxCd1-xIn2Te4晶体,其4种组元并不按(Mn,Cd):In:Te=1:2:4比例结晶,而是要重新分布;通过数学方法处理实验数据得到Mn,Cd和In的分凝因数在α相区分别为1.286、1.9257和0.7294,在β相区则分别为1.12、1.055和0.985.
关键词:
ACRT-B法
,
MnxCd1-x In2Te4
,
界面
,
分凝因数
常永勤
,
安卫军
,
郭喜平
,
介万奇
无机材料学报
采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物MnxCd1-xIn2Te4晶体.研究了三根晶体中相的形貌、结构、成分和Mn0.1Cd0.9In2Te4晶体中各组元沿轴向和径向的成分分布.晶体生长初始端的组织为α+β+β1,随着生长的进行,形成β相的单相区.在晶锭末端,形成In2Te3类面心立方结构化合物.组分x增大后,MnxCd1-xIn2Te4晶体的吸收边向短波方向移动,禁带宽度则线性增大.磁化率测量结果表明:晶体在高温区的x-1-T曲线服从居里-外斯定律,在低温区(<50K)则表现出顺磁增强现象.
关键词:
MnxCd1-xIn2Te4
,
compositional distribution
,
infrared transmission spectra
,
mag- netic susceptibility
常永勤
,
安卫军
,
郭喜平
,
介万奇
无机材料学报
doi:10.3321/j.issn:1000-324X.2003.02.004
采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物MnxCd1-xIn2Te4晶体.研究了三根晶体中相的形貌、结构、成分和Mno.1Cd0.9In2Te4晶体中各组元沿轴向和径向的成分分布.晶体生长初始端的组织为α+β+β1,随着生长的进行,形成β相的单相区.在晶锭末端,形成In2Te3类面心立方结构化合物.组分x增大后,MnxCd1-xIn2Te4晶体的吸收边向短波方向移动,禁带宽度则线性增大.磁化率测量结果表明:晶体在高温区的x-1-T曲线服从居里一外斯定律,在低温区(＜50K)则表现出顺磁增强现象.
关键词:
MnxCd1-xIn2Te4
,
成分偏析
,
红外透射光谱
,
磁化率
常永勤
,
安卫军
,
郭喜平
,
介万奇
功能材料
采用Bridgman法生长四元稀磁化合物半导体Mn0.22Cd0.78In2Te4晶体.当晶体生长到预定长度时,淬火得到固液界面.采用光学显微镜、扫描电镜、X射线衍射仪、ISIS能谱仪以及Leica定量金相分析仪研究了晶体中出现的界面形态、相的形貌和数量以及沿生长方向的相析出规律,并进行了相成分分析.研究发现,淬火得到的Mn0.22 Cd0.78In2Te4晶体中存在两个界面,其中一个为固液相变界面,另一个为由α+β两相区发展到单相β区时的转变界面,二者相对于生长初始端均为凹形;α+β两相区中,β相以条状、花状和近似圆片状形式存在,其中条状β相多分布在晶界处;越接近生长初始端,花状和近似圆片状β相越小,条状β相越细,它们的含量越少;X射线衍射图谱表明,β相为黄铜矿结构,α相为面心立方结构.
关键词:
MnxCd1-xIn2Te4
,
相变界面
,
β相
,
X射线衍射图谱
Farook ADAM*, Kei Lin SEK
催化学报
doi:10.1016/S1872-2067(11)60453-1
Indium incorporated silica samples with different indium contents were synthesized using a template free sol-gel method. The silica used was extracted from rice husk (RH) and the resulting catalyst was labeled as RH-xIn (x=5%,10%,15%, and 20%). From the N2 adsorption analysis the presence of type IV isotherm in RH-blank and RH-xIn indicated the mesoporous nature of the catalysts. In the XRD pattern, a broad band at ca.2θ=25° was observed for all the catalysts which showed them to be amorphous. TEM micrographs revealed that the material is composed of nanoparticles. Friedel-Craft benzoylation of toluene was carried out using the RH-xIn catalyst. The optimum conditions for the benzoylation of toluene were determined and at 373 K,100%conversion and 89%selectivity for the para-product (i.e.4-methylbenzophenone) were obtained.
关键词:
rice husk
,
sol-gel
,
indium
,
Friedel-Craft benzoylation
,
Toluene
Canying CAI
,
Qibin YANG
,
Hongrong LIU
材料科学技术（英文）
Assuming that the wave function , the Schrodinger equation can be written as . Neglecting the last two terms, an analytical expression of electron dynamical diffraction was derived by Qibin YANG et al. In this paper, the analytical expression is modified by further considering the second-order differential term . When the accelerating voltage is not very high, or the sample is not very thin, the reciprocal vector ɡ is large, the modification of the second-order differential is necessary; otherwise it can be neglected.
关键词:
Electron dynamical diffraction
,
null
金属学报
Volu扣ne 27SeriesB1991AUTHOR INDEX CCAO Guanghan(曹光旱)············……6一B科6CAo weijie(曹卫恋)..················……5一B32oCAO Yilin(曹益林)··················……6一B443CHANG Xin(常听)···············……1一B48CHE Guang邻n(车广灿)·············一6一B科0CHEN Erbao(陈二保)···············……6一B410CHEN Jia....
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